IR 240 FET Search Results

MGF4919G

Abstract: MGF4919 mgf1903b MGF0907B 14512H mgf4316g MGFC45V2527 MGF1923 MGFC38V3642 MGF0904A
Contextual Info: lid GaAs FETs •GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS <Ta = 25-c> PT If f -6 mA ¡¡m i 100 360 < (GHe) ' (mA) f t 3 10 NFmin max (dB) Qs min (dB! 11 4 1.4 4 1.0 12 2.0 i I MGF1302 Vf l P -6 -6 -6 80 240 3 10 MGF1323 -6 -6 80 240 3 10

IRL3103

Abstract: IRL3103D1
Contextual Info: PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS on = 0.014Ω

IRL3103

Abstract: IRL3103D1
Contextual Info: PD 9.1608C IRL3103D1 FETKYTM MOSFET & SCHOTTKY RECTIFIER l l l l l Copackaged HEXFET Power MOSFET and Schottky Diode Generation 5 Technology Logic Level Gate Drive Minimize Circuit Inductance Ideal For Synchronous Regulator Application D VDSS = 30V RDS on = 0.014Ω

G3VM-401A

Abstract: G3VM-61G1 G3VM-41LR G3VM-21LR11 355CR g3vm-401d RB070M-30 TR G3VM-S5 G3VM-21GR G3VM-21LR
Contextual Info: MOS FET Relays G3VM Series Wide Range of Contact Forms, Sizes and Package Types • Controls load voltages up to 600 V. • Terminal packages include PCB through-hole, SMT gullwing, SOP, and SSOP. • Low ON-resistance, low output capacitance, current limiting, and high dielectric 5000 VAC models available.

IR5040

Abstract: induction heating Circuit
Contextual Info: MOSFET MODULE P2H7M441L / P2H7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

induction heating Circuit

Contextual Info: MOSFET MODULE PD7M441L / PD7M440L Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Cascaded Circuit * Low On-Resistance and Switching Dissipation TYPICAL APPLICATIONS Circuit * Power Supply for the Communications and the Induction Heating

Contextual Info: P D -9.1648 International ÏQ R Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low VF Schottky Rectifier Generation V Technology Micro8 Footprint a or 33 K a err HP K

DIODE F7 SMD

Abstract: smd diode schottky code marking 2F Diode smd code sm
Contextual Info: P D -9 .1 6 4 8 International IQR Rectifier IRF7524D1 PRELIMINARY FETKY MOSFET and Schottky Diode Co-packaged HEXFET Power MOSFET and Schottky Diode P-Channel HEXFET Low Vp Schottky Rectifier Generation V Technology Micro8 Footprint VDSS = -20V RDS on = 0 .2 7 Q

Contextual Info: MOSFET MODULE P2H7M441H / P2H7M440H Dual 50A 450V/500V OUTLINE DRAWING FEATURES Dimension mm * Dual MOS FETs Separated Circuit * Prevented Body Diodes of MOSFETs by SBDs, and Ultra Fast Recovery Diodes Connected in Parallel Circuit * 300KHz High Speed Switching Possible

a2211

Contextual Info: 2 S K 1 5 4 -0 1 L FUJI POWER MOS-FET . S N-;HANNEL SILICON POWER MOS-FET _ „ - F-II SERIES • Features ■ Outline Drawings • High speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage

G3VM-401B

Abstract: G3VM-401E G3VM-4N
Contextual Info: MOS FET Relays G3VM-401B/E New Series of Analog-switching MOS FET Relays with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation • Switches minute analog signals. • Leakage current of 1 mA max. when output relay is open. • Upgraded G3VM-4N Series.

