IGSS 100NA VGS 0V Search Results

LND150N8 equivalent

Abstract: depletion n-channel mosfet to-92 LND150 LND150N3 LND150N8 LND150ND MOSFET IGSS 100nA VDS 20V depletion-mode MOSFET
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET depletion n-channel mosfet to-92 N CHANNEL DEPLETION MOSFET N-Channel Depletion-Mode MOSFET high voltage TO-243AA 1000 volt mosfet to-92 depletion 400V power mosfet LND150N3 LND150N8
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND * Same as SOT-89. For carrier tape reels specify P023 for 1,000 units or P024 for 2,000 units.

LND250

Abstract: LND250K1 n-channel 500v sot 23 Power MOSFET MOSFET IGSS 100nA VDS 20V
Contextual Info: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

MOSFET IGSS 100nA VDS 20V

Abstract: N-Channel Depletion-Mode MOSFET high voltage Depletion MOSFET 20V N-Channel Depletion-Mode MOSFET depletion mode ramp generator depletion MOSFET n mosfet depletion MOSFET N SOT-23 n channel depletion MOSFET power relay N-channel mosfet
Contextual Info: LND250 Preliminary N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

transistor marking code 12W 12

Abstract: LN1E mosfet marking 12W LND150 LND150N3 LND150N8 LND150ND iGSS 100nA Vgs 0v depletion n-channel mosfet to-92 MOSFET IGSS 100nA VDS 20V
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E Where = 2-week alpha date code * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

ln1e

Abstract: depletion n-channel mosfet to-92 marking code ln1e MOSFET IGSS 100nA VDS 20V depletion mode ramp generator LND150 LND150N3 LND150N8 LND150ND
Contextual Info: LND150 N-Channel Depletion-Mode MOSFET Ordering Information Product marking for TO-243AA: Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 TO-243AA* Die 500V 1.0KΩ 1.0mA LND150N3 LND150N8 LND150ND LN1E❋ * Same as SOT-89. Product shipped on 2000 piece carrier tape reels.

N-Channel Depletion-Mode MOSFET

Abstract: MOSFET IGSS 100nA VDS 20V NDE SOT23 MARKING LND250 LND250K1 iGSS 100nA Vgs 0v DATE CODE FOR SUPERTEX n-channel 500v sot 23 Power MOSFET
Contextual Info: LND250 N-Channel Depletion-Mode MOSFET Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) Order Number / Package Product marking for SOT-23: TO-236AB* NDE❋ 500V 1.0KΩ 1.0mA LND250K1 where ❋ = 2-week alpha date code *Same as SOT-23. All units shipped on 3,000 piece carrier tape reels.

K3050

Abstract: 1A 300V TRANSISTOR 2A marking transistor 2SK3050 month marking "Field Effect Transistor" 300V switching transistor 91208-01001 Diode Marking N iGSS 100nA Vgs 0v
Contextual Info: PRODUCTS CPT3 TYPE PAGE 1/3 2SK3050 1. TYPE 2SK3050 2. STRUCTURE SILICON Ｎ-CHANNEL MOS FIELD EFFECT TRANSISTOR 3. APPLICATIONS SWITCHING 4. ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS ・・・ 600V GATE-SOURCE VOLTAGE IGSS ・・・ ±30V

FET marking code ndew

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

Contextual Info: LND250 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND250 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

Contextual Info: Supertex inc. LND250 N-Channel Depletion-Mode DMOS FET General Description Features ► ► ► ► ► ► ► Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

transistor marking code 12W SOT-23

Contextual Info: Supertex inc. LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 LND150 12w marking code of transistor sot 23 12w sot-23 sot-23 12w 12W MARKING sot23 LN1E Nd150
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: 12w SOT 23 package marking code marking 12W SOT23 12w marking code sot 23 LN1E 12w marking code sot23 12W MARKING sot23 12w marking code of transistor sot 23 sot-23 marking 12w 12w sot-23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

Contextual Info: TT TOSHIBA -CDISCRETE/OPTO} De J t D^SSD 99D 16737 9097250 TOSHIBA <DISCRETE/OPTO G01b737 7 D r - 5J - 1S $)ìhì h < TOSHIBA SEMICONDUCTOR FIELD EFFECT TRANSISTOR 2 S K 6 7 h TECHNICAL DATA SILICON N C H ANNEL MOS TYPE 7T-MOS I ) TENTATIVE INDUSTRIAL APPLICATIONS

FET marking code ndew

Abstract: LND250 n-channel SOT-23 Depletion Mode LND150k1-G 125OC LND250K1-G depletion mode ramp generator Diode Marking ef
Contextual Info: LND250 Features ► ► ► ► ► ► ► R fo R ef r e er N co ew m to m LN De e n s D i d 15 gn e d 0 s K 1G N-Channel Depletion-Mode DMOS FET General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability

LN1E

Abstract: Marking code mps
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

LN1E

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features General Description ► ► ► ► ► ► ► The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown

transistor marking code 12W SOT-23

Abstract: marking 12W SOT23 12w SOT 23 package marking code 12w marking code sot 23 12W MARKING sot23 12w marking code sot23 LN1E LND150k1-G 12w 08 12w marking code of transistor sot 23
Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Excellent thermal stability Integral source-drain diode High input impedance and low CISS

40822

Contextual Info: LND150 N-Channel Depletion-Mode DMOS FET General Description Features The LND150 is a high voltage N-channel depletion mode normally-on transistor utilizing Supertex’s lateral DMOS technology. The gate is ESD protected. Free from secondary breakdown Low power drive requirement

160V 30A TRANSISTOR

Abstract: power transistor 200V, 30A
Contextual Info: TOSHIBA { D I S C R E T E / O P T O 9097250 ¿Toshiba T O S H IB A TT < D IS C R E T E / O P T O > DE | l C H 7 a S D D01bflD4 7 |~~ 99D 16804 D T -3 q -\3 TOSHIBA FIE LD EFFECT TRANSISTOR YT F 2 5 0 SIL IC O N N CHANNEL MOS TYPE ff-M OS I SEMICONDUCTOR

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} D e | ‘ì D c17E5D QülbûlO 5 99D 16810 9097250 TOSHIBA <DISCRETE/OPTO ¿fasìubt SEMICONDUCTOR TOSHIBA DT-S^-lS FIELD EFFECT TRANSISTOR Y T F 2 5 3 SILICON N C H A NNEL MOS TYPE TECHNICAL DATA 71 -MOS HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.

IRFC43N50KB

Abstract: IRFPS43N50K Power MOSFET Wafer 082S
Contextual Info: PD - 94242 IRFC43N50KB D HEXFET Power MOSFET Die in Wafer Form 500V RDS on =0.090Ω 6" Wafer G S Electrical Characteristics Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS TJ TSTG Description Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance

Contextual Info: TYPE PRODUCTS TO-220FM PAGE RCX510N25 1.TYPE RCX510N25 2.STRUCTURE SILICON N-CHANNEL MOS FET 3.APPLICATIONS SWITCHING 1/4 4.ABSOLUTE MAXIMUM RATINGS [Ta=25℃] DRAIN-SOURCE VOLTAGE VDSS ・・・ 250V GATE-SOURCE VOLTAGE VGSS ・・・ ±30V DRAIN CURRENT