IR 3J Search Results

54S38

Abstract: SN74298 SN74265 54175 NES 1004 naval specification 74L95 Transistor AF 138 07802-1 SN7437 SN54LS195A
Contextual Info: m - G EN ER A L IN F O R M A TIO N INDEXES Numerical • Functional/Selection Guide O R D E R IN G INSTRUCTIO NS A N D M E C H A N IC A L D ATA 1 1 5 4/74 F A M IL Y SSI C IR CU ITS 2 I 54/74 F A M IL Y M S I/LSI C IR C U ITS 3 S E R IE S 29000 S S I C IR C U IT S

CR02AM

Abstract: F1037 two terminal flasher unit pIC 4020 CD 4020
Contextual Info: MITSUBISHI SEMICONDUCTOR THYRISTOR CR02AM LOW POWER USE PLANAR PASSIVATION TYPE OUTLINE DRAWING Dim ensions in mm *5.0 MAX 0 T1 TERMINAL T2 TERMINAL GATE TERMINAL C IR C U M S C R IB E C IR C L E * 0 .7 JEDEC : TO-92 APPLICATION Solid state relay, leakage protector, fire alarm, timer, ringcounter, electric blankets, strobe flasher,

Contextual Info: • 4302271 QDS4033 T04 ■ 2 H A R R IS HAS IR F640/641/642/643 IR F640R /641R /642R /643R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T0-22QAB TOP VIEW • 16A and 18A, 150V - 200V • rDS(on = 0 .1 8 0 and 0 .2 2 0 • Single Pulse Avalanche Energy Rated*

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes SOT-323 RB706F-40 Schottky Barrier Diode FEATURES z Small package z Low VF and low IR z High reliability 1 3 2 MAKING: 3J• Maximum Ratings @Ta=25℃ Parameter Symbol Limit

LG color tv Circuit Diagram schematics

Abstract: texas ttl YJ 162A Texas Instruments TTL integrated circuits catalog SN74180 AC digital voltmeter using 7107 Sii 9024 MC3123 sn74ls860 SN7490AJ sn74243
Contextual Info: IN D EXES Alphanumeric • Functional/Selection Guide IN T E R C H A N G E A B ILIT Y GUIDE G E N E R A L INFORM ATION O RD ERIN G IN STRUCTIO N S AND M ECH A N ICA L D A TA 5 4 /7 4 FA M ILIE S OF CO M PATIBLE T T L C IR C U ITS 54/74 F A M IL Y SSI C IR C U ITS

DIODE 3J

Abstract: RB706F-40
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diode SOT-323 RB706F-40 Schottky Diode 1. ANODE 2. CATHODE FEATURES z Small package z Low VF and low IR. z High reliability. 3. C,A MAKING: 3J• Maximum Ratings @TA=25℃ Parameter

SEG NC3

Abstract: NJU6460A
Contextual Info: « « co co "N V ir> iz. Sè ir» i □ A n i -F5 -H o HJg •CV i3i3 -c* rffQJf à ff •« S i S f H ’DlP {+ 2 U Ü 5 K j. ÌN 3 IÌ. rs * t r i ,->» § • X . co #rB7fcSïfê co co ■ *a - j g ^ m ia i i 3i 3 4 OC Iff 5 X . I >i - M2 - j - A IO c , LO

Contextual Info: HSP3125F3, TISP3I50F3, TISP3180F3 DUAL SYMMETRICAL TRANSIENT VOLTAGE SUPPRESSORS _SLFgOÜ - MARCH ir M - REVISED SEPTEMBER 1994 TELECOMMUNICATION SYSTEM SECONDARY PROTECTION Ion-Implanted Breakdown Region Precise and Stable Voltage Low Voltage Overshoot under Surge

KU107-01

Abstract: ku107 ku1090 optoswitch KU110-01
Contextual Info: •OPTOSWITCH ▼OPTOSWICH Absolute Maximum Ratings Input Operating Characteristics Output Input Collector Emitter Type No. Power Forward Reverse Emitter Collector Collector Operating Dissipation Current Voltage Voltage Voltage Current Temp. Ir MAX. 30 5 20

high intensity IR led

Abstract: infrared diode high power infrared led high power ir led LVIR32643
Contextual Info: LIGITEK L V IR 3 2 6 4 3 INFRARED EMITTING DIODES SERIES Package Dimension Features • High radiant intensity • Suitable for pulsed applications • Low average degradation 3Jo 3. h s \ 3|5 4 . 1,5MAXJ Description The LVIR32643 series are high power solution grown epitaxial Gallium Arsenide

hokuriku

Contextual Info: <3jd ¡£>- HOKURIKU '96 GENERAL CATALOG H yb rid In tegrate d C ir c u it s . D Printed R e sisto r C irc u its. Tactile S w it c h e s .(D Variable R e s is t o r s .(J