A240D

Abstract: G3VM-401BY G3VM-401EY 401by
Contextual Info: MOS FET Relays G3VM-401BY/EY Analog-switching MOS FET Relay with Dielectric Strength of 5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Leakage current of 1 mA max. when output relay is open. • Application Examples • Electronic automatic exchange systems

3 phase inverter 180 degree conduction mode wave

Abstract: fx4054 FX4053 NMHR ETD49 12v 2K3906 h bridge irf740 inverter using irfz44 12v center tap transformer fx4054 core
Contextual Info: APPLICATION NOTE 960A A 250 Watt Current-Controlled SMPS With Synchronous Rectification H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs by Ft. Pearce, D. Grant Introduction This application note illustrates ways in w hich In te rn a tio n a l R ectifier’s

vds3v

Abstract: 2SK274 2SK276
Contextual Info: 'M l- Ç fflG a A s A - * tt i i II ft ft * # M G F 13 0 5 3 V I d s s (mA) 13.00 30.00 45. 00 f f l ü : SHF Î Î ? S i Vg so (V) gm(mS) 25.00 tf jg : N f t ? * y S 7 l ' + ^ ' j r y - I d ( üA) G sl(d B )* 13.00 F GaAs FET. • ÌS^IetÌb!£o ifiiüf^o

EM 257

Contextual Info: a A s - » iS Ä * Ê fê B *M G F 1 9 0 2 EK S Ä : SHF %mo íü fjs ' N -V iV i/ •■/h + ' s U 7 "ir— H GaAs FET. #ä : g»o ä « 4 o F19 03 : SHF S i a : N f + i J l / i ^ a -y 1- GaAs FET. m : « í g » o iä fflfo • MG F 4 3 0 1 A W É : SHF ^ I g M ^ ü f S f f io

G3VM-401H

Contextual Info: MOS FET Relays G3VM-401H Expanded Range of Analog-Switching MOS FET Relays with 400-V Load Voltage • New models with a 6-pin SOP package now included in 400-V load voltage series. • Continuous load current of 120 mA. • Dielectric strength of 1,500 Vrms between I/O.

PS7341A-1B

Abstract: PS7341AL-1B DIODE 1B
Contextual Info: PRELIMINARY DATA SHEET Ω LOW ON-STATE 6-PIN DIP, 20Ω PS7341A-1B RESISTANCE 100 pF LOW OUTPUT PS7341AL-1B CAPACITANCE 1-ch OPTICAL COUPLED MOS FET FEATURES DESCRIPTION • HIGH ISOLATION VOLTAGE BV = 3,750 Vr.m.s. The PS7341A-1B and PS7341AL-1B are solid state relays

G3VM-401B

Abstract: G3VM-401E
Contextual Info: MOS FET Relays G3VM-401B/E New Series of Analog-switching MOS FET Relays with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation. • Switches minute analog signals. • Leakage current of 1 µA max. when output relay is open. • Upgraded G3VM-4N Series.

G3VM-351B

Abstract: G3VM-351E 351b
Contextual Info: MOS FET Relays G3VM-351B/E MOS FET Relay Series with 350-V Load Voltage • Upgraded G3VM-3 Series. • Continuous load current of 120 mA. • Dielectric strength of 2,500 Vrms between I/O. • Operating time of 0.3 ms typical . • RoHS Compliant. • Application Examples

G3VM-401H

Contextual Info: MOS FET Relays G3VM-401H Analog-Switching MOS FET Relays with 400-V Load Voltage • New models with a 6-pin SOP package in a 400-V load voltage series. • Continuous load current of 120 mA. • Dielectric strength of 1,500 Vrms between I/O. • RoHS Compliant.

G3VM-401B

Abstract: 401b 401e G3VM-401E
Contextual Info: MOS FET Relays G3VM-401B/E Analog-switching MOS FET Relays with Dielectric Strength of 2.5 kVAC between I/O Using Optical Isolation • Switches minute analog signals. • Leakage current of 1 A max. 0.8 nA typ. when relay is open. • Upgraded G3VM-4N Series.

G3VM-353H

Contextual Info: MOS FET Relays G3VM-353H/H1 Analog-switching MOS FET Relay with SPST-NC Double-pole, Single-throw, Normally Closed Contacts General-purpose Series Added • New models with SPST-NC contacts and a 6-pin SOP package now included in 350-V load voltage series.

G3VM-351E

Abstract: g3vm-351B
Contextual Info: MOS FET Relays G3VM-351B/E New Series with 350-V Load Voltage • Upgraded G3VM-3 Series. • Continuous load current of 120 mA • Dielectric strength of 2,500 Vrms between I/O. • Operating time of 0.3 ms typical . • Application Examples • Measurement devices

Contextual Info: 2 SK 1 0 1 1-01 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - I I • Features S E R I E S lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage •V Gs s = ± 3 0 V Guarantee