N1407 Search Results
N1407 Price and Stock
Hirose Electric Co Ltd KN14(0.7)-2P-2-V(800)CONN PLUG FPC 0.7MM |
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KN14(0.7)-2P-2-V(800) | Cut Tape | 6,960 | 1 |
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Toshiba America Electronic Components RN1407,LXHFTRANS PREBIAS NPN 50V SMINI |
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RN1407,LXHF | Cut Tape | 5,652 | 1 |
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RN1407,LXHF | Reel | 36 Weeks | 3,000 |
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RN1407,LXHF | 5,990 |
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RN1407,LXHF | Reel | 3,000 |
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Toshiba America Electronic Components RN1407,LFTRANS PREBIAS NPN 50V SMINI |
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RN1407,LF | Cut Tape | 551 | 1 |
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RN1407,LF | 2,538 |
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LEDIL FN14074_STELLA-HBLENS CLEAR 65-84DEG WIDE SCREW |
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FN14074_STELLA-HB | Tray | 98 | 1 |
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FN14074_STELLA-HB | 431 |
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FN14074_STELLA-HB | 137 | 1 |
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FN14074_STELLA-HB | 7 Weeks | 135 |
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FN14074_STELLA-HB | 1,320 | 7 Weeks | 135 |
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FN14074_STELLA-HB | 9 | 1 |
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Honeywell Sensing and Control SCN-1407SCSENSOR PROX ULTRASONIC 15-30VDC |
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SCN-1407SC | Bulk |
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SCN-1407SC | Bulk | 1 | 1 |
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SCN-1407SC |
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N1407 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SANGDEST MICROELECTRONICS ST1550AX Green Products Technical Data Data Sheet N1407, Rev. - ST1550AX SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • |
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ST1550AX N1407, ST1550AX | |
A0639-3
Abstract: SSFP package IT11215 A0639
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3HP04SS ENA0639 145mm80mm1 A0639-4/4 A0639-3 SSFP package IT11215 A0639 | |
EC4305CContextual Info: EC4305C Ordering number : ENA0874 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET EC4305C General-Purpose Switching Device Applications Features • • 4V drive. Halogen free compliance UL94 HB . Specifications Absolute Maximum Ratings at Ta=25°C |
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EC4305C ENA0874 A0874-4/4 EC4305C | |
Contextual Info: SCH2309 Ordering number : ENA0876 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET SCH2309 General-Purpose Switching Device Applications Features • • 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting. |
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SCH2309 ENA0876 900mm20 A0876-4/4 | |
MCH6321Contextual Info: MCH6321 Ordering number : ENA0963 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage |
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MCH6321 ENA0963 1200mm20 A0963-4/4 MCH6321 | |
Contextual Info: Ordering number : ENA0963B MCH6321 P-Channel Power MOSFET –20V, –4A, 83mΩ, Single MCPH6 http://onsemi.com Features • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage |
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ENA0963B MCH6321 1200mm2Ã A0963-5/5 | |
diode sy 710
Abstract: VEC2813 N1407
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VEC2813 ENA0384B A0384-6/6 diode sy 710 VEC2813 N1407 | |
it13012
Abstract: MCH3377 IT13016
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MCH3377 900mm2 --10V IT13014 900mm2 IT13017 A0957-3/4 it13012 MCH3377 IT13016 | |
VEC2813Contextual Info: VEC2813 注文コード No. N A 0 3 8 4 B 三洋半導体データシート 半導体データシート No.NA0384A をさしかえてください。 VEC2813 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード |
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VEC2813 NA0384A 900mm2 N0106 TC-00000299 52506PE TB-000002333 A0384-1/6 N1407 VEC2813 | |
Contextual Info: ECH8654 Ordering number : ENA0981A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications |
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ECH8654 ENA0981A 900mm2Ã A0981-7/7 | |
diode sy 710
Abstract: VEC2814
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VEC2814 ENA0390B A0390-6/6 diode sy 710 VEC2814 | |
Contextual Info: Ordering number : EN6804A LA75503V Monolithic Linear IC VIF/SIF Signal Processing IC for PAL TV/VCR Adjustment Free http://onsemi.com Overview The LA75503V is an adjustment free VIF/SIF signal processing IC for PAL TV/VCR. It supports 38MHz, 38.9MHz, and 39.5MHz as the IF frequencies, as well as PAL sound multi-system M/N, B/G, I, D/K , and contains an on-chip |
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EN6804A LA75503V LA75503V 38MHz, | |
3HP04CHContextual Info: 3HP04CH Ordering number : ENA0873 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04CH General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage |
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3HP04CH ENA0873 900mm20 A0873-4/4 3HP04CH | |
2SC144
Abstract: 2SD466 2sc5266
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T258-OMI FAX06 2SC144 2SD466 2sc5266 | |
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Contextual Info: Ordering number : ENA0957A MCH3377 P-Channel Power MOSFET http://onsemi.com –20V, –3A, 83mΩ, Single MCPH3 Features • • Ultrahigh-spees switching. Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA0957A MCH3377 PW10s, 900mm2 A0957-7/7 | |
Contextual Info: Ordering number : ENA0981B ECH8654 P-Channel Power MOSFET http://onsemi.com –20V, –5A, 38mΩ, Dual ECH8 Features • • Low ON-resistance Halogen free compliance • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C |
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ENA0981B ECH8654 PW10s, 900mm2 A0981-7/7 | |
ECH8301
Abstract: FTD2017 FSS237 SANYO Replacement list ECH8401 ECH8631 ECH8652 ECH8607 FSS131 FSS138
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FTD2011 FTD2011A FSS238 FSS804 FTD2013 ECH8607 FSS239 CPH6411 FTD2017 FTD2017R ECH8301 FTD2017 FSS237 SANYO Replacement list ECH8401 ECH8631 ECH8652 ECH8607 FSS131 FSS138 | |
IT11215Contextual Info: SCH2309 注文コード No. N A 0 8 7 6 三洋半導体データシート N SCH2309 P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス 特長 ・4V 駆動。 ・MOS 型電界効果トランジスタを 1 パッケージに 2 素子内蔵した複合タイプであり高密度実装が可能である。 |
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SCH2309 900mm2 100mA 100mA, IT11217 900mm2 IT12739 --800mA --10V IT11215 | |
marking QJ
Abstract: MCH3377
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MCH3377 ENA0957 900mm20 A0957-4/4 marking QJ MCH3377 | |
Contextual Info: 3HP04S Ordering number : ENA0877 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3HP04S General-Purpose Switching Device Applications Features • 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage |
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3HP04S ENA0877 A0877-4/4 | |
Transistors marking WZContextual Info: ECH8654 Ordering number : ENA0981 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C |
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ECH8654 ENA0981 900mm20 A0981-4/4 Transistors marking WZ | |
Contextual Info: MCH6321 Ordering number : ENA0963 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET MCH6321 General-Purpose Switching Device Applications Features • 1.8V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage |
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ENA0963 MCH6321 1200mm20 A0963-4/4 IT13030 | |
Contextual Info: ECH8654 Ordering number : ENA0981 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET ECH8654 General-Purpose Switching Device Applications Features • • • Low ON-resistance. 1.8V drive. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C |
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ECH8654 ENA0981 900mm2â A0981-4/4 | |
Contextual Info: Ordering number : ENA0963A MCH6321 P-Channel Power MOSFET http://onsemi.com –20V, –4A, 83mΩ, Single MCPH6 Features • • 1.8V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions |
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ENA0963A MCH6321 PW10s, 1200mm2 A0963-7/7 |