INFINEON MARKING L5 Search Results

bcr405u

Contextual Info: BCR405U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

Contextual Info: BCR405U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

CSC74

Contextual Info: BCR405U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

bcr405u

Abstract: BCW66H SC74
Contextual Info: BCR405U LED Driver • Supplies stable bias current even at low battery voltage 4 3 5 • Ideal for stabilizing bias current of LEDs 2 6 1 • Negative temperature coefficient protects LEDs against thermal overload • Suitable for 12V automotive applications

bcr405u

Abstract: AN077 AN101 BC817SU BCX68-25 SC74 Transistor marking code K infineon laser led driver
Contextual Info: BCR405U LED Driver Features • LED drive current of 50mA • Output current adjustable up to 65mA with external resistor 4 3 5 • Supply voltage up to 40V 2 6 • Easy paralleling of drivers to increase current 1 • Low voltage overhead of 1.4V • High current accuracy at supply voltage variation

LM7805 M SMD

Abstract: LM7805 smd LM7805 footprint PG-RFP-10 RO4320 smd transistor marking C14 8 LM7805 smd transistor marking L5 LM7805 smd VOLTAGE REGULATOR elna 50v
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

Contextual Info: D a t a s h e e t , V 3 . 0 , O c t o b e r 2 00 8 B G F 10 8L 7 C h a n n el L C D F i l t er A r r a y w i t h E S D P r ot e c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-10-23 Published by Infineon Technologies AG 81726 München, Germany

BCR405U E6327

Contextual Info: BCR405U LED Driver 5 • Supplies stable bias current even at low battery 4 6 voltage • Ideal for stabilizing bias current of LEDs 3 • Negative temperature coefficient protects 2 LEDs against thermal overload 1 • Suitable for 12V automotive applications

JUMPER-0603

Abstract: CGB98-900 INFINEON PART MARKING infineon marking L2 MMIC marking 81 TSSOP10 CGB98 C4 MMIC siemens inductor 15PF-0603
Contextual Info: GaAs MMIC CGB 98 Preliminary Datasheet * 3-stage GaAs GSM-HBT Power Amplifier *Operating voltage range: 2.7 to 6.0 V * Single supply voltage * Pout = 34.0dBm at Vcc=3.2V

LM7805 M SMD

Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

LM7805 M SMD

Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

LM7805 smd 8 pin

Abstract: smd transistor marking l7 SMD package marking ab l16 LM7805 smd smd lm7805 transistor smd marking ND BCP56 LM7805 PTF080101M smd transistor marking C14
Contextual Info: PTF080101M High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz Description The PTF080101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in

N0737

Abstract: CT2200 IEC61000-4-22 BGF108L
Contextual Info: D a t a s h e e t , V 3 . 0 , O c t o b e r 2 00 8 B G F 10 8L 7 C h a n n el L C D F i l t er A r r a y w i t h E S D P r ot e c t i o n S m a l l S i g n a l D i s c r et e s Edition 2008-10-23 Published by Infineon Technologies AG 81726 München, Germany

LM7805 M SMD

Abstract: LM7805 smd C5 MARKING TRANSISTOR lm7805 datasheet future LM7805 smd 8 pin elna 50v transistor smd marking ND LM7805 PTF180101M TPSE106K050R0400
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

LM7805 smd

Abstract: LM7805 smd 8 pin LM7805 M SMD SMD TRANSISTOR MARKING l4 LM7805 smd transistor marking wa LM7805 05 lm7805 datasheet C17-R2 elna ds
Contextual Info: PTF180101M High Power RF LDMOS Field Effect Transistor 10 W, 1.0 – 2.0 GHz Description The PTF180101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 1 to 2 GHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small

Contextual Info: BCR405U LED Driver 5 • Supplies stable bias current even at low battery 4 6 voltage • Ideal for stabilizing bias current of LEDs 3 • Negative temperature coefficient protects 2 LEDs against thermal overload 1 • Suitable for 12V automotive applications

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

PTF210301E

Contextual Info: PTF210301E PTF210301F High Power RF LDMOS Field Effect Transistor 30 W, 2110 – 2170 MHz Description The PTF210301E and PTF210301F are 30-watt, internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest operation

Contextual Info: PTF180301E PTF180301F Thermally-Enhanced High Power RF LDMOS FETs 30 Watt, 1805 – 1880 MHz, 1930 – 1990 MHz Description The PTF180301E and PTF180301F are 30-watt, internally-matched GOLDMOS FETs intended for GSM EDGE and CDMA applications in the DCS/PCS band. Thermally-enhanced packaging provides the coolest

Motorola transistor smd marking codes

Abstract: UAF3000 BAR64 spice model parameter PMBFJ620 spice model bf1107 spice model RF LNB C band chipset PIN diode SPICE model BAP50 BSS83 spice model MPF102 spice model 2SK163 spice model
Contextual Info: RF manual 11th edition Application and design manual for RF products December 2008 www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

LM7805

Abstract: PTF141501E
Contextual Info: Preliminary PTF141501E PTF141501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1450 – 1500 MHz Description The PTF141501E and PTF141501F are thermally-enhanced 150-watt, GOLDMOS FETs intended for DAB applications. The devices are characterized for Digital Audio Broadcast operation in the 1450 to 1500 MHz

240101S

Contextual Info: PTF240101S Thermally-Enhanced High Power RF LDMOS FET 10 W, 2400 – 2700 MHz Description The PTF240101S is a 10-watt, internally-matched GOLDMOS FET device intended for CDMA 2000 applications in the 2.4 to 2.7 GHz band. Full gold metallization ensures excellent device lifetime and reliability.

BDS31314

Abstract: PTF210451E PTF210451F
Contextual Info: PTF210451E PTF210451F Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2110 – 2170 MHz Description The PTF210451E and PTF210451F are 45-watt internally-matched GOLDMOS FETs intended for WCDMA applications from 2110 to 2170 MHz. Thermally-enhanced packaging provides the coolest

Motorola transistor smd marking codes

Abstract: MARKING V14 SOT23-5 Motorola 622 J112 smd code marking wl sot23 smd code marking rf ft sot23 diode SMD WL sot23 Microwave GaAs FET catalogue BFG135 amplifier catv DISTRIBUTION NETWORK diagram BF256B spice model
Contextual Info: RF Manual 9th edition Application and design manual for RF products November 2006 date of release: November 2006 document order number: 9397 750 15817 Henk Roelofs,Vice President & General Manager RF Products Introduction We are excited to introduce the first issue of the RF Manual under our new