IRFF9120 Search Results

Contextual Info: m Ha r r is IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche Energy Rated P-Channel Power MOSFETs January 1994 Package Features T 0 -2 0 5 A F BOTTOM VIEW • -3.5 A and -4A , -8 0 V and -1 0 0 V • rDS ON = 0 .6 0 0 and 0 .8 0 0 GATE SOURCE • Single Pulse Avalanche Energy Rated

IRFF9120

Contextual Info: IRFF9120 Dimensions in mm inches . P-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. P-Channel MOSFET.

MOSFET

Abstract: 2N6845
Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)

JANTX2N6845

Abstract: diode 50v 40A ir IRFF9120 JANTXV2N6845
Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International

Contextual Info: PD - 90552C IRFF9120 JANTX2N6845 JANTXV2N6845 REF:MIL-PRF-19500/563 100V, P-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-205AF Product Summary Part Number IRFF9120 BVDSS -100V RDS(on) 0.60Ω ID -4.0A  The HEXFET technology is the key to International

Contextual Info: IRFF9120 Data Sheet Title FF9 0 bt A, 0V, m, an- June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

IRFF9120

Contextual Info: IRFF9120 Data Sheet June 1999 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET • 4A, 100V • rDS ON = 0.60Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics Formerly developmental type TA17501.

Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

IRFF9120

Abstract: 2n6845 TO-205AF Package
Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

rectifier diode 1-35 LA V6

Abstract: IRFF9120 IRFF9122 IRFF9123 IRFF9121 2CS-432T
Contextual Info: Rugged Power MOSFETs File N u m b e r 2287 IRFF9120, IRFF9121 IRFF9122, IRFF9123 Avalanche-Energy-Rated P-Channel Power MOSFETs -3.5 A and -4 A, -60 V, -100 V fDS on = 0.60 Q and 0.80 O TERMINAL DIAGRAM D Features: • S ingle pulse avalanche energy rated

tc 9123

Abstract: IC 9122 IRFF9121 IRFF9122 IRFF9120 IRFF9123 9121
Contextual Info: SILICONIX INC IflE I> f Ô254735 D014Ô33 2 U IRFF9120/9121 /9122/9123 « y S ilìc o n ix J M • in c o r p o ra te d P-Channel Enhancement Mode Transistors " T - l 0! - ! 0 ! TQ-205AF BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR DSS IRFF9120 •d ,Dg r

Contextual Info: 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm inches P–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. VDSS ID(cont) RDS(on) 0.89 max. (0.035) 0.41 (0.016)

IRFF9120

Contextual Info: IRFF9120 Data Sheet January 2002 4A, 100V, 0.60 Ohm, P-Channel Power MOSFET Features • 4A, 100V This P-Channel enhancement mode silicon gate power field effect transistor is designed for applications such as switching regulators, switching converters, motor drivers,

Contextual Info: IRFF9120 Semiconductor Data Sheet June 1999 4A, 100 V, 0.60 Ohm, P-Channel Power MOSFET • 4 A ,1 0 0 V • r DS ON = 0 .6 0 ß • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d escrib es 19 d evices, 12 N -C h a n n e l and 7 P -C h a n n e l, all con tain ed in the T O -2 0 5 A F T O -3 9 p ac k a g e . T his d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

Complementary MOSFETs buz11

Abstract: irfd120 Power MOSFET Selection Guide HRF3205 MOSFET Selection Guide IRFP440 BUZ71 IRFD120 HRF3205 equivalent IRF610 complementary IRFD110
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

1RF9130

Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Contextual Info: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 JANTX2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790

2N6802 JANTX

Contextual Info: IOR IRFF Series Devices IRFF Series Data Sheet T h e IR F F D a ta S h e e t d es c rib e s 19 d ev ic e s , 12 N -C h a n n e l and 7 P -C h a n n e l, all c o n tain e d in the T 0 - 2 0 5 A F T O -3 9 p ac k a g e . This d a ta s h e e t is a rra n g e d to show com m on tab u la r and g raphical

2N7334

Abstract: irfg9110 H24 SMD
Contextual Info: Other Products from IR Government and Space H EX FET Power M O SFETs Radiation Hardened N - and P-Channel Part • d@ T ,= 25°C Iq@ Tq = 100*C A (A) RthJC Max. (K/W) Pd@ Tq = 25°C Number BVq ss (V) RDS(on) (Ohms) IRHE7110 100 IRHE8110 IRHE7130 IRHE8130

Arduino Mega2560

Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
Contextual Info: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM

MO-D36AB

Abstract: IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd irf740 STAND FOR irfm9230 2N7237 JANTXV BC 542
Contextual Info: Government/ Space Products Products From ir Life, Power-Age, Environmental and Military Testing Capabilities — USA MIL-S-19500 Qualified Life Tests and Power-Age Capabilities A. H ig h te m p e ra tu re sto ra g e life te stin g up to 2 0 0 ° C . 0 . H T R B te st c a p a b ilitie s o v e r 2 5,00 0 p o s itio n s for V G S a n d for

p12p10

Abstract: IRF9530* p-channel power MOSFET 2N6898 Power MOSFETs Field-Effect Transistors IRFP9140/P9141 irf9640 mosfet IRF9530 P-channel power p-channel irfp9240
Contextual Info: - POWER MOSFETs 5 P-CHANNEL POWER MOSFETs PAGE 2N6804 Avalanche Energy Rated P-Channel Power M OSFET. 5-3 2N6849 Avalanche Energy Rated P-Channel Power MOSFET. 5-8 2N6851