Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    SIHF610 Search Results

    SF Impression Pixel

    SIHF610 Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHF610S-GE3

    Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF610S-GE3 1
    • 1 $0.81
    • 10 $0.58
    • 100 $0.46
    • 1000 $0.43
    • 10000 $0.43
    		Get Quote
    EBV Elektronik SIHF610S-GE3 25 Weeks 50
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    SIHF610 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    power MOSFET IRF610

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+32011/65/eu12-mar-12power mosfet irf610 PDF

    IRF610

    Abstract: MOSFET dynamic irf610pbf power MOSFET IRF610
    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+411-mar-11mosfet dynamicirf610pbfpower mosfet irf610 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610so-2632002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+22011/65/eu12-mar-12 PDF

    IRF610S

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610so-2632002/95/ec+111-mar-11 PDF

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+22011/65/eujs709a PDF

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+22011/65/eujs709a PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irf610ssihf610ssmd-22012-mar-07 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+111-mar-11 PDF

    AN609

    Abstract: IRF610 90239 90-239 IRF610R
    Contextual Info: IRF610_RC, SiHF610_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irf610sihf610an60901-mar-10+39023990-239irf610r PDF

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+22011/65/eujs709a PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irf610ssihf610ssmd-22018-jul-08 PDF

    IRF610S

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irf610ssihf610so-26318-jul-08 PDF

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRF610

    Abstract: irf610 ir power MOSFET IRF610
    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf610sihf610o-22012-mar-07+2irf610 irpower mosfet irf610 PDF

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+22011/65/eu12-mar-12 PDF

    IRF610

    Abstract: power MOSFET IRF610 IRF610PBF MOSFET irf610 mosfet
    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC) Configuration


    Original     		irf610sihf610o-22018-jul-08+3power mosfet irf610irf610pbf mosfetirf610 mosfet PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+118-jul-08 PDF

    power MOSFET IRF610

    Contextual Info: IRF610, SiHF610 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 8.2 • Fast Switching Qgs (nC) 1.8 • Ease of Paralleling 4.5 • Simple Drive Requirements Qgd (nC)


    Original     		irf610sihf6102002/95/eco-220ab+211-mar-11power mosfet irf610 PDF

    Contextual Info: IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 1.5 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single G G D D2PAK (TO-263)


    Original     		irf610ssihf610sirf610lsihf610l+5o-263o-2622002/95/ec2011/65/eujs709a PDF