SMALL SIGNAL SCHOTTKY DIODES DO-35

Abstract: ultra low drop, high current diode 1N60P DO-35 silicon Rectifier diodes HALF WAVE RECTIFIER CIRCUITS high speed
Contextual Info: DC COMPONENTS CO., LTD. 1N60P RECTIFIER SPECIALISTS R TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY DIODES FEATURES * Metal silicon junction, majority carrier conduction. * High current capability, low forward voltage drop. * * * * * Extremely low reverse current IR

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 13 , 19 LOC DIST G ALL RIGHTS RESERVED. REVISIONS 14 LTR DESCRIPTION DATE REV / 0720-0977-96 H 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L^ ) RANGE 2 2 - 1 G A WG

TUD22

Contextual Info: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION flV AMP INCORPORATED. COPYRIGHT 13 , 19 LOC G ALL RIGHTS RESERVED. REVISIONS DIST 14 LTR H DESCRIPTION DATE REV / 0720-0977-96 3JUN96 DWN APVD ME BB D D LR71ââ W IR E BODY ^ L ^ ) RAN G E 2 2 -1 G A WG

250WV

Abstract: 100WV T f2d MPE capacitors
Contextual Info: FILM CAPACITORS ♦CHARACTERISTICS Typical characteristics are shown below. Capacitances are 0.1 pi F ♦ TEMPERATURE CHARACTERISTICS tans Capacitance c/c(%) - 6 -20 20 40 60 80 100 -40 Dissipation factor -20 20 40 Insulation resistance IR{M Q )

Contextual Info: *70# TOX 9001 Gallium Aluminum Arsenide Light Emitting Diode Texas Optoelectronics, Inc. DESCRIPTION FEATURES • • This is a high radiance GaAIAs IR LED optimized for fiber optic applications requiring high power and fast response time. ABSOLUTE MAXIMUM RATINGS

Contextual Info: TOX 9003 Gallium Aluminum Arsenide _ Light Emitting Diode DESCRIPTION FEATURES High radiance GaAIAs IR LED optimized for coupling to a variety of fibers. The unique LED chip design combines high power coupling with wide bandwidth operation. • • •

C858C

Contextual Info: BC856A - BC858C VISHAY PNP SURFACE MOUNT SMALL SIGNALTRANSISTORS /uTE M ir I POWER SEMICONDUCTOR J Features • • • • • Epitaxial Die Construction Ideally Suited tor Automatic Insertion 310 mW Power Dissipation Complementary NPN Types Available BC846-BC848)

Contextual Info: Housings - WAVEBOX Printed circ u it board S 22.5 WAVEBOX S 22.5 3j<_gXJ—-j*- »1 t Material FR 1.0 m« / 0.35 p CU WAVEBOX L 22.5 H-S Printed c irc u it board L 22.5 um z ir - WAVEBOX 12.5 208 W eldm illler WAVEBOX 17.5 Rail-mounted profiles RS RS 80 RS 100

E1A4A

Abstract: E13288 bb 8721 52956-3 7461
Contextual Info: 4 THIS DRAWINO IS UNPUBLISHED. <£ RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 13 , 19 6 ALL RIGHTS RESERVED. REVISIONS DIST LOC 14 LTR DESCRIPTION DATE REV / 0720-0977-96 K DWN APVD 3JUN96 ME BB D LR71ââ W IR E BODY 4 . 1 7 ±0 . 1 3 -[. 1 6 4 ± . 0 0 5 J

Contextual Info: SG7900AISG7900AC SG7900/SG7900C 3jLJLJUr^ HEN EF^L U N E A R IN TE G R A TE D C IR C U IT S NEGATIVE FIXED VOLTAGE REGULATOR DESCRIPTION FEATURES The SG7900A/SG7900 series of negative regulators offer self-contained, fixedvoltage capability with up to 1.5A of load current. With a variety of output voltages

ch340s

Abstract: MARKING JW SOT-23 marking 3U 3T 3C diode 3E 3G BAT54BDWD1PT BA5 marking BA6 marking transistor marking lv4 ch740h40 kl3 59 MF sot-23
Contextual Info: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS PLASTIC MATERIAL USED CARRIES UL 94V-0 TYPE Maximum Maximum Maximum Maximum Reverse Peak Average Forward Peak Current Reverse Rectified Surge Current Marking @ 25°C TA Voltage Current @ 1S IO IFM Surge IR

1ss293

Contextual Info: 1SS293 TOSHIBA Diode Silicon Epitaxial Schottoky Barrier Type 1SS293 Low Voltage High Speed Switching Unit in mm Low forward voltage : VF 3 = 0.54V (typ.) Low reverse surrent : IR = 5µA (max) Small package Maximum Ratings (Ta = 25°°C) Characteristic Symbol