ISOWATT221 Search Results

Contextual Info: 712T237 D04LEGÔ 7bb •SGTH / = 7 SGS-THOMSON Ä 7# S T P 3 N 100X 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100XI . . ■ . . ■ V dss RDS on Id 1000 V <61! 1.6 A AVALANCHE RUGGED TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: 7^2^537 OOMblfl? IDI •S6TH SGS-THOMSON S T P 3 N80XI id U O T * ! N - CHANNEL ENHANC EM ENT MODE POW ER MOS TRAN SISTO R TYPE STP3N80XI ■ . ■ ■ . ■ ■ V dss RDS on Id 800 V < 4 .5 n 1 .7 A TYPICAL RDS(on) = 3.9 Q AVALANCHE RUGGED TECHNOLOGY

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

STP3N60

Abstract: stp3n60xi ISOWATT221
Contextual Info: SCS-THOMSON STP3N60XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE Voss S TP3N 60XI ! 600 V R D S o n 2.5 n ! Id r 2.4 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED • REPETITIVE AVALANCHE DATA AT 100°C . APPLICATION ORIENTED CHARACTERIZATION

ISOWATT221

Abstract: stp8n50xi
Contextual Info: SGS-THOMSON STP8N50XI [M S^ OiLiCT[RMD(gS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STP8N 50XI 500 V I R d s ( o ii 0 .8 5 I LI Id 4 .5 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: r z T SCS-THOMSON ^ 7 # raaeB iiLi SîB©oase8 SGSF313 SGSF313PI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS , HIGH VOLTAGE CAPABILITY (450V V c e o * VERY HIGH SWITCHING SPEED: tf = 35ns TYPICAL AT le = 2.5A, IB1 = 0.5A, V b e o H = -5V . LOW SATURATION VOLTAGE

IRFP450FI

Abstract: IRF540FI ISOWATT221 Tech MOS Technology STLT20FI
Contextual Info: GENERAL INFORMATION The Power M OS devices presented in this databook are made using well proven SGS-THOMSON tech­ nology. SGS-THO MSO N Power MOS technology stands, with equal stature, firmly alongside the com pany's wide range of devices in Power BIPOLAR and

ISOWATT221

Abstract: stp4n80xi stp4n80
Contextual Info: SGS-THOMSON STP4N80XI 1ILD N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RDS on V dss STP4N 80XI 8 00 V ¡ i 3 .5 £2 Id 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW INPUT CAPACITANCE . LOW GATE CHARGE

ISOWATT221

Abstract: stp3n80xi
Contextual Info: £ fj SGS-THOMSON STP3N80XI i!Ll ir^©D N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss S TP3N 80XI 4.5 a 800 V 1 .7 A . . . . . • AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW INPUT CAPACITANCE

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

FREDFETs

Contextual Info: COMMITMENT FOR INNOVATION Following its long tradition for innovative power devices, SGS-THOMSON has continued to intro­ duce new POWER MOS technologies and pro­ ducts. Diffusion furnaces This has been possible due to the com pany’s lead­ ing and well established expertise already acquired

Contextual Info: M 7^5^537 r = 7 Ä T# Otmbggg 03k • S 6 T H _ S G S -T H O M S O N G * [fä m [I g * S S T P 4 N 8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N80XI . . ■ . . . . Voss R D S (on Id 800 V < 3.5 Q 2 A TYPICAL R D S (o n ) = 2.9 Q

GC2269

Contextual Info: SGS-THOMSON STP3N50XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP3N 50XI . . • . . V dss RoS on Id 500 V 4 il 1,7 A AVALANCHE RUG G EDN ESS TECHNOLO GY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C APPLICATION O RIENTED CHARACTERIZATION