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    062NE7N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPP062NE7N3GXKSA1

    Power Field-Effect Transistor, 80A I(D), 75V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Rochester Electronics IPP062NE7N3GXKSA1 21,076 1
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    Vyrian IPP062NE7N3GXKSA1 11,429
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    062NE7N Datasheets Context Search

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    062NE7N

    Abstract: DIN 867 IPP062NE7N3 JESD22 PG-TO220-3
    Contextual Info: 062NE7N3 G OptiMOSTM3 Power-Transistor Product Summary Features • Optimized technology for synchronous rectification • Ideal for high frequency switching and DC/DC converters V DS 75 V R DS on ,max 6.2 mΩ ID 80 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipp062ne7n3pg-to220-3062ne7ndin 867+1jesd22 PDF