IS21EL2 Search Results

Contextual Info: TO SHIBA 2SC4394 Transistor Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • L o w N oise Figure, H igh Gain • N F = 1.1 d B , IS21el2 = 11 dB f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE VHF'UHF 2SC3268 BAND LOW NOISE AMPLIFIER APPLICATIONS. Unit in mm FEATURES : L 6 MAX 4.6 max . . NF=1.7dB, IS21el2=15.0dB f=500MHz . NF=2dB, |S2Xel2=9.5dB (f=1000MHz) + 0108 MAXIMUM RATINGS (Ta=25°C) (145 — Cl05 CHARACTERISTIC

Contextual Info: TOSHIBA 2SC3606 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications -El- F e a tu re s • Low Noise Figure, High Gain • N F = 1 .1 d B , IS21el2 = 1 1 d B f = 1GHz -EE- A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

2SC4392

Contextual Info: 2SC4392 SILICQN NPN EPITAXIAL PLANAR t y p e t r a n s is t o r U H F - C B A N D L O W NOISE A M P LIF IE R A PP LIC A T IO N S . • • • U n it in mm High Gain : IS21el2= 12dB Typ. Low Noise Figure: NF = 2.3dB (Typ.) High frp : fr = 6.5GHz(Typ.) M A X IM U M R A TIN G S (Ta = 25°C)

Contextual Info: TOSHIBA 2SC4317 Transistor U n it in m m Silicon NPN Epitaxial Planar Type VHF ~ UHF Band Low Noise Amplifier Applications F e a tu re s • Low Noise Figure, High Gain • NF = 1.1dB, IS21el2 = 1 3 d B f= 1GHz A b s o lu te M a x im u m R a tin g s (Ta = 2 5 C )

tt 18934

Abstract: 30i sot23 5140 SN 74500
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE686 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: ft of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: IS21El2 = 12 dB @ 2 V, 7 mA, 2 GHz IS21EI2 =11 dB @ 1 V, 5m A, 2G H z

marking 93A

Abstract: transistor marking code 1325 b 11061
Contextual Info: SIEMENS BFR 93A NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2mA to 30mA • CECC.type available: CECC 50 002/256 BFR 93A R2s Q62702-F1086 1= B ro il m ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFR 280W NPN S ilicon RF T ransistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • *r = 7.5GHz F= 1.5dEJ at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BFQ 81 NPN Silicon RF Transistor • For low-noise amplifiers up to 2GHz and broadband analog and digital applications in telecommunications systems at collector currents from 0.5 mA to 20 mA. ESP: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: SIEMENS BF 775 NPN Silicon RF Transistor •Especially suitable forT V -sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BF 775 LOs Q62702-F102 1= B Package 2= E 3=C

Contextual Info: SIEMENS BFP183R NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 28 mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! BFP 183R RHs

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

BFT65

Abstract: D1279 Siemens 1414 D1275 germanium Germanium drift transistor diode a811 Siemens Halbleiter germanium transistor legiert
Contextual Info: Table of Contents Selection Guide Ordering Codes Inhaltsverzeichnis Typeniibersicht Bestellnummern Scope of Applications Technical Information Quality Specifications Einsatzhinweise Technische Angaben Qualitatsangaben Package Outlines Mounting Instructions

BFQ70

Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

2SC5006

Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA821TC NPN SILICON EPITAXIAL TWIN TRANSISTOR WITH BUILT-IN 2 x 2SC5006 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD DESCRIPTION The µPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to

Contextual Info: SIEMENS BFP 180 NPN S ilicon RF T ransistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2 to 2.5mA fT = 7GHz • F = 2 .1 d B at 900MHz BFP 180 RDs Q62702-F1377 1 =C 2=E 3=B II m ESP: Electrostatic discharge sensitive device, observe handling precaution!

BF 182 transistor

Abstract: transistor 182 marking code M21
Contextual Info: SIEMENS BFP 182 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector currents from 1mA to 20mA • f j = 8GHz F = 1.2cfB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code

Contextual Info: SANYO SEMICONDUCTOR 25E CORP ? clei707b OOObfibS D 2SC4401 S T - 3 h l7 # NPN Epitaxial Planar Silicon Transistor 2059 2754 V/U M IX, OSC, Low-Voltage Amp Applications A pplications • VHF/UHF MIX/OSC, Iow-voltage high-frequency amplifiers Features • Low-voltage operation

2SC5006

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

d5611

Abstract: NEC d7001 d5611 pin d16803 D1347 d5023 TRANSISTOR D5022 D9328 D1275 D1450
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: SIEMENS BFR 183 NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • fT = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code

Contextual Info: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM

Contextual Info: SIEMENS BFP196 NPN S ilico n RF T ra n sisto r • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 20mA to 80mA • Power amplifier for DECT and PCN systems • f j = 7.5GHz

Contextual Info: SANYO SEMICONDUCTOR CORP 2EE D T W D T b OOObfl? 1 2SC4404 T -3 I-IS # N PN Epitaxial Planar Silicon Transistor 2069 2757 UHF Local OSC, Wide-Band Amp Applications A p p lic a tio n s • U H F OSC, wide-band am plifiers F e a tu re s f f —5.0GHz typ