IP TRANSISTOR Search Results

Contextual Info: T IP I30, T IP I31, T IP I32 T IP I35, T IP I36, T IP I37 TIP130,131, 132 TIP135,136, 137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15

Contextual Info: pS mm Aperture Package Schematic Emitter Sensor DUAL CHANNEL SLOTTED T111N 1T Ll 'DI VDKTLT1 PITLi 'P K aC VW Ti lTl fvTlTl H21A3 Typ. T‘ o f f H21A2 Typ. W Ton <Tf * Ip = 5mA Ip = 20mA Ip = 30mA v cc = 5V, \ K)R= Ip = 1mA Ip = 30mA Ip = 1mA Ip = 30mA 60

Contextual Info: T IP I20, TIP121, TIP122 T IP I25, T IP I26, T IP I27 TIP120, 121,122 TIP125,126,127 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications OIM A B C E F G H J K L M N MIN MAX 16,51 10.67 4,83 0.90

Contextual Info: T IP 102 T IP 1 0 5 T IP 1 0 7 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS • STMicroelectronics PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEARAND SWITCHING INDUSTRIAL

BF120

Contextual Info: TIP41F; 41AF TIP41BF; 41 CF PHILIPS INTERNATIONAL 5bE J> • 711002b 004352b TOS M P H I N T~33 ~ 0 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon epitaxial power transistors, each in a SO T186 envelope w ith an electrically insulated mounting base. PNP complements are T IP 4 2 F , T IP 4 2 A F , T IP 42B F and T IP 42C F.

T1P112

Contextual Info: b2 TE XA S IN ST R -COPTO} DE? ûlfcilTEb DG3bflfl2 t. 89 61726 TEXAS INSTR <OPTO) 62C 36882 TIPT10, TIP111, TIP112 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS REVISED OCTOBER 1984 Designed for Complementary Use With T IP 115, T IP 116, T IP 117

Contextual Info: T IP 1 1 5 T IP 1 1 6 J _ T IP 1 1 7 V . SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. N-P-N complements are

TIP137

Abstract: tip137 dlt TIP130 TIP131 TIP135
Contextual Info: TIP130, TIP131, TIPI 32 T IP I35, T IP I36, T IP I37 TIP130,131,132 TIP135,136,137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications _ 3 DIM A B C D e: F G H J K L M N MIN MAX 16,51 10.67 4.83 0.90 1.15

Contextual Info: TIP41F; 41AF TIP41BF; 41CF SILICON EPITAXIAL POWER TRAN SISTO RS N PN silicon epitaxial power transistors, each in a S O T 186 envelope with an electrically insulated mounting base. PN P complements are T IP 4 2 F , T IP 4 2 A F , T IP 4 2 B F and T IP42C F.

TIPI02

Abstract: tip1 33T4 DDD1172 TIP100 TIP105
Contextual Info: HL TIPI 00, TIPI 01, T IP I02 TIPI 05, T IP I06, T IP I07 TIP100,101,102 TIP105, 106, 107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications 0IM A B C D E F H J K L M N MIN MAX 16.51 10,67 4.83

NT 407 F TRANSISTOR

Abstract: NT 407 F MOSFET TRANSISTOR
Contextual Info: SK 260MB10 MOSFET,TRANSISTOR Absolute Maximum Ratings Symbol Conditions MOSFET N<AA NQAA S< S<F ?- L MJ K$G 407,- %*8,23.-, -', .6.,+ ?- L MJ ;IP> K$T O> *' W O &-T ?- L MJ ;IP> K$T O> ?Z Inverse diode SEMITOP 3 Mosfet Module S^ L [ S< S^F L [ S<F ?- L MJ ;IP> K$T

ER20A

Abstract: per20
Contextual Info: VIPer20/SP/DIP VIPer20A/ASP/ADIP SMPS PRIMARY I.C. PR ELIM IN ARY DATA * TYPE V dss In V IP e r 2 0 /S P /D IP 620V 0 .5 A RüS(on) 16 V IP e r 2 0 A /A S P /A D IP 700V 0 .5 A 18 a a (*) Target data for VIPer20A/ASP/ADIP FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP

600 watt smps schematic viper50A

Abstract: VIPER50 application note VIPer50 1000 watt mosfet power amplifier 500 watt smps schematic 600 watt smps schematic circuit diagram of 4000 watt smps full bridge viper 224 VIPer 50A Per50
Contextual Info: V IP e r 5 0 /S P V IP e r 5 0 A /A S P SM PS PRIMARY I.C. PRELIM IN ARY DATA TYPE V dss In R DS o n V IP e r5 0 /S P 620V 1.5 A 5 Cl V IP e r5 0 A /A S P (*) 70 0V 1.5 A 5. 7 a (*) T a rg e t d a ta fo r V IP o w e r5 0 A /A S P FEATURE . ADJUSTABLE SWITCHING FREQUENCY UP

