IRF610 IR Search Results

IRF612

Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
Contextual Info: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V

Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF610 N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR This TM O S Power FET is designed for low voltage, high speed pow er switching applications such as switching regulators, converters, solenoid and relay drivers.

IRF610

Abstract: power MOSFET IRF610 33a marking
Contextual Info: International S Rectifier P D -9.3261 IRF610 HEXFET Power MOSFET • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 200V R DS on = 1 lD = 3.3A Description DATA SH EETS

Contextual Info: IRF610 Semiconductor Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

power MOSFET IRF610

Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

IRF610

Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

IRF013

Abstract: D33A power MOSFET IRF610 1RF610 irf610 samsung irf610 mosfet IRF61Q irf610 613 33A
Contextual Info: N-CHANNEL POWER MOSFETS IRF610/611/612/613 FEATURES TO-220 • Lower R d s ON • Improved inductive ruggedness • Fast switching times • • • • Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)

IRF610

Abstract: power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet
Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration

IRF610

Abstract: IRF612 irf P 611 IRF610-613 IRF611 IRF613 MTP2N18 MTP2N20
Contextual Info: 3469674 FAIRCHILD SEMICONDUCTOR ? IRF610-613 r~ 3 ? -d ? MTP2N18/2N20 N-ChdnflGl POWST ft/IOSFETSj 3.5 A, 150-200 V b h m b f a ir c h il d A Schlumberger Company Power And Discrete Division TO-220AB Description These devices are n-channel, enhancement mode, power

intersil irf610

Abstract: IRF610 TB334 power MOSFET IRF610
Contextual Info: IRF610 Data Sheet June 1999 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

IRF610

Abstract: TB334 power MOSFET IRF610 IRF61
Contextual Info: IRF610 Data Sheet January 2002 3.3A, 200V, 1.500 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

Contextual Info: S A M S U N G E L E C T R O N I C S INC b4E » • 7^4142 O O l E l b T 3 ST « S M Ù K N-CHANNEL POWER MOSFETS IRF610/611 /612/613 FEATURES • • • • • • • Lower Ros ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRF610

Abstract: 1RF610-613 1RF610 IRF612 IRF611 IRF613 MTP2N20 irf 613 IRF610-613 MTP2N18
Contextual Info: 3469674 FAIRCHI LD S E M I C O ND UC TO R TiTi PE B 3 M £3 ^ Ez,7 M IRF610-613 7'- ?- <3? MTP2N18/2N20 N-Channel Power MOSFETs, 3.5 A, 150-200 V • u ■naïf— — f a ir c h il d A Schlum berger Com pany Power And Discrete Division D e s c rip tio n Th ese devices are n-channel, enhancement mode, power

Contextual Info: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents

MOSFET irf 939

Abstract: irf610
Contextual Info: HE D I 4ÔS54S2 GaGfl4bb Data Sheet No. PD-9.326H 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER l l O R l REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IR F6 1 Q IRFS1 1 IRF6 1 2 N-CHANNEL IRFG1 3 200 Volt, 1.5 Ohm HEXFET T0-220AB Plastic Package

IRF610

Contextual Info: IRF610.611 D84BN2.M2 [FiMM-RfiS FUT HELD EFFECT POWER TRANSISTOR 2.5 AMPERES 200,150 VOLTS Md S ON = 1.5 n This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

irf 2203

Abstract: IRF610B_FP001 IRF*_FP001 IRF 870 irf 146
Contextual Info: IRF610B/IRFS610B IRF610B/IRFS610B 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to

irf630 irf640

Abstract: MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20 IRF710 IRF712 IRF720
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — TO-220AB (continued) CASE 221A-02 (Ohms) Max (Amp) 400 5 0.8 1 Device IRF712 1.3 20 2 50 1.5 20 MTP2N40 3.6 0.8 IRF710 3.3 1.5 MTP3N40 2.5 1.8 1.5 75 IRF722 2.5 40 IRF720 3 MTP4N40

icl7071

Abstract: LM317 B1588 lm317 to92 ka3842 equivalent mc3842 ka3842 equivalent uc3842 B1115 LM317 sot23 mc3843a
Contextual Info: MANF. BAY Alpha Semi AS1115 AS1117 AS1580 AS1581 AS1582 AS1583 AS2431 AS2810 AS2815 AS2830 AS2850 AS2880 AS2930 AS2931 AS2950 AS2951 AS431 TL431 AS431C AS432 LP2950 LP2951 B1115 B1117 B1580 B1581 B1582 B1583 B3431 B1117 B1586 B1587 B1585 B1584 LM2930 LM2931

1RF620

Abstract: 1RF540 1RF630 1RF640 1RF530 1RF520 IRF625 RF543 BS250F BS107PT
Contextual Info: - 244 - f ä! SD210 SD211 SD212 S0213 S02T4 SD215 SD211 SD219 BS107P BSI07PT BSUOF BS17ÜP DS250F BS250P 1RF 520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF620 IRF621 IRF622 IRF623 IRF630 IRF631 1RF632 IRF633 € tt € CALOGIC CALOGIC CALOGIC CALOGIC

IRF1401

Abstract: IRF4311 IRF1501 IRF4431 IRF4411 IRF3411 IRF7431 IRF8331 IRF8411 IRF6221
Contextual Info: C T ’ SiR conix in c o r p o r a te d Industry Standard Commercial MOSFETs Part Number V BR^DSS Id (A rDS(ON) (A) Package Part Number V(BR^[)SS Id (A) rDS(ON) (A) Package IRF1301 100 14 0.18 TO-2G4 IRF432’ 500 4.0 2.0 T0-204 IRF1311 60 14 0.18 T0-204