IT010 Search Results

power control 62613

Abstract: TA75107 1SV315 ENN6261
Contextual Info: Ordering number:ENN6261 Silicon Epitaxial Pin Diode 1SV315 Variabe resistance Attenuator Use Package Dimensions unit:mm 1246A [1SV315] 0.425 • Ultrasmall-sized package facilitates high-density mounting and permits 1SV315-applied equipment to be made smaller.

it-007

Abstract: CPH5605 IT01080
Contextual Info: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON

k2624

Abstract: 2SK2624FG how to test k2624 test mosfet k2624 A1321 application note mosfet k2624
Contextual Info: 2SK2624FG Ordering number : ENA1321 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2624FG General-Purpose Switching Device Applications Features • • • Low ON-reisitance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

k2624

Abstract: test mosfet k2624 how to test k2624 mosfet k2624 2sk2624fs A1320
Contextual Info: 2SK2624FS Ordering number : ENA1320 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2624FS General-Purpose Switching Device Applications Features • • • Low ON-reisitance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

Contextual Info: Ordering number:ENN*6451 N-Channel and P-Channel Silicon MOSFETs CPH5606 Ultrahigh-Speed Switching Applications Preliminary Package Dimensions unit:mm 2168 [CPH5606] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5606 incorporates on N-channel MOSFET and a P-channel MOSFET that feature low ON

Contextual Info: Ordering number:ENN6368 N-Channel Silicon MOSFET CPH5602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5602] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

2SK3285

Abstract: TA2280
Contextual Info: Ordering number:ENN6358 N-Channel Silicon MOSFET 2SK3285 DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2093A [2SK3285] 4.5 1.3 1.6 8.8 11.5 0.9 10.2 11.0 20.9 1.2 9.4 0.8 0.4 2 1 : Gate 2 : Drain 3 : Source

2SC5551

Abstract: TA-2665
Contextual Info: Ordering number:ENN6328 NPN Epitaxial Planar Silicon Transistor 2SC5551 High-Frequency Medium-Output Amplifier Applications Features Package Dimensions • High fT : fT=3.5GHz typ . · Large current : (IC=300mA). · Large allowable collector dissipation (1.3W max).

IT01101

Abstract: CPH5604
Contextual Info: Ordering number:ENN6440 N-Channel Silicon MOSFET CPH5604 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5604] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a

TA-2415

Abstract: 1SV294
Contextual Info: 注文コード No. N 5 1 3 6 A 1SV294 No. N 5 1 3 6 A 60500 半導体ニューズ No.5136 とさしかえてください。 1SV294 特長 シリコンエピタキシァル PIN 形ダイオード 可変抵抗減衰器用 ・小型外形のため高密度実装および小形設計が可能である。

FTS2005

Abstract: S2005
Contextual Info: Ordering number:ENN6347 N-Channel Silicon MOSFET FTS2005 Liquid Crystal Display Backlight Drive Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Mounting height 1.1mm. unit:mm 2166 [FTS2005] 0.65 0.425 5 4.5 6.4

CPH5602

Abstract: IT01081
Contextual Info: Ordering number:ENN6368 N-Channel Silicon MOSFET CPH5602 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5602] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

CPH5605

Abstract: M2168
Contextual Info: 注文コード No. N 6 4 4 1 CPH5605 三洋半導体データシート N CPH5605 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを

Contextual Info: Ordering number:ENN5404B N-Channel Silicon MOSFET 2SK2624LS Ultrahigh-Speed Switching Applications Features Package Dimensions •Low ON-resistance. unitimm ‘ Low Qg- 2078B Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Unit Ratings Conditions

CPH5608

Contextual Info: Ordering number:ENN6442A N-Channel Silicon MOSFET CPH5608 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5608] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

D2695

Abstract: 1SV298 MARKING QV
Contextual Info: Ordering number : ENN5224B 1SV298 Silicon Epitaxial PIN Diode 1SV298 π Type Attenuator Applications Features • Package Dimensions Composite type with 3 diodes contained in the CP package currently in use, improving the mounting efficiency greatly. Small interterminal capacitance C=0.23pF typ .

triac mw 137 600G

Abstract: Transistor s106d1 transistor c103m TYN604 scr pin diagram Triac AC INRUSH CURRENT LIMITER opto diac TYN604 scr datasheet triac bta40-700b firing circuit alternistor "application note" UJT 2N2646
Contextual Info: Thyristor Product Catalog Littelfuse, Inc. 1800 Hurd Drive Irving, Texas 75038 United States of America Phone: +1 972-580-7777 Fax: +1 972-550-1309 Website: http://www.littelfuse.com E-mail: techsalespower@littelfuse.com 2004 Littelfuse, Inc. Thyristor Product Catalog

2SC5551

Contextual Info: 2SC5551A Ordering number : ENA1118 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5551A High-Frequency Medium-Output Amplifier Applications Features • • • High fT : fT=3.5GHz typ . Large current : (IC=300mA). Large allowable collector dissipation (1.3W max).

Contextual Info: Ordering number : ENA1118A 2SC5551A RF Transistor 30V, 300mA, fT=3.5GHz, NPN Single PCP http://onsemi.com Features High fT : fT=3.5GHz typ Large current : (IC=300mA) Large allowable collector dissipation (1.3W max) • • • Specifications Absolute Maximum Ratings at Ta=25°C

IT01062

Abstract: 2SK2977LS 251m10 ta2275
Contextual Info: Ordering number:ENN6423 N-Channel Silicon MOSFET 2SK2977LS DC/DC Converter Applications Features Package Dimensions • Low ON resistance. · 4V drive. unit:mm 2078B [2SK2977LS] 4.5 2.8 0.6 16.1 16.0 3.5 3.2 7.2 10.0 1.2 14.0 3.6 0.9 1.2 0.7 0.75 2 1 : Gate

CPH5608

Contextual Info: Ordering number:ENN6442A N-Channel Silicon MOSFET CPH5608 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5608] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a

CPH5606

Abstract: M2168
Contextual Info: 注文コード No. N※6 4 5 1 CPH5606 No. ※N 6 4 5 1 N2499 CPH5606 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを

j485

Abstract: 2SJ485 2SJ48
Contextual Info: Ordering number:ENN6434 P-Channel Silicon MOSFET 2SJ485 Ultrahigh-Speed Switching Applications Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SJ485] 2.3 5.5 1.5 6.5 5.0 4 0.5 7.0 Features 1.2 7.5 0.8 1.6