2N5758

Abstract: 2N5760
Contextual Info: TYPES 2N5758, 2N5759. 2N5760 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FOR PO W ER -AM PLIFIER A N D HIG H-SPEED-SW ITCHING A PPLICATIO N S R EC O M M EN D ED FOR C O M P LE M E N TA R Y USE W IT H T IP 544, T IP 545, T IP 546 • 05 H C < r "o r* m

transistor tip 109

Abstract: j1n transistor bd 109 transistor TIP30 transistor riP30 bd 125 equivalent TEXAS INSTRUMENTS TIP29 Texas Instruments TIP30C Transistor tip29 TIP308
Contextual Info: TYPES TIP30. TIP30A, TIP30B. TIP30C P-N P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS FOR POWER A M P L IF IE R A N D H IG H -S P EE D -S W ITC H IN G A P PLIC A TIO N S D ESIG NED FOR C O M P L E M E N T A R Y USE W ITH T IP 29, T IP 2 9 A , T IP 29B , TIP29C

TIP 41 transistor

Abstract: tip 147 TRANSISTOR equivalent TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 35c transistor BD 141 transistor tip 5530 transistor tip35c TIP 122 transistor APPLICATION NOTES TRANSISTOR bd 147
Contextual Info: T Y P E S TIP 36, TIP36A, TIP36B, TIP36C P-N-P SINGLE-DIFFUSED M ESA SILICO N POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 3 5 , T IP 3 5 A , T IP 3 5 B , T IP 3 5 C

Contextual Info: T IP 1 1 0 TIP111 T IP 1 1 2 _ J V SILICON DARLINGTON POWER TRANSISTORS N-P-N epitaxial-base transistors in monolithic Darlington circuit for audio output stages and general purpose amplifier and switching applications. TO-220AB plastic envelope. P-N-P complements are

Contextual Info: V IP e r 1 0 0 /S P V IP e r 1 0 0 A /A S P SM PS PRIM ARY I.C. P R E LIM IN A R Y D ATA * TYPE V dss In RüS(on) V IP e r l 00 /S P 620V 3 A 2 .5 Q. V IP e r l 0 0 A /A S P (*) 70 0V 3 A 2 .8 Q. m (*) Target data for VIPei"IOOA/ASP PENTAWATT HV FEATURE

Contextual Info: r Z ^ 7 7 # S G S - T H O [ïfflo e œ M S O N V IP e r 5 0 /S P iL ie r a « ® V IP e r 5 0 A /A S P SMPS PRIMARY I.C. AD VA N C E DATA TYPE V dss In RDS on V IP e r5 0 /S P 600V 1.5 A 5 Q. V IP e r5 0 A /A S P (*) 670V 1.5 A 6 .6 Q. (*) In developm ent

Contextual Info: rZ 7 Ä T# S G S -T H O M S O N iM O ig œ iiL iiera *® V IP e r5 0 /S P V IP e r5 0 A /A S P SMPS PRIMARY I.C. P R E L IM IN A R Y D A T A TYPE V dss In RDS on V IP er50/S P 620V 1.5 A 5 Q. V IP er50A /A S P (*) 700V 1.5 A 5.7 Q. (*) Target data for VIPower50A/ASP

TIP42C EQUIVALENT

Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Contextual Info: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C

transistor 6b6

Abstract: PT651
Contextual Info: ISOCOM LTD I Optolink OPTOCOUPLERS EMITTER / DETECTOR PAIRS Transistor Output Part Number Features PT650 A Infrared Emitting Diode PT651 A Photo Transistor tr ic c°n Ip » 20mA V c e = 10V MIN CmA) tf VcESat Ip = 20mA Ic = 1m A M AX V) Ver. -sv. ir. «imA. Ri =ioon

MPQ3906

Contextual Info: MOTOROLA Order this document by MPQ3906/D SEMICONDUCTOR TECHNICAL DATA Quad Am plifier Switching Transistor MPQ3906 PNP Silicon Motorola Preferred Device [ijfl [ip [ip nil fiol ITI ITI LySJ LrvJ PNP .r y i , x i LÌ! l i i l i l Lil l i l t i l l i i MAXIMUM RATINGS

npn pnp transistor bipolar cross reference

Abstract: PN diode pnp low power fast switching transistor high voltage fast switching npn transistor npn, transistor, sc 109 C Field Effect Transistor pnp pn junction diode Solitron Devices pnp, 200 V, 20A
Contextual Info: sjfnlitrnn_ a tm , C H IP D E S C R IP T IO N & P E R F O R M A N C E C U R V E S Devices. Inc. Chip Type Index. .l