IPP06 Search Results

065N06L

Abstract: IPB063N06L IPP063N06L PG-TO263-3-2 th58 D53A
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

IPP065N06L

Abstract: d80 DIODE PG-TO220-3 IPP063N06L 065N06L IPB063N06L IPP065N06LG
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features V DS 60 V • For fast switching converters and sync. rectification R DS on ,max 6.5 m: • N-channel enhancement - logic level ID 80 A • 175 °C operating temperature • Avalanche rated

J 6920 A

Abstract: J 6920 06CN10N IPP06CN10N JESD22 PG-TO220-3
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

06CNE8N

Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features V DS 85 V • N-channel, normal level R DS on ,max (TO263) 6.2 m: ID 100 A • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature

IEC61249-2-21

Abstract: IPP06CNE8N JESD22 PG-TO220-3
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

065N04N

Abstract: IPP065N04N JESD22 PG-TO220-3 J-STD-20
Contextual Info: Type IPP065N04N G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 6.5 mΩ ID 50 A 1) • Qualified according to JEDEC for target applications • N-channel, normal level

065N06L

Abstract: IEC61249-2-21 IPB063N06L IPP063N06L PG-TO263-3-2 d80 DIODE
Contextual Info: IPB065N06L G OptiMOS Power-Transistor IPP065N06L G Product Summary Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level V DS 60 V R DS on ,max 6.5 mΩ ID 80 A • 175 °C operating temperature • Avalanche rated

06cn10n

Abstract: J 6920 A J 6920 mJ 6920 IPP06CN10N JESD22 PG-TO220-3 IPP06CN10NG
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

06CN10L

Abstract: JESD22 PG-TO220-3
Contextual Info: IPP06CN10L G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, logic level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max 6.2 mΩ ID 100 A • Very low on-resistance R DS(on) • 175 °C operating temperature

marking 9D

Abstract: sd marking 8H IPP06CN10N PG-TO220-3 A6c DIODE
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G "%&$!"# 2 Power-Transistor Product Summary Features R 492 ?6= ?@ C>2 =6G6= R I46=6?E82 E6 492 C86 IR ;I"\[# AC@ 5F4E! '  V ;I )( K R  - @ ?>2 I.)     .&* Z" I; )( 7 R/ 6CJ =@ H @ ? C6D:DE 2 ?46 R ;I"\[#

06n03la

Abstract: IPB06N03LA Q67042-S4146 IPP06N03LA 06N03L
Contextual Info: Preliminary data OptiMOSâ 2 Power-Transistor IPI06N03LA IPP06N03LA,IPB06N03LA Product Summary Feature Ideal for high-frequency dc/dc converters  N-Channel  Logic Level  Excellent Gate Charge x RDS on product (FOM)  Very low on-resistance RDS(on) P- TO262 -3-1

06cn10n

Abstract: 06cn10 DIODE D180 06CN IPI06CN10NG DIODE D100 to220
Contextual Info: IPB06CN10N G IPI06CN10N G IPP06CN10N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 100 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

DA QG

Contextual Info: IPB065N06L G IPP065N06L G "%&$!"# Power-Transistor Product Summary Features P ? A61BCBF9 C 3 89>7 3 ? >E5AC 5AB 1>4 BH>3 A53 C 969 3 1C 9? > P 3 81>>5<5>81>3 5=5>C <? 79 3 <5E5< V 9H .( J R  , ? >=1G .&- Y" I9 0( 6 P   S ? @5A1C 9>7 C 5=@5A1C

060N06N

Abstract: IPP060N06N NC45A Ipp060n06
Contextual Info: Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications

06N03LA

Abstract: IPB06N03LA IPI06N03LA IPP06N03LA
Contextual Info: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)

IPP06CNE8N

Abstract: JESD22 PG-TO220-3
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

06N03LA

Abstract: IPI06N03LA 06N03LA equivalent IPP06N03LA JESD22
Contextual Info: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

Contextual Info: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features V DS 25 V • Ideal for high-frequency dc/dc converters R DS on ,max 6.2 m: ID 50 A • Qualified according to JEDEC1) for target applications • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

060N06N

Abstract: IPP060N06N
Contextual Info: Type IPP060N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 6.0 mW • Superior thermal resistance ID 45 A • N-channel 1) • Qualified according to JEDEC for target applications

06CNE8N

Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

Contextual Info: IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max 6.2 mΩ ID 50 A • N-channel - Logic level • Excellent gate charge x R DS(on) product (FOM)

IPP06CNE8N

Abstract: JESD22 PG-TO220-3 06CNE8N
Contextual Info: IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 85 V R DS(on),max (TO263) 6.2 mΩ ID 100 A • Very low on-resistance R DS(on)

062NE7N

Abstract: DIN 867 IPP062NE7N3 JESD22 PG-TO220-3
Contextual Info: IPP062NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 6.2 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)

06n03la

Abstract: 06n03la datasheet, download SMD MARKING CODE transistor IPB06N03LA IPI06N03LA IPP06N03LA IPP06 59-MID 06N03L 06n03
Contextual Info: IPB06N03LA IPI06N03LA, IPP06N03LA OptiMOS 2 Power-Transistor Product Summary Features • Ideal for high-frequency dc/dc converters • N-channel V DS 25 V R DS on ,max (SMD version) 5.9 mΩ ID 50 A • Logic level • Excellent gate charge x R DS(on) product (FOM)