IGBT TRANSISTOR Search Results

NT 407 F TRANSISTOR TO 220

Abstract: NT 407 F MOSFET TRANSISTOR NT 407 F TRANSISTOR MGP20N35CL
Contextual Info: MOTOROLA Order this document by MGP20N35CL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MGP20N35CL SMARTDISCRETES Internally Clamped, N-Channel IGBT 20 AMPERES VOLTAGE CLAMPED N–CHANNEL IGBT VCE on = 1.8 VOLTS 350 VOLTS (CLAMPED) This Logic Level Insulated Gate Bipolar Transistor (IGBT)

mj122

Abstract: G20N120CN HGTG20N120CN HGTG20N120CND LD26 g20n120
Contextual Info: HGTG20N120CN Data Sheet December 2001 63A, 1200V, NPT Series N-Channel IGBT Features The HGTG20N120CN is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device

Contextual Info: IGBT SGS10N60RUFD Short Circuit Rated IGBT General Description Features Fairchild's RUFD series of Insulated Gate Bipolar Transistors IGBTs provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control,

15N60

Abstract: NGTB15N60S1EG
Contextual Info: NGTB15N60S1EG IGBT - Short-Circuit Rated This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Non−Punch Through (NPT) Trench construction, and provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the

15N41CLG

Abstract: 15N41G 15n41 NGP15N41CLG 15N41CLG transistor NGD15N41A 350VVGE gd 361 transistor NGB15N41A NGP15N41AC
Contextual Info: NGD15N41CL, NGD15N41ACL, NGB15N41CL, NGB15N41ACL, NGP15N41CL, NGP15N41ACL Ignition IGBT 15 A, 410 V http://onsemi.com 15 AMPS 410 VOLTS VCE on 3 2.1 V @ IC = 10 A, VGE . 4.5 V N−Channel DPAK, D2PAK and TO−220 This Logic Level Insulated Gate Bipolar Transistor (IGBT) features

D6563

Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long term operation and supply for industrial instrument market.

hcpl4053

Abstract: IL33153 ac motor speed control circuit diagram with IGBT HCPL-4053 what is fast IGBT transistor desaturation design Discrete IGBTS wiring diagram brushless AC motor HALF BRIDGE NPN DARLINGTON POWER MODULE igbt ac motor speed control
Contextual Info: TECHNICAL DATA IL33153 Single IGBT Gate Driver The IL33153 is specifically designed as an IGBT driver for high power applications that include ac induction motor control, brushless dc motor control and uninterruptable power supplies. Although designed for driving discrete and module IGBTs, this device offers a cost effective solution for driving power MOSFETs and Bipolar Transistors. Device protection features include the choice of desaturation or overcurrent sensing

Contextual Info: QID1210005 Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 100 Amperes/1200 Volts Y A AA D AC AB F Z DETAIL "B" Q Q Q P 1 2 3 U 4 E2 5 6 7 C2 8 9 Description: Powerex IGBT Modules are

IRGS15B60KPBF

Abstract: IRGS15B60K
Contextual Info: PD - 96358 INSULATED GATE BIPOLAR TRANSISTOR Features IRGS15B60KPbF C • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. • Lead-Free VCES = 600V IC = 15A, TC=100°C

Contextual Info: UCC27531 UCC27533, UCC27536 UCC27537, UCC27538 www.ti.com SLUSBA7D – DECEMBER 2012 – REVISED APRIL 2013 2.5-A and 5-A, 35-VMAX VDD FET and IGBT Single-Gate Driver Check for Samples: UCC27531 , UCC27533, UCC27536 , UCC27537, UCC27538 FEATURES APPLICATIONS

fuji 6mbp

Abstract: 150RA-060
Contextual Info: IGBT IPM 600V 6x150A 6MBP 150RA-060 Intelligent Power Module R-Series n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items DC Bus Voltage DC Bus Voltage (surge) DC Bus Voltage (short operating) Collector-Emitter Voltage Inverter Continuous

Contextual Info: ACPL-P343 and ACPL-W343 4.0 Amp Output Current IGBT Gate Drive Optocoupler with Rail-to-Rail Output Voltage in Stretched SO6 Data Sheet Description Features The ACPL-P343/W343 contains an AlGaAs LED, which is optically coupled to an integrated circuit with a power

Contextual Info: Preliminary Data Sheet PS9331L, PS9331L2 R08DS0111EJ0100 Rev.1.00 May 24, 2013 2.5 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, 6-PIN SDIP PHOTOCOUPLER DESCRIPTION The PS9331L and PS9331L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo

Contextual Info: Data Sheet PS9332L, PS9332L2 R08DS0105EJ0100 Rev.1.00 Sep 06, 2013 2.0 A OUTPUT CURRENT, HIGH CMR, IGBT GATE DRIVE, ACTIVE MILLER CLAMP, 8-PIN SDIP PHOTOCOUPLER DESCRIPTION The PS9332L and PS9332L2 are optical coupled isolators containing a GaAlAs LED on the input side and a photo

Contextual Info: SKHI 24 . Absolute Maximum Ratings Symbol Conditions $  & "6-7% "7A A  - Hybrid Dual IGBT Driver SKHI 24 Preliminary Data Features                      !"  !#"  " $%& ''  #"  

Contextual Info: CM150DY-34A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com Dual IGBTMOD A-Series Module 150 Amperes/1700 Volts A F F W X G2 B G E2 E N L (4 PLACES) H E1 C2E1 E2 C1 K K K G G1 P P Q Description: Powerex IGBTMOD™ Modules

KF6N60

Abstract: 2SK3850 equivalent KF9N25 KF7N50 MDF10N65b transistor PANASONIC ZENER Kf10n60 KIA278R12PI equivalent kid65003ap equivalent kia578r05
Contextual Info: Factory : #149, Gongdan-1-dong Gumi, Gyeongsangbuk-do, KOREA 上 http://www.kec.co.kr http://www.keccorp.com Head office : #275-5, Yangjae-dong, Seocho-gu Seoul, KOREA 海 ww 众 w. 韩 ck 授 b- 权 sh 代 .c 理 om 2014 Semiconductor Product Guide KEC CORPORATION

Contextual Info: Freescale Semiconductor User’s Guide Document Number: KT33814UG Rev. 2.0, 4/2013 KIT33814AEEVBE Evaluation Board Featuring the MC33814 Two Cylinder Small Engine Control IC Figure 1. KIT33814AEEVBE Evaluation Board Table of Contents 1 Kit Contents / Packing List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Contextual Info: RURD660, RURD660S Data Sheet January 2002 6A, 600V Ultrafast Diodes Features The RURD660 and RURD660S are ultrafast diodes with soft recovery characteristics trr < 55ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60014FV-C General Description Key Specifications     The BM60014FV-C is a gate driver with an isolation voltage of 2500Vrms, I/