STP4N80XI Search Results

ISOWATT221

Abstract: stp4n80xi stp4n80
Contextual Info: SGS-THOMSON STP4N80XI 1ILD N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE RDS on V dss STP4N 80XI 8 00 V ¡ i 3 .5 £2 Id 2 A . AVALANCHE RUGGEDNESS TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW INPUT CAPACITANCE . LOW GATE CHARGE

Contextual Info: M 7^5^537 r = 7 Ä T# Otmbggg 03k • S 6 T H _ S G S -T H O M S O N G * [fä m [I g * S S T P 4 N 8 0 XI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP4N80XI . . ■ . . . . Voss R D S (on Id 800 V < 3.5 Q 2 A TYPICAL R D S (o n ) = 2.9 Q

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000