IODES Search Results

phototransistor smd

Contextual Info: SMD In fra re d E m ittin g D iodes . Electrical/O ptical Data Shape P art No. Material Emitted C olor Lens Y! Peak Wave Length (nm) I a lf=20mA Po=(mW/sr) lf=20mA *50mA Typ. Max. Min. Typ. “A ngle 9 I Figure 201/2 2.0x1.25x1.1mm (0805) ✓ ZTNI54W

Contextual Info: Control D iodes Alpha offers PIN iodes with a wide range of electrical characteristics in a variety of package styles designed to meet the need of today’s commercial and military circuitry. Package styles include hermetic glass axial leaded types for both low and high power

IN1183

Abstract: IOR 5250 IN1190 1N1183 1N1183A 1N2128A 1N3765 PD-2087 N1190 1N1133
Contextual Info: Data Sheet No. PD-2.087 INTERNATIONAL RECTIFIER llORl 1N11S3, 1N3765, 1N1183A, 1N2128A SERIES 3 5 , 4 0 and 6 0 A m p P o w e r Silicon R e c tifie r D iodes Description and Features Major Ratings and Characteristics ' f îA V i 1N 1183 1N3765 1N 1183A 35*

9c1 zener diode

Abstract: H 48 zener diode 1N4895A DIODE BJE 1N4890 1N4890A 1N4891 1N4895 RH4895A diode BY 127
Contextual Info: M ierosemi Corp. The O'oae experts SANTA A NA, CA i SCOTTSDALE, A Z F o r more information cali: 602 941-6300 DESCRIPTION T his series of M icrosem i 400m W U ltra -S ta b le R eference D iodes offers a C E R T IF IE D R E F E R E N C E VOLTAGE S T A B IL IT Y as m ea su re d over

1N5225

Abstract: 1N5262-1 1N5226 1N5227 1N5228 1N5229 1N5230 1N5231 1N5232 1N5262
Contextual Info: 1N5225 THRU 1N5262 SILICON PLANAR ZENER IODES Silicon Planar Zener D iodes S ta n d a rd Z e n e r v o lta g e to le ra n ce is ± 2 0 % . A d d suffix “ A ” for ± 1 0 % to le ra n ce and suffix “ B ” for ± 5 % tolerance. O th e r to le ra nce s, non standard and h igher Z e n e r v o ltag e s

66R2S

Abstract: 30R2S Diodes de redressement byw 68 26R2S BYW 200 r2 137 C2501 C5001 REDRESSEMENT
Contextual Info: DO 4 C B 33 C ontrolled avalanche silicon rectifier iodes D iodes de redressement au s ilic iu m à avalanche con trô lé e T (vj» Type Case (°C I ' fsm (A i IO (A l Vf / if (V) (A) IR ! V RRM <mA) V (BR> (VI I p 0,5 mA DRT 25 °C 76 max min Page 25 OC

BZX84

Abstract: c3v9 BZY88 CODE W4 BZY88 equivalent zener BZY88 equivalent C7V6 zener diode bzy88 C18-C20 c5v1
Contextual Info: i semiconductors FERRANTI BZX84 Series C2V7 to C47 J Silicon V o lta g e R egulator D iodes DESCRIPTION Silicon voltage regulator iodes designed fo r voltage reference and stabilizer applications. The series consists o f 31 types w ith nominal zener voltages ranging from 2 -7 V to 47V w ith a ± 5 % tolerance.

HSCH9201

Contextual Info: What HEW LETT* miltm PACKARD GaAs Beam Lead Schottky Barrier D iodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features HSCH-9101 • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency

Contextual Info: Panasonic S chottky B arrier D iodes SBD MA2D760A Silicon epitaxial planer type Unit : mm For switching power supply I Features T O -220D p ack ag e I f (AV)= 5 A rectification p o ssib le V r = 100V guaranteed S in g le type Absolute Maximum Ratings (Ta=25°C)

Contextual Info: $ 4 # — K /D iodes IN S e rie s • JEDEC 1N Series 1 -K Switching iodes JEDEC Standards • [2/Dimensions Unit : mm JED EC « fè&LLZ, £<7>1N v ' J - X f c t l i t l , T Î S ^ Î - Î '< 7 ) T '^ W < tc è^ \ 1N Series conforming to JEDEC Standards are also available so that

Contextual Info: R e ctifie r D iodes 3 Phase Bridge Diode M odules Absolute Maximum Ratings Part No. lo V rm Conditions If s m Electrical Characteristics Tstg |R ejc max Conditions (max) (max) IF V r= V rm [V] [A] [ mA ] Vf Tj Tc [V] S10VT60 600 80 800 S10VTA60 600 80 800

B0014

Contextual Info: COAICHII’ Small Signal Switching iodes SMQ D iodes S p o c ia lls t CDST7000-G Reverse Voltage: 100 Volts Forward Current: 200mA RoHS Device Features S O T -23 D esig n ed fo r m ounting on sm all s u rfa c e . High sp eed sw itching. !l1 0 Z 8 0 High m ounting c ap ability, strong surge

Contextual Info: ^ RB451F — K/D iodes RB451F y IJ =l > I k°2 * v 7 M $ '> a "J V + - / * U 7 $ < * ~ K Silicon Epitaxial Schottky Barrier Diode • W K ifiilS I/D im e n s io n s U n it: mm 1) 5 - C - A b 2) / h M T '* 3 „ 3) 9 r^ ](o $ § j z C &-5 o 1) M in im old type

