IS12I Search Results

2423l

Abstract: 4525 GE PA2423 PA2423L PA2423L-EV PA2423L-R DBM-142 13-APP-01
Contextual Info: PA2423L 2.4 GHz Power Amplifier IC Production Information Applications Product Description Bluetoothtm Wireless Technology Class 1 USB Dongles PCMCIA, Flash cards Access Points 2.4GHz cordless telephone A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for

BF 295

Abstract: C785 transistor BF295 START450 START450TR 31E12 nh TRANSISTOR SPICE PARAMETER, STMicroelectronics, bipolar transistor transistor C740
Contextual Info: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that

AN1294

Abstract: PD54008 PD54008S
Contextual Info: PD54008 PD54008S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11.5 dB gain @ 500 MHz / 7.5 V • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead

2425U

Abstract: SE2425U-EK1 SE2425U SE2425U-R SE2425U-EV1
Contextual Info: SE2425U RangeChargerTM 2.4 GHz Bluetooth Power Amplifier IC Preliminary Information Applications ƒ ƒ ƒ Product Description Bluetoothtm wireless technology Class 1 USB dongles, PCMCIA, flash cards, Access Points Enhanced data rate A monolithic, high-efficiency, silicon-germanium power

Contextual Info: PD55035 PD55035S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 35 W with 16.9 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

Contextual Info: HEWLETT-PACKARD/ Ih p J CHPNTS blE T> HEW LETT PA C K AR D m 44M75A4 344 •HPA INA-10386 Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Features • • • • • • D01DD31 86 Plastic Package Cascadable 50 £2 Gain Block 3 dB Bandwidth: DC to 1.8 GHz

Contextual Info: What mitim HPAECWKLAERTDT Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-03100 Features • Cascadable 50Q Gain Block • Low Noise Figure: 2.5 dB Typical at 1.5 GHz • High Gain: 26.0 dB Typical at 2.8 GHz • 3 dB Bandwidth: DC to 2.8 GHz

Contextual Info: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE

Contextual Info: PD55025 PD55025S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 25 W with 14.5 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE

BTS 132 SMD

Abstract: AN1294 J-STD-020B PD57002-E PD57002S-E
Contextual Info: PD57002-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package Description

Contextual Info: HEWLETT- PAC KARD/ CMPNTS blE » • 4 4 li7Sfl4 001033D ISO HPA IVA-05218 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Differential Input Option ram H e w l e t t vnpm P a c k a r d Feature» • Differential Input and Output Capability • DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates

PD57045S

Abstract: 700B AN1294 PD57045 PD57045-E PD57045S-E
Contextual Info: PD57045-E PD57045S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 45W with 13dB gain @ 945MHz / 28V ■ New RF plastic package

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

HP MMIC INA

Abstract: ina 123 ina 124 INA-02186 ld 1086 18 INA-02186-TR2 MAS22 MMIC ina
Contextual Info: INA-02184, INA-02186 rm Ew LETT WL'EM H PA C K A R D MagIC Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Features Package 84 • Cascadable 50 Si Gain Block • Low Noise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz 26 dB Typical at 1.5 GHz

700B

Abstract: AN1294 PD57070 PD57070S
Contextual Info: PD57070 PD57070S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 70 W with 14.7 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

GP422

Abstract: 700B AN1294 PD57070 PD57070-E PD57070S PD57070S-E PD57070STR-E PD57070TR-E
Contextual Info: PD57070-E PD57070S-E RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 70W with 14.7dB gain @ 945MHz / 28V ■ New RF plastic package

2.4GHz Cordless Phone circuit diagram

Abstract: 2.4GHz SiGe Linear Power Amplifier RF Power detector SE2522L SE2522L-EK1 SE2522L-R
Contextual Info: SE2522L RangeCharger 2.4 GHz Power Amplifier And Power Detector IC Preliminary Information Applications Product Description IEEE 802.11b DSSS radios, Wireless LAN 2.4GHz cordless phones, ISM radios Features Integrated power detector circuit High linear output power for IEEE802.11b:

TQ9206

Abstract: 8005J
Contextual Info: S E M I C O N D U C T O R , W I R E L E S S I N C C O M M U N I C A T I O N S TQ9205 2.4-2.5 GHz Amplifier/Switch tSi CO The TQ9205 is a m onolithic transm it/receive am plifier function designed specifically for spread-spectrum applications in the 2,4 - 2.5 GHz ISM band. The receive path

Contextual Info: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz

transistor TT 3043

Abstract: IJEAD
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE681 SERIES FEATURES_ • HIGH GAIN BANDWIDTH PRODUCT: h = 8 GHz • LOW NOISE FIGURE: 1.2dB at 1 GHz 1.6 dB at 2 GHz • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB AT 2 GHz • LOW COST 00 CHIP

NEC Ga FET marking L

Abstract: lg TYP 513 309 NE329S01 low noise FET NEC U SAAI Marking
Contextual Info: _ DATA SHEET_ M F P / HETERO JUNCTION FIELD EFFECT TRANSÌSTOR / NE329S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE329S01 is a Hetero Junction FET that utilizes the Unit: mm

Contextual Info: PRELIMINARY DATA SHEET_ HETERO JUNCTION FIELD EFFECT TRANSISTOR NE4210S01 X to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE4210S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

nbc 3101

Abstract: ha 1758 PACKAGE OUTLINE 83B bs 246 fet
Contextual Info: ULTRA LOW NOISE NE24283B PSEUDOMORPHIC HJ FET FEATURES_ NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Ids = 10 mA • VERY LOW NOISE FIGURE: 0.6 dB TYP at 12 GHz • HIGH ASSOCIATED GAIN: 11.0 dB TYP at 12 GHz • GATE LENGTH: 0.25 Jim

Contextual Info: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, Id s = 10 mA • VERY LOW NOISE FIGURE: 1.2 - — I I I I I- - FEATURES_ 0.45 dB Typical at 12 GHz