IR 444 Search Results

PLX-1000

Abstract: HSDL-7000 EN60825-1 HSDL-1000
Contextual Info: H IR 3/16 Encode/Decode IC Technical Data HSDL-7000 Features Description • Compliant with IrDA Physical Layer Specs • Interfaces with IrDA Compliant HSDL-1000 IR Transceiver • 1 Micron CMOS Gate Array • Used in Conjunction with Standard 16550 UART

Contextual Info: W hp\ H EW LETT PACKARD 1 "fíM IR Secure, Hermetic, Panel Mount Solid State Lamps DESC Approved Technical Data Features 87019G01 Green 87019Y01 Yellow • Choice of Colors 568 nm Green • Designed for IR Secure 585 nm Yellow Lighting Applications Mount Package

Contextual Info: Whpl H EW LETT WLEM PACKARD IR 3/16 Encode/Decode IC Technical Data HSDL-7000 Features Description • Compliant w ith IrDA Physical Layer Specs • Interfaces w ith IrDA Compliant HSDL-1000 IR Transceiver • 1 Micron CMOS Gate Array • Used in Conjunction with

ZLLS350TA

Abstract: ZLLS350 ZLLS350TC
Contextual Info: ZLLS350 SOD523 40V LOW LEAKAGE SCHOTTKY BARRIER DIODE SUMMARY VR = 40V; IFAV = 650mA; VF = 570mV typ @ 100mA; IR = 1µA typ @ 30V DESCRIPTION Packaged in the SOD523 package this addition to the Zetex Low Leakage Schottky diode range offers an ideal low VF/IR performance combined with a

PLX-1000

Abstract: FLIP FLOP toggle
Contextual Info: Wfipl HEW LETT mLftm P A C K A R D IR 3/16 Encode/Decode IC Technical Data HSDL-7000 Features Description • Compliant with IrDA Physical Layer Specs • Interfaces w ith IrDA Compliant HSDL-1000 IR Transceiver • 1 Micron CMOS Gate Array • Used in Conjunction with

LA 3660

Abstract: IRF48 PICO Electronics IRA series irc120 IRC240 IC 745 GU
Contextual Info: SERIES IR - SINGLE OUTPUT SERIES IR Iso late d R e gu late d up to 10 W att D C -D C C onverters W ide Input Range/ up to 3.33:1 Fully R e gu lated A ll U n its S h ie lded New 100 VDC Output Modej NOW 2 Volts and 3.3 Volts DC OUTPUT AVAILABLE F EA T U R E S:

4446

Abstract: diode 4148
Contextual Info: A C T IV E C O M P O N EN TS F O R H Y B R ID C IR C U IT S C O M PO SAN TS A C T IF S P O U R C IR C U IT S H Y B R ID E S Silicon signal diodes, general purpose chips Diodes de signa! au silicium, usage généra! (pastilles) Type Type VR (V) 'f (mA) 'fm

DIODE SMD S44

Abstract: TE 2161 motorola tic 122 C510 C768 ITS04492 MQFP44 TQFP48 uc 3081 IOM-2 Handler
Contextual Info: Dat a Sh eet , DS 1, S ept . 20 00 SBCX-X S / T B u s I n t e r f a c e C ir c u i t E x t e n d e d PEB/PEF 3081 Version 1.3 W ir e d C o m mu n i ca t io n s N e v e r s t o p t h i n k i n g . Edition 2000-09-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53,

Contextual Info: DB LECTRO Inc. MPA Metallized Polyester Film Capacitor Axial and Oval FEATURE -Non-inductive construction and self-healong -Low DF and high IR -High capacitance value available and compact size APPLICATION -Coupling decoupling by-passing and timing circuit

ZXLD1350E5

Abstract: BRIDGE-RECTIFIER 12v 1A power Schottky bridge Schottky bridge design ideas DIODE RECTIFIER BRIDGE SINGLE MR16P DN86 TS16949 MR16LED
Contextual Info: ZXSBMR16PT8 MR16: Schottky bridge rectifier plus freewheel diode Summary Schottky Bridge and Freewheel diode for use in MR16 LED Drive Internal Ambient Temperature = 90°C MAX* VR =13.2VRMS; IF = 0.4AAVG; IR = 10µA *within MR16 circuit enclosure Description

str f 6264

Abstract: BROWN BOVERI str 6264 uge 1112 AY4 rectificadores "sim welding" diagram Kopp MS 85 ABB CO-8 CI 6264 din 6900
Contextual Info: High Voltage rectifiers Hochspannungsgleichrichter Edition 97 Reg. Nr. 2743-02 Symbols and Definitions Kurzzeichen und Begriffe a Acceleration a Rüttelfestigkeit IF AV M IF(RMS) IFSM IR Maximum mean forward current Maximum RMS forward current Surge forward current

NEC protocol

Abstract: NEC Infrared protocol application note philips RC5 protocol RC5 IR NEC IR protocol NEC IR philips RC5 rc5 protocol RC5 command reference HCS08/rc5 protocol
Contextual Info: Freescale Semiconductor Application Note Document Number: AN4152 Rev. 0.0 , 06/2010 Recommendations for Implementing an IR Blaster on MC1321x and MC9S08QE128 Based IEEE 802.15.4 Wireless Nodes 1 Introduction The availability of low-cost 2.4 GHz ISM band IEEE

