IRFP448 POWER MOSFET Search Results

IRFP630

Abstract: Irfp250 irfp460 IRFPG60
Contextual Info: International HEXFET Power MOSFETs [iöRRectifier t o - 247ac T0-247AC N-Channel Part Number IRFP044 IRFP048 IRFP054 IRFP064 IRFP140 IRFP150 IRFP240 IRFP250 IRFP260 IRFP244 IRFP254 IRFP264 IRFP340 IRFP350 IRFP360 IRFP344 IRFP354 IRFP440 IRFP448 IRFP450 IRFP460

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the

IRFP448

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the

IRFP448

Abstract: irfp448 POWER MOSFET
Contextual Info: International S Rectifier PD-9.595A IRFP448 HEXFET Power MOSFET • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole Fast Switching Ease of Paralleling Simple Drive Requirements ^d s s ~ 500V ^DS on = 0 . 6 0 0

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single D RoHS* COMPLIANT Third Generation Power MOSFETs from Vishay provide the

IRFP448

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

IRFP448

Contextual Info: IRFP448, SiHFP448 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • 500 RDS(on) (Ω) VGS = 10 V 0.60 Qg (Max.) (nC) 84 Qgs (nC) 8.4 Qgd (nC) 50 Configuration Single Dynamic dV/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole

Irfp250 irfp460

Abstract: RFP264 IRFP460 IR RFP260 IRFP064N IRFP054N RFP240 IRFp450
Contextual Info: International Iö R Rectifier HEXFET Power MOSFETs •d ■o Continuous R0 Drain-to-Source ^DS on Continuous Drain Current On-State Drain Current Breakdown Max. Thermal Max. Power 100° Part Resistance Voltage Resistance Dissipation 25°C (°C/W) Number

IRFP360

Abstract: IRFPF30 S/IRFPE52 irfp9240
Contextual Info: HEXFET Power MOSFETs International üöU Rectifier Plastic Insertable Package TO-247 N-Channel Part Number V q s D'ai» Source Voltage Volts fy)S(on) On-State Resistance (Ohms) Ip Continuous Drain Current 25°C Case (Amps) >DM Drain Current (Amps) P q Max

IRFZ44 equivalent

Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
Contextual Info: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214

Irfp250 irfp460

Abstract: Irfp250 irfp260 irfp9240
Contextual Info: 1 I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS Rd V B« 0SS Drain-to-Source Breakdown Voltage (Volts) Part Number sm On-State Resistance (Ohms) IßCofitinuous Drain Current 25'C IW C RthJC Max Thermal Resistance (Amps) (Ampi) row) PD«To 2PC

STRM6511

Abstract: STR-M6511
Contextual Info: OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-M6511 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device incorporates the primary control and drive circuit with a discrete

IRFZ44 equivalent

Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
Contextual Info: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450

STR-M65

Contextual Info: STR-M6511 OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-M 6511 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operat­ ing in the quasi-resonant ringing choke mode. The device incorporates

Contextual Info: STR-M6511 OFF-LINE SWITCHING REGULATOR - WITH POWER MOSFET OUTPUT The STR-M6511 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operat­ ing in the quasi-resonant ringing choke mode. The device Mcorporates

FK-002

Abstract: Ringing Choke Converter IRFP448 STR-M6511 STRM6511
Contextual Info: Data Sheet 28102 STR-M6511 OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 OSC. S 3 4 + OVER-CURRENT PROTECTION T C FAULT LATCH R COMMON The STR-M6511 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device incorporates

STR-M6511

Abstract: m6511 STRM6511 str 450 a STR M6511 IRFP448 300 volt switching fet for smps
Contextual Info: STR-M6511 OFF-LINE SWITCHING REGULATOR – WITH POWER MOSFET OUTPUT DRAIN 1 SOURCE 2 OSC. FAULT LATCH R 3 OVER-CURRENT PROTECTION 4 + COMMON The STR-M6511 is specifically designed to meet the requirement for increased integration and reliability in off-line flyback converters operating in the quasi-resonant ringing choke mode. The device incorporates

irf1010e equivalent

Abstract: irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF9540N equivalent IRF730A equivalent IRFBE30 equivalent irfp260n IRF4905 equivalent IRFU9120 equivalent
Contextual Info: International Rectifier MOSFETs MOSFETs Continued HEXFETª Power MOSFETs Ñ TO-220AB (continued) N-Channel (continued) Mfr.Õs Type IRFZ24N* IRF1010E* IRFZ44E* IRFZ34E* IRFZ14* IRF2807* IRF3710* IRF1310N* IRF540N* IRF530N* IRF520N* IRF510* IRF3415* IRF640N

f6656

Abstract: F6653 S6709 f6654 s6708 F6624 STRS6401 f6626 f6628
Contextual Info: OFF-LINE SWITCHING REGULATORS - WITH POWER MOSFET OUTPUT r These devices are specifically designed to meet the requirements for increased integration and reliability in off-line flyback STR-S6401 and forward (STR-S6401F) converters operating in a fixed-frequency