IRGBC Search Results

c839 transistor

Abstract: c838 transistor transistor C839 c841 transistor C839 C838 C837 c841 C839 J TRANSISTOR c842
Contextual Info: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

D-12

Abstract: IRGBC20F
Contextual Info: PD - 9.686A IRGBC20F INSULATED GATE BIPOLAR TRANSISTOR Features Fast Speed IGBT C • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 2.8V

c838 transistor

Abstract: transistor C839 c839 D-12 IRGBC20K C842 c839 transistor gc 840 C838
Contextual Info: PD - 9.1128 IRGBC20K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

IRGBC20MD2

Abstract: C-356 c355 transistor
Contextual Info: PD - 9.1106 IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

IRGBC30KD2-S

Abstract: GC smd diode AN-994 SMD-220
Contextual Info: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

D-12

Abstract: IRGBC20U C655 LAmp
Contextual Info: PD - 9.681A IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR Features UltraFast IGBT C • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve VCES = 600V VCE(sat) ≤ 3.0V

transistor c900

Abstract: transistor c904 IRGBC20KD2 c897 C901 transistor c903 c901 transistor
Contextual Info: PD - 9.1105 IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

g10 smd transistor

Abstract: IRGBC20KD2-S AN-994 SMD-220 GC smd diode
Contextual Info: PD - 9.1125 IRGBC20KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

IRGBC20UD2

Abstract: transistor C698 transistor c693 C-696 c698 transistor
Contextual Info: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

555 triangular wave

Abstract: IRGBC40K
Contextual Info: PD - 9.1073 IRGBC40K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

IRGBC30MD2

Contextual Info: PD - 9.1108 IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

C702 diode

Abstract: C705 LTA 702 N IRGBC30UD2 C704 diode C705 diode
Contextual Info: PD - 9.796A IRGBC30UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

D-12

Abstract: IRGBC20S IRGBC20S IGBT
Contextual Info: IGBT Designer’s Manual Data Sheets The IGBT devices listed in this Designer’s Manual represent International Rectifier’s IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications. C-2 PD - 9.687A IRGBC20S

ge c350

Abstract: C355 transistor IRGBC20MD2 C349 transistor c350 diode C352 mv c349 C351 FA
Contextual Info: PD - 9.1106 IRGBC20MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes

TRANSISTOR C307

Abstract: C311 Transistor ac power control applications 400v 16a C-311 D-12 IRGBC30M c307 mosfet c309
Contextual Info: PD - 9.1072 IRGBC30M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

c845

Abstract: C847 c846 transistor C-843 C844 D-12 IRGBC30K c844 g C-844 C847 RECTIFIER
Contextual Info: PD - 9.1071 IRGBC30K INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated UltraFast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz

transistor c693

Abstract: c698 transistor transistor C698 c693 transistor IRGBC20UD2 C698 C696 C693 IRGBC20UD
Contextual Info: PD - 9.790 IRGBC20UD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features C VCES = 600V • Switching-loss rating includes all "tail" losses TM • HEXFRED soft ultrafast diodes • Optimized for high operating frequency over 5kHz

Contextual Info: P D -9.1127 International K>ÎLRectifier IRGBC20M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10|js @ 125°C, Vqe = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

transistor c903

Contextual Info: P D - 9.1105 International Irai Rectifier IRGBC20KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features • • • • Short circuit rated -1 Ops @ 125°C, VGE = 15V Switching-loss rating includes all "tail" losses

Irgbc20fd2

Contextual Info: International PD - 9.788 ^Rectifier IRGBC20FD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECO VERY DIODE Fast CoPack IGBT Features • Switching-loss rating includes all “tail" losses • HEXFRED soft ultrafast diodes • Optimized for medium operating frequency 1 to

IRGBC40

Contextual Info: INTER NAT IONAL RECTIFIER SbE D • HfiSSMSS QDIQbOT 0 ■ Data Sheet No. PD-9.627A T -3 °l -03 International INSULATED GATE BIPOLAR TRANSISTOR S ^ lR G C t if te r IRGBC40 6QOV, 4QA FEATURES 600V, 40A, TO-220AB IGBT International Rectifier's IRG series of Insulated Gate

Contextual Info: P D - 9.681 A bitemational KgLRectifier IRGBC20U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International P D - 9.1108 ioR Rectifier IRGBC30MD2 Short Circuit Rated Fast Copack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 6 0 0 V Short circuit rated -10ps @125°C, VGE = 15V Switching-loss rating includes all "tail" losses

Contextual Info: International PD - 9.687A EjjgRectifier IRGBC20S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for line frequency operation to 400 Hz See Fig. 1 for Current vs. Frequency curve