808nm 1000mW

Abstract: 1000mW laser diode IR-Laser-Diode 808nm 1000mW laser 808nm 808nm laser diode 1000mw IR-Laser-Diode IR-Laser-Diode 500mW 1000-mW 808nm 500mw
Contextual Info: 8013-2323-AU 808nm 1000mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature

Contextual Info: Series 4448 Surface Mount High Current Power Toroids SERIES 4448 POWDERED IRON CORE ite Pot, Terminal #1 I t - \s ¿ ir s j 4 M fia tJM =* i S ta rt 99 1 4448-02M 4448-04M 4448-06M 4448-08M 4448-10M 4448-12M 4448-14L 4448- 16L 4448- 18L 4448-20L 4448-22L 4448-24L

104 mylar capacitor datasheet

Abstract: mylar capacitor 154 capacitor polyester MPP 104 mylar capacitor MPP Metallized Polyester Film Capacitor capacitor polyester MPT MEF 0.47 mpp 335 j
Contextual Info: DB LECRTO Inc. MPT Metallized Polyester Film Capacitor Tubular Product MKP FEATURE -Non-inductive construction and self-healong RC -Low DF and high IR MEF -High capacitance value available and compact size MET APPLICATION -Coupling decoupling by-passing and timing circuit

mpp 335 j

Abstract: MEF 250 MPP Metallized Polyester Film Capacitor mpp film capacitor capacitor polyester MPP capacitor MPP C3000 film capacitor PPN C3000F S 223 MPP
Contextual Info: DB LECTRO Inc. MPP Metallized Polyester Film Capacitor Coating Product MKP FEATURE -Non-inductive and self-healing RC -Low DF and gigh IR -High stability of capacitance and DF versus temperature and frequency -Very small inherent temperature rise MEF MET

IR-Laser-Diode 808nm 300mw

Abstract: 808nm 500mw IR-Laser-Diode 500mW IR-Laser-Diode 808nm IR-Laser-Diode 808nm 300mw laser diode 808nm 300mW 8052-1313-AU 500MW ir laser
Contextual Info: 8052-1313-AU 808nm 500mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Reverse Voltage Reverse Voltage Vr Voltage PIN PD Vr(PIN) Top Operating Temperature

808nm 200mw

Abstract: IR-Laser-Diode 808nm laser diode 200mw 808nm laser diode IR-Laser-Diode 200MW 200-mW 8022-1363-AU diode laser 808nm 200mW
Contextual Info: 8022-1363-AU 808nm 200mW IR Laser Diodes AUTO PACKAGE Specifications Device Package Type Laser Diode TO-5 φ9.0mm •Absolute Maximum Ratings(Tc=25℃) Symbols Characteristics Po Optical Output Laser Vr Reverse Voltage PIN PD Vr(PIN) Top Operating Temperature

Diode 20A/30v

Abstract: SCHOTTKY 20A 40V Schottky Diode 40V 5A ZHCS1000 ZLLS1000 ZLLS1000TA ZLLS1000TC IR-1120
Contextual Info: ZLLS1000 40V SILICON HIGH CURRENT LOW LEAKAGE SCHOTTKY DIODE SUMMARY Schottky Diode VR = 40V; IF = 1.16A; IR = 20 A DESCRIPTION This compact SOT23 packaged Schottky diode offers users an excellent performance combination comprising high current operation, extremely low leakage and low

Contextual Info: ÄEW M i DNHF@IRßM!rilON in y 80960MC EMBEDDED 32-BIT MICROPROCESSOR WITH INTEGRATED FLOATING-POINT UNIT AND MEMORY MANAGEMENT UNIT Military High-Performance Embedded Architecture — 25 MIPS Burst Execution at 25 MHz — 9.4 MIPS* Sustained Execution at

Contextual Info: FDC37C93XFR SMC ADVANCE INFORMATION STANDARD M IC R O SY ST EM S CORPORATION Plug and Play Compatible Ultra I/O Controller with Fast IR FEATURES ISA Plug-and-Play Standard {Version 1.Oa Compatible Register Set Soft Power Management, SMI Support ACCESS.bus Support

Contextual Info: 1.0 DSL Systems 1.1 Voice P a ir Gain Applications A well-established market exists for voice pair gain systems. In such systems, several simultaneous phone conversations are transported over a single twisted pair. Such systems are used by telecommunications service providers to maximize

A 434 RF Receiver TRANSMITTER PAIR "

Abstract: circuit diagram of Garage Door Openers hosonic 434 mhz xtal oscillator A 434 RF Receiver TRANSMITTER PAIR 434 mhz oscillator AFC marking Si4311 bt1 marking circuit diagram of laser based door opener
Contextual Info: S i 4 3 11 315/433.92 MH Z FSK R ECEIVER Features   Applications Satellite set-top box receivers Remote controls, IR replacement/extension  Garage and gate door openers  Home automation and security Ordering Information: See page 14. Remote keyless entry

circuit diagram of Garage Door Openers

Abstract: hosonic SI4312-B10-GM 434 mhz oscillator Si4312 keyless entry gm transmitters RF receiver 434 Mhz Si4312 rx IPC-SM-782
Contextual Info: Si4312 315/433.92 MH Z O O K R ECEIVER Features    Applications     Satellite set-top box receivers Remote controls, IR replacement/extension  Garage and gate door openers  Home automation and security Ordering Information: See page 15.