IRFP 150 Search Results

TsE 151

Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
Contextual Info: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI

mosfet irfp 250 A

Contextual Info: Standard Power MOSFET IRFP 254 VDSS ID cont RDS(on) = 250 V = 23 A = 0.14 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 250 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 250 V VGS Continuous ±20 V VGSM Transient

power switching with IRFP450 schematic

Abstract: application IRFP450 IRFP 450 application irfp transistor irfp switching with IRFP450 schematic SCHEMATIC WITH IRFP 450 IRFP P CHANNEL SMPS CIRCUIT DIAGRAM USING TRANSISTORS IRFP453FI
Contextual Info: 3DE D DQSTôB? T • [ Z T S G S -T H O M S O N * 7 # ^ [ » » 1 ™ * ^ - s TYPE VDSs 500 500 450 450 500 500 450 450 V V V V V V V V IR F P 4 5 0 / F I - 4 5 1 /F I IR F P 4 5 2 / F I - 4 5 3 /F I N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

IRF 850

Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810
Contextual Info: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400

Contextual Info: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM

Contextual Info: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V

Contextual Info: □ IXYS Standard Power MOSFET IRFP250 VDSS = 200 V ID cont = 30 A P DS(on) = 85 mQ N-Channel Enhancement Mode Symbol Test Conditions V DSS ^ V DGR T.J = 25°C to 150°C;’ v GS Maximum Ratings = 25 °C to 150°C 200 V 200 V Continuous ±20 V v GSM Transient

Contextual Info: 1IXYS I MegaMOS FET IRFP470 V DSS D cont N-Channel Enhancement Mode p DS(on) Symbol Test Conditions Maximum Ratings V DSS ^ = 25 °C to 150°C 500 V v DGR ^ = 25 °C to 150°C; RQS = 1 M il 500 V V GS V GSM Continuous ±20 V Transient ±30 V ^D25 Tc = 25 °C

IRFP450FI

Abstract: GC507 7W53 GC508 IRFP450 C18070 IRFW450 IRFP450F
Contextual Info: 7 ^ 2 3 7 Q 0 M 5 7 4 b 1=17 « S G T H SGS-THOMSON ¡Li IT^MD éS IRFP450FI IRFW450 N - CHANNEL ENHANCEMENT MODE _POWER MOS TRANSISTORS PRELIMINARY DATA TYPE IRFP450 IRFP450FI IRFW450 • . ■ . V dss R d S(o ii Id 500 V 500 V 500 V < 0.4 n < 0.4 O

RFP9240

Abstract: IRFP P CHANNEL MOSFET* 100v
Contextual Info: HARRIS SEMICOND SECTOR 23 H a r r i s IHAS M302271 DDBSSÖS 3 4QE D IMFP9240R/P9241R IRFP9242R/P9243R Avalanche Energy Rated -Channel Power MOSFETs August 1991 Features Package TO-247 TOP VIEW • -10 A and -12A, -20 0 V and -1S 0V • rDS ON = 0 .5 0 ii and 0 .7 fi

IRFP914

Abstract: 9142R G035S7S
Contextual Info: HARRIS SEMICOND SECTOR QU H a r r i s m 43GE571 G035S7S 0 •¡HAS MOE D IRFP9140R/P9141R IRFP914 Z R /P 9 143R Avalanche Energy Rated P-Channel Power MOSFETs August 1991 Features Package TO-247 TOP VIEW • -1 9 A a n d -1 6 A , -6 0 V a n d -1 0 0 V • i'DS ON = 0 .2 0(1 a n d 0 .3 0 ÎÎ