INFINEON MARKING L2 Search Results

infineon marking L2

Abstract: BFR193L3
Contextual Info: BFR193L3 NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz 2 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BFR193L3

Abstract: BFR380L3 marking FC
Contextual Info: BFR380L3 NPN Silicon RF Transistor* • High current capability and low figure for wide dynamic range application 3 1 • Low voltage operation 2 • Ideal for low phase noise oscillators up to 3.5 GHz • Low noise figure: 1.1 dB at 1.8 GHz * Short term description

BFR193L3

Abstract: BFR340L3 marking FA
Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

SMD MARKING CODE f2

Contextual Info: BGA231N7 Silicon Germanium GNSS Low Noise Amplifier Data Sheet Revision 1.0, 2013-01-29 RF & Protection Devices Edition 2013-01-29 Published by Infineon Technologies AG 81726 Munich, Germany 2013 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

V05 SMD CODE MARKING

Abstract: TSLP-7-4 BGA461 sMD .v05 smd V05 transistor SMD .v05 smd marking code v05 INFINEON marking BGA c4 smd marking code marking pon
Contextual Info: Preliminary Data Sheet, Rev.1.1, Jan. 2009 BGA461 Silicon Germanium GPS Low Noise Amplifier RF & Protection Devices Edition 2009-01-22 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2009. All Rights Reserved. Legal Disclaimer

BFR360L3

Abstract: BFR193L3
Contextual Info: BFR360L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • For low noise amplifiers 3 • For Oscillators up to 3.5 GHz and Pout > 10 dBm 1 2 • Low noise figure: 1.0 dB at 1.8 GHz *Short-term description ESD Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BGA825L6S Silicon Germanium Low Noise Amplifier for Global Navigation Satellite Systems GNSS Data Sheet Revision 2.1, 2012-10-17 RF & Protection Devices Edition 2012-10-17 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG

RCs INFINEON

Contextual Info: BFR193F NPN Silicon RF Transistor* • For low noise, high-gain amplifiers up to 2 GHz • For linear broadband amplifiers 2 3 1 • fT = 8 GHz, F = 1 dB at 900 MHz • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 * Short term description

bgm1032n7

Abstract: BGM1032 RF MODULE CIRCUIT DIAGRAM dect Texas Instruments GPS chip TSNP-7-10
Contextual Info: BGM1032N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.0, 2011-05-30 RF & Protection Devices Edition 2011-05-30 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

smd m781

Abstract: vbg1 marking BGM781 marking code vbg1 BGM781N11 infineon rf smd package TSNP-11 1710m
Contextual Info: Data Sheet, Rev.3.2, Oct. 2010 BGM781N11 GPS Front-End Module RF & Protection Devices Edition 2010-10-28 Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2010. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

BFR360T

Abstract: BCR108T E6327 SC75 TRANSISTOR MARKING NK infineon marking code L2 fbs MARKING TRANSISTOR transistor marking code 325
Contextual Info: BFR360T NPN Silicon RF Transistor 3 Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BGM1034N7

Abstract: GLONASS chip BGM1034 Texas Instruments GPS chip RF MODULE CIRCUIT DIAGRAM dect MIPI alliance RO4003C INFINEON package PART MARKING
Contextual Info: BGM1034N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.0, 2011-07-18 RF & Protection Devices Edition 2011-07-18 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

BCR108T

Abstract: BFR181T SC75
Contextual Info: BFR181T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

87757

Abstract: BFR181 BCW66
Contextual Info: BFR181 NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA 2 3 • fT = 8 GHz, F = 0.9 dB at 900 MHz 1 * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

transistor marking RHs

Abstract: transitor RF 98 BFR183F
Contextual Info: BFR183F NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at 2 3 collector currents from 2 mA to 30 mA 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BGM1033

Abstract: BGM1033N7 gps schematic diagram
Contextual Info: BGM1033N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.2, 2011-07-18 RF & Protection Devices Edition 2011-07-18 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

INFINEON package PART MARKING

Contextual Info: BGM1044N7 GPS and GLONASS Front-End Module Data Sheet Revision 3.0, 2012-03-27 RF & Protection Devices Edition 2012-03-27 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or

marking r4 SOT343

Abstract: bo 139 INFINEON marking BGA BGA420 BGA427 E6327 nf 948
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie 3
Cascadable 50 -gain block 4
Unconditionally stable
Gain |S21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 2 IP3out = +7 dBm at 1.8 GHz (VD =3V, ID =9.4mA) 1
Noise figure NF = 2.2 dB at 1.8 GHz

AURIX

Abstract: BGM1044N7 BGM1044 RO4003C
Contextual Info: BGM1044N7 GPS and GLONASS Front-End Module Data Sheet Revision 2.0, 2012-02-21 Preliminary RF & Protection Devices Edition 2012-02-21 Published by Infineon Technologies AG 81726 Munich, Germany 2012 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

BCR108T

Abstract: BFR183T SC75
Contextual Info: BFR183T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BCR108T

Abstract: BFR182T SC75
Contextual Info: BFR182T NPN Silicon RF Transistor* • For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA 2 3 1 • fT = 8 GHz, F = 0.9 dB at 900 MHz * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!

BGM1043

Abstract: BGM1043N7 infineon marking L2
Contextual Info: BGM1043N7 GPS and GLONASS Front-End Module Target Data Sheet Revision 1.0, 2011-11-04 RF & Protection Devices Edition 2011-11-04 Published by Infineon Technologies AG 81726 Munich, Germany 2011 Infineon Technologies AG All Rights Reserved. Legal Disclaimer

marking r4 SOT343

Abstract: marking bms
Contextual Info: BGA427 Si-MMIC-Amplifier in SIEGET 25-Technologie • Cascadable 50 Ω-gain block 3 • Unconditionally stable • 2 4 Gain |S 21|2 = 18.5 dB at 1.8 GHz Appl.1 gain |S21|2 = 22 dB at 1.8 GHz (Appl.2) 1 IP 3out = +7 dBm at 1.8 GHz (V D=3V, I D=9.4mA)

LM7805 M SMD

Abstract: LM7805 smd 8 pin LM7805 smd smd lm7805 LM7805 05 LM7805 LM7805 footprint lm7805 datasheet P221E marking us capacitor pf l1
Contextual Info: PTF210101M High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz Description The PTF210101M is an unmatched 10-watt GOLDMOS FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in