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    PTF210101M Search Results

    PTF210101M Datasheets (3)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    PTF210101M
    		Infineon Technologies 2100 MHz to 2200 MHz; Package: PG-RFP-10; Flange Type: Surface Mount; Matching: None; Frequency Band: 2,110.0 - 2,170.0 MHz; P1dB (typ): 10.0 W; Supply Voltage: 28.0 V; Original PDF 270.98KB 8
    PTF210101M V1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - IC FET RF LDMOS 10W TSSOP-10 Original PDF 271.06KB
    PTF210101MV1
    		Infineon Technologies RF FETs, Discrete Semiconductor Products, IC FET RF LDMOS 10W TSSOP-10 Original PDF 8
    SF Impression Pixel

    PTF210101M Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG PTF210101MV1

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian PTF210101MV1 11,720
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    PTF210101M Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin smd transistor marking l7 smd transistor marking C14 LM7805 smd smd transistor marking l6 transistor smd marking ND BCP56 LM7805 PTF210101M
    Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		ptf210101m10-wattpg-rfp-10lm7805 m smd+8lm7805 smd 8 pinsmd transistor marking l7smd transistor marking c14lm7805 smdsmd transistor marking l6transistor smd marking ndbcp56lm7805 PDF

    LM7805 M SMD

    Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
    Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in


    Original     		ptf210101m10-wattpg-rfp-10lm7805 m smd+9lm7805 smd 8 pinlm7805 smdsmd lm7805lm7805 05lm7805lm7805 footprintlm7805 datasheetp221emarking us capacitor pf l1 PDF