ILD10 Search Results

ILD10 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
ILD1-004		Siemens	SURFACE MOUNT LEAD BEND OPTIONS	Scan	PDF	33.58KB	1
ILD1-009		Siemens	SURFACE MOUNT LEAD BEND OPTIONS	Scan	PDF	33.58KB	1

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PCE Instruments PCE-ILD-10 INFRARED THERMOMETER PCE-ILD 10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	PCE-ILD-10		2		1	1 $142.90 10 $142.90 100 $142.90 1000 $142.90 10000 $142.90	Buy Now
	PCE-ILD-10				1	1 $171.00 10 $171.00 100 $171.00 1000 $171.00 10000 $171.00	Buy Now
Iluminar Lighting IL-D10 DIMMING CABLE 10FT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IL-D10	Bulk			1	1 $11.53 10 $11.53 100 $11.53 1000 $11.53 10000 $11.53	Buy Now
Belden Inc SPECIAL BUILD 1003397 2C22 Special Build Belden Rg6 Wire With 2C18 And 2C22 \|Belden SPECIAL BUILD 1003397 2C22
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	SPECIAL BUILD 1003397 2C22	SPOOL			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
JAE Electronics IL-D-10S-S3TA2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IL-D-10S-S3TA2		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
PCE Instruments PCE-ILD 10 Infrared thermometer; -50÷500°C; Resolution (IR): 0.1°C; ε: 0,1÷1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	PCE-ILD 10				1	1 $167.17 10 $167.17 100 $167.17 1000 $167.17 10000 $167.17	Get Quote

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ILD10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
1090mhz signal Abstract: ILD1011 ILD1011M400 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer Contextual Info: Part Number: Integra ILD1011M400 Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M400 ILD1011M400 ILD1011M400-REV-PR4-DS-REVPR4 1090mhz signal ILD1011 INTEGRA TECHNOLOGIES ILD1011M400 1030mhz 4620 integra ild1011m 400w class d schematic probe wafer	PDF
ILD1011M160HV Contextual Info: Part Number: Integra ILD1011M160HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M160HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M160HV ILD1011M160HV ILD1011M160HV-REV-NC-DS-REV-B	PDF
Contextual Info: Part Number: Integra ILD1011M30 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M30 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device	Original	ILD1011M30 ILD1011M30 ILD1011M30-REV-NC-DS-REV-B	PDF
Contextual Info: Part Number: ILD1011M450HV Preliminary Integra TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1011M450HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M450HV ILD1011M450HV ILD1011M450HV-REV-PR1-DS-REV-A	PDF
Contextual Info: Part Number: Integra ILD1011M15 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability  Gold Metal The high power transistor part number ILD1011M15 is designed for Avionics systems operating at 1030-1090 MHz. This LDMOS FET device	Original	ILD1011M15 ILD1011M15 ILD1011M15-REV-NC-DS-REV-B	PDF
Contextual Info: Part Number: Integra ILD1011M400 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M400 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M400 ILD1011M400 ILD1011M400-REV-NC-DS-REV-I	PDF
Contextual Info: Part Number: ILD1012S500HV Preliminary Integra TECHNOLOGIES, INC. Avionics DME Band RF Power LDMOS FET Silicon LDMOS FET − High Power Gain − Superior thermal stability The high power transistor part number ILD1012S500HV is designed for Avionics DME systems operating at 1025-1150MHz. Operating at	Original	ILD1012S500HV ILD1012S500HV 1025-1150MHz. ILD1012S500HV-REV-PR1-DS-REV-NC	PDF
ILD1011M250 Abstract: ild10 Contextual Info: Part Number: Integra ILD1011M250 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M250 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M250 ILD1011M250 ILD1011M250-REV-NC-DS-REV-A ild10	PDF
Integra Technologies Contextual Info: Part Number: Integra ILD1011M15HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M15HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M15HV ILD1011M15HV ILD1011M15HV-REV-NC-DS-REV-E Integra Technologies	PDF
transistor BD 522 Abstract: J023 Contextual Info: Part Number: Integra ILD1011M550HV TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M550HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M550HV ILD1011M550HV ILD1011M550HV-REV-NC-DS-REV-A transistor BD 522 J023	PDF
Contextual Info: Part Number: Integra ILD1011M280HV Preliminary TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M280HV is designed for Avionics systems operating at 1030-1090 MHz. Operating at	Original	ILD1011M280HV ILD1011M280HV ILD1011M280HV-REV-PR1-DS-REV-B	PDF
bd 142 transistor Contextual Info: Part Number: Integra ILD1011M150 TECHNOLOGIES, INC. Avionics Band RF Power LDMOS FET Silicon LDMOS FET  High Power Gain  Superior thermal stability The high power transistor part number ILD1011M150 is designed for Avionics systems operating at 1030-1090 MHz. Operating at 50µs,	Original	ILD1011M150 ILD1011M150 ILD1011M150-REV-NC-DS-REV-B bd 142 transistor	PDF
ILD1-004 Abstract: ILD1-009 A947 ILD-1 Contextual Info: SIEMENS AKTIENGESELLSCHAF 47E D • ÖEBSbOS 0027175 fl ■ SIEG, SURFACE MOUNT T-Ÿ/-3C LEAD BEND OPTIONS -0 0 4 -0 0 9 S IE M E N S I The entire optocoupJer line is available with a lead bend for surface mounting. FEATURES • Surface Mountable • Available for all 4, 6, 8 & 16 Pin Plastic	OCR Scan	ILD1-004 ILD1-009 16-pin ILD1-009 A947 ILD-1	PDF
filter for GPS spice Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode Contextual Info: RF手册第14版用于高性能RF产品的应用和设计手册2010年5月恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用恩智浦RF手册令设计更简易恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率	Original	RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode	PDF

sot-89 BV SMD TRANSISTOR MARKING CODE Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションおよび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ	Original	NXPRF14 JESD204A AEC100 RFBFR90 RFBFQ33 TFF1004HN FMF11070HN sot-89 BV SMD TRANSISTOR MARKING CODE bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer	PDF
circuit diagram of GSM based home automation system Abstract: BF1118 MOBILE jammer GSM 1800 MHZ circuit diagram bgu7051 BLF578 CMMB antenna MRF6V2300N 300w power amplifier circuit diagram BF256B spice model maxim DVB Contextual Info: RF Manual 14th edition Application and design manual for High Performance RF products May 2010 2010 NXP B.V. copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by	Original		PDF