MA4882

Abstract: MA4853
Contextual Info: M an A M P com pany Axial Lead Glass Packaged Schottky Mixer iodes Features Case Style 54 • • • • See appendix for complete dimensions High Reliability Screening to Jantxv Level Available Low and M edium Barrier D iodes Available Low Noise Figure T hrough 10 GHz

Contextual Info: • 4 4 4 7 5 A 4 □□□'17313 S I T HEW LETT-PACKARD/ ■H P A C MP NT S W fw% H E W L E T T b lE D PACKARD PIN D iodes for F ast S w itch in g and A tten u atin g Technical Data 5082-3305 5082-3306 Features 1 32 0 5 2 f2 3 fi5 3 § l • Nanosecond Sw itching

ECG5296A

Abstract: ECG5063A ECG5130A ECG140A ECG5005A ECG5118A ecg5161a ECG5137 ECG145A ECG5204A
Contextual Info: PHILIPS E C G INC Note: Zener D iodes Voltage V for Tolerance 2.4 2.5 2.7 2.8 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.0 6.2 6.8 7.5 8.2 8.7 9.1 10.0 11.0 11.5 12.0 13.0 14.0 15.0 16.0 17.0 18.0 19.0 10 watt and 50 watt Zeners listed have anode connected to stud. Add suffix

TBA 900

Abstract: CY120 CY103 BKC Semiconductors Scans-0014814
Contextual Info: S D chottky iodes III» Small Signal Schottky iodes Type Peak Inverse Voltage MIN. (PIV) (VF) @ 1mA (VF) 15mA Volts Volts Volts ma @vR Volts 0.41 0.41 0.41 0.40 0.39 1.0 1.0 1.0 0.95 0.90 0.2 0.2 0.2 0.2 0.2 50 50 50 40 30 Maximum Forward Voltage Drop

SDL-3060-001

Abstract: SDL LASER Laser SDL SDL-6032 SDL-3030 SDL-3060 SDL6032 SDL3030 Laser SDL 20 SDL-3034-101
Contextual Info: SANYO SEMI CON DUCTOR CORP 32E í 7 ^ 7 0 7 ^ 0000471 5 Laser Diode —K L a s e r D iodes Absolut« ì M a xim u m Rí tin g s m m « T yp e No. ïvw m Ä 'ÿtlii't} Features L ig h t O u tp u t K fftS ffliS O p e ra tin g Temperature Po Topr Po Ith lo p

RLS-71

Abstract: RLS-72 "TE-11" ROHM RLS-73 LL-34 diodes color yellow
Contextual Info: ROHM CO LT» 4DE D ? & E & m $ 'f ^ — K/D iodes 0001,4^3 L S O R H i l RLS-71 /RLS-72/RLS-73 — R D - 7 1 / ^ L S - 7 2 / ^ L S — - 7 " 7 T £ > 3 -ö 9 3 Silicon Epitaxial Planar H igh-Speed Switching Leadless iodes W fi\ t " 5£ 0 /D im e n s io n s U nit : mm

Contextual Info: Afa M an AM P com pany Schottky Barrier Beam Lead and Packaged Bridge Quads MA4E400 Series V3.00 Features Case Styles • • • • Small Physical Size for Microstrip Mounting High Reliability Closely Matched Junctions for High Isolation Low, Medium and High Barrier D iodes Available

nfr 25m

Abstract: PC100F2 diode 931 p 7 BB351 ITT DIODE 210
Contextual Info: FAST RECOVERY DIODE MODULE 100A/200V/trr:90nsec PC100F2 FEATURES O Iso la te d B ase o D ual D iodes - C athode Com m on :PC100F2 20 0791 & O S uper F a st R ecovery o H igh S urge C apability -4 4 (1 7 3 . i . ,0';95 |. 8 2(323» -« 1 41.5(1.63)

TRF 530

Abstract: 317 lz K122 ST Low Forward Voltage Schottky Diode 2G21 FCQ10A03L TEG 105
Contextual Info: SCHOTTKY BARRIER DIODE 10A/30V fcqioao3l 3. K . 122 FEATURES MAX o S im ila r to T 0 -2 2 0 A B C ase 'MAXi 10. 3 .4051 3. 4( . 1M )„ . MAX "I/ Ä H « A ~W O F u lly M olded Iso latio n o E x tre m e ly L ow F o rw a rd V o ltag e D rop o D u a l D iodes—C athode C om m on

TC65T

Abstract: TLM 431 KCQ60A04 diode schottky 4T
Contextual Info: SCHOTTKY BARRIER DIODE 60A/40V KCQ60A04 FEA TU RES 5.31.209 4.7U35) o S im ila r to T O -247A C T O -3P ) Case o D u a l D iodes-C athode Com m on o Low F o rw a rd V o ltag e D rop o L o w P o w er L oss, H igh E fficiency O H igh S u rg e C apability 3 .2 (126)- t

FCH20A06

Abstract: mnaf
Contextual Info: SCHOTTKY BARRIER DIODE FCH20A06 20A / 60V FEATU RES o T 0 -2 2 0 A B F ully M olded ODual D iodes - Cathode Com m on O Low F orw ard V o lta g e Drop O H igh Su rg e C apability o T j = 15 fC operation Approx. Net Weight : 1.75 Grams MAXIMUM RATINGS \ T y p e