IR 9144 Search Results

2N6764 JANTX

Abstract: 91447 IR2113L
Contextual Info: Government / Space Products Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Description Datasheets IRH7054 IRH7130 IRH7150 IRH7230 IRH7250 IRH7250SE IRHF7330SE IRHF7430SE IRH7450

2N6782 JANTX

Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Contextual Info: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE

MT1115

Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
Contextual Info: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir

Mifare antenna emission

Abstract: 5mm warm white LED 14000 mcd LED 18000 mcd 3mm white 13,56 MHz RFID antenna SPNovaLED-150 chip antenna rfid UHF Smart Core Z2 3.5 mm White LED Mifare protocol LED 18000 mcd
Contextual Info: Features: - Super high brightness surface mount LED. - High flux output. - C om pact package outline LxW of 6.0 x 6.0mm. - Ultra low height profile - 1 ,5mm. - Design for high current drive. - Qualified to JEDEC moisture sensitivity Level 2. - Com patible to IR reflow soldering.

IRF734

Abstract: irf9640 REPLACEMENT GUIDE IRF3205 smd IRGTI165F06 irg4pc50fd *g4pc50w IRGKI115U06 IRGTI200F06 *gBC20f IRLIZ34
Contextual Info: Electronic Switches Catalog of Available Documents Revised 5/11/99 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566

J708

Abstract: 2X3-16 99 LM4
Contextual Info: PART NO. QQg n to .M Scries No.- X X & Q _ l - Tail Type SA: Slot 1KT D: No Kink No Of Pins- 02: 2 Pnlr Kinks Contort.- 04-: 4 P a ir Kinks • Gold Plating B! B ra ss P: Phosphor Bronze 01: Cold Flash Rating- 10: IQ u ' Gold

UA317

Abstract: Fairchild dtl catalog free transistor equivalent book 2sc lm741 MA339PC MA725HM MA7805KM UA759 gi 9640 diod MA4136PC
Contextual Info: $9.9! •— r c m m pq, F A IR C H IL D A S chlum berger C om pany Linear Data Book Linear Division Introduction The Linear Data Book includes the standard linear product line plus our new W inchester Disk Drive circuits and CLASIC standard cells. For ease o f reference linear

FGE0500

Abstract: FGE2000 FGE2500 F100K ECL 300 series and design guide Fairchild 100K series ECL Fairchild ZN 1010 1240 picosecond la 4440 LA 4440 circuit diagram PS-1050
Contextual Info: FGE Series ECL Gate Arrays F A IR C H IL D A Schlumberc J/n A 005596 January 1986 n Description 0r>y ^ Gate Array Division FiC The FGE Series of ECL gate arrays are the fastest silicon gate arrays commercially available. These advanced ECL gate arrays, ranging from 100 to 2840 equivalent gates, offer

78It

Contextual Info: TYPL RKC :< O a\ R 2R LADDER N ETW O R K $! p THICK FILM M ED IU M PRO FILE No. of Pins , umax. mm in. No. of Bits 6 7 8 9 10 15.8 18.3 20.9 23.4 25.9 0.622 0.720 0.823 0.921 1.020 4 5 7 6 8 R A T IN G R EQ U IR EM EN T S KOASS012 STAN DA RD R R ESIST A N C E VALUE

IRG4BC20U

Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC20U

Abstract: IRG4BC20
Contextual Info: PD - 91448D IRG4BC20U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

Contextual Info: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRG4BC20UD

Contextual Info: PD 91449B IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Generation 4 IGBT design provides tighter

IRG4BC20UD equivalent

Abstract: IRG4BC20UD PD-91449C
Contextual Info: PD-91449C IRG4BC20UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than

IRHNA9064

Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Contextual Info: PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD Ω, RAD HARD HEXFET -60 Volt, 0.045Ω International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: PD - 91447A IRHNA9064 IRHNA93064 JANSR2N7424U JANSF2N7424U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RAD HARD W , RAD HARD HEXFET -60 Volt, 0.045W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

IRHNA9064

Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Contextual Info: PD - 91447B RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si)

Contextual Info: PD - 91447C IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655 RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si)

IRHNA9064

Abstract: IRHNA93064 JANSF2N7424U JANSR2N7424U
Contextual Info: PD - 91447C RADIATION HARDENED POWER MOSFET SURFACE MOUNT SMD-2 IRHNA9064 JANSR2N7424U 60V, P-CHANNEL REF: MIL-PRF-19500/655 RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHNA9064 100K Rads (Si) IRHNA93064 300K Rads (Si)

Contextual Info: Government and Space Products Internationa! XQR Rectifier p *0 Part RDS on bVDSS (V) Number T c=, 2 r c (A) D @ TC = 25°C (W) T , = lOO°C (A) HEXFET Power MOSFETs Fax Case on Demand Outline Number Key SEE Hardened TO-254AA N-Channel 31 19 250 91393 T

smd 10 20U

Abstract: 4BC20U irg4pc50ud 91571 4bc30ud G4BC IRG4PH50UD
Contextual Info: International IG R Rectifier Part Number IGBTs VCES Collector-to-Emitter Voltage V IKax.Va(oit) Collector-to-Emitter Voltage M •c Continuous Collector Current T ,= 2 5 °C Tc = 25°C (A) (A) Pd Max. Power Dissipation (W) Fax on Demand Number Case Outline

BZW14 diode

Abstract: IC03b TEA1062A wheatstone bridge piezoelectric transducer force Applications Handbook for Wired telecom system TEA1062 TEA1062AM1 TEA1062AT TEA1062M1 TEA1062T
Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1062; TEA1062A Low voltage transmission circuits with dialler interface Product specification Supersedes data of 1996 Dec 04 File under Integrated Circuits, IC03 1997 Sep 03 Philips Semiconductors Product specification Low voltage transmission circuits with