IRFD312 Search Results
IRFD312 Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFD312 | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 175.42KB | 5 | ||
| IRFD312 | International Rectifier | N-Channel Power MOSFETs | Scan | 34.17KB | 1 | ||
| IRFD312 | Unknown | Shortform Datasheet & Cross References Data | Short Form | 86.96KB | 1 | ||
| IRFD312 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 106.71KB | 1 | ||
| IRFD312 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 32.97KB | 1 | ||
| IRFD312(R) | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRFD312R | Harris Semiconductor | Power MOSFET Data Book 1990 | Scan | 175.93KB | 5 | ||
| IRFD312R | International Rectifier | Rugged Series Power MOSFETs - N-Channel | Scan | 48.45KB | 1 | ||
| IRFD312R | Unknown | Shortform Datasheet & Cross References Data | Short Form | 86.96KB | 1 |
IRFD312 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: IRFD312R Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)300m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ |
Original |
irfd312r | |
TRANSISTORS 132 GDContextual Info: tyvvys S IRFD310, IRFD311, IRFD312, IRFD313 S e m ico n d ucto r y 7 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 0.3A and 0.4A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate |
OCR Scan |
irfd310irfd311irfd312irfd313+1 | |
IRFD311
Abstract: FD31 IRFD310 IRFD312 IRFD313 a350v
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OCR Scan |
irfd310irfd311irfd312irfd313+2 | |
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Contextual Info: IRFD312 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)400 V(BR)GSS (V)20 I(D) Max. (A)300m# I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)1.2# @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.0# Minimum Operating Temp (øC)-55õ |
Original |
irfd312 | |
IRFD313R
Abstract: IRFD310R IRFD311R IRFD312R IRF0312
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OCR Scan |
irfd310rirfd311rirfd312rirfd313r+3 | |
TA17444Contextual Info: H a IRFD310, IRFD311, IRFD312, IRFD313 r r i s ” “ I CONDUCTOE 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power |
OCR Scan |
irfd310irfd311irfd312irfd313+2 | |
irfd310Contextual Info: IRFD310, IRFD311, IRFD312, IRFD313 S E M I C O N D U C T O R 0.3A and 0.4A, 350V and 400V, 3.6 and 5.0 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 0.3A and 0.4A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power |
Original |
irfd310irfd311irfd312irfd313+1 | |
irf460 to-247
Abstract: IRF450R IRF331R IRF460 IRF840R IRF341R irf362 IRFP450R THOMSON DISTRIBUTOR 58e d irfp462
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OCR Scan |
0g0s711o-204to-205o-220+14 | |
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
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Original |
2n70002n70022sj3772sj378+16 | |
irf840 rf
Abstract: THOMSON DISTRIBUTOR IRF440 TO-247 irf350* to-247 package THOMSON 58E THOMSON DISTRIBUTOR 58e d IRF320 IRF322 irf420 IRF332
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OCR Scan |
102bfi73to-204to-205t0-220+13 | |
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Contextual Info: • 43 025 71 0 0 5 4 1 2 0 237 ■ S3 HARRIS HAS IR F D 3 1 0 /3 1 1 /3 1 2 /3 1 3 ÌRFD31 O R /311R /312R /313R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u s t 19 91 Package Features 4-PIN DIP TOP VIEW • 0.3A and 0.4A, 350V - 400V • roS on = 3-6 fl ancl 5-o fl |
OCR Scan |
rfd31/311r/312r/313r+6 | |
fd312
Abstract: fd 312 s
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OCR Scan |
irfd310/irfd31or/311r/312r/313rirfd310irfd311+8 | |
equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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OCR Scan |
1-800-4harrisequivalent data book of 10n60 mosfetmc14016cpgd4511+7 |