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    SIHF610S Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SIHF610S-GE3

    Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHF610S-GE3 1
    • 1 $0.81
    • 10 $0.59
    • 100 $0.47
    • 1000 $0.43
    • 10000 $0.43
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    Mouser Electronics SIHF610S-GE3
    • 1 $1.59
    • 10 $0.99
    • 100 $0.65
    • 1000 $0.44
    • 10000 $0.34
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    EBV Elektronik SIHF610S-GE3 25 Weeks 50
    • 1 -
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    Vishay Intertechnologies SIHF610STRR-GE3

    MOSFETs MOSFET N-CHANNEL 200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHF610STRR-GE3
    • 1 $1.59
    • 10 $0.99
    • 100 $0.65
    • 1000 $0.44
    • 10000 $0.34
    		Get Quote

    Vishay Intertechnologies SIHF610STRL-GE3

    MOSFETs MOSFET N-CHANNEL 200V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SIHF610STRL-GE3
    • 1 $1.59
    • 10 $0.99
    • 100 $0.65
    • 1000 $0.44
    • 10000 $0.34
    		Get Quote

    SIHF610S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610so-2632002/95/ec+32011/65/eujs709a02-oct-12 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+22011/65/eu12-mar-12 PDF

    IRF610S

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610so-2632002/95/ec+111-mar-11 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irf610ssihf610ssmd-22012-mar-07 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single DESCRIPTION D D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+111-mar-11 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single Surface Mount Available in Tape and Reel Dynamic dV/dt Rating


    Original     		irf610ssihf610ssmd-22018-jul-08 PDF

    IRF610S

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) (Ω) VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single RoHS* COMPLIANT Third generation Power MOSFETs from Vishay provide the


    Original     		irf610ssihf610so-26318-jul-08 PDF

    AN609

    Abstract: IRF610S
    Contextual Info: IRF610S_RC, SiHF610S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		irf610ssihf610san60901-mar-10 PDF

    Contextual Info: IRF610S, SiHF610S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V 200 RDS(on) () VGS = 10 V 1.5 Qg (Max.) (nC) 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single D DESCRIPTION D2PAK (TO-263) G G D S • Halogen-free According to IEC 61249-2-21


    Original     		irf610ssihf610s2002/95/eco-263+118-jul-08 PDF

    Contextual Info: IRF610S, SiHF610S, IRF610L, SiHF610L www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 200 RDS(on) () VGS = 10 V Qg (Max.) (nC) 1.5 8.2 Qgs (nC) 1.8 Qgd (nC) 4.5 Configuration Single G G D D2PAK (TO-263)


    Original     		irf610ssihf610sirf610lsihf610l+5o-263o-2622002/95/ec2011/65/eujs709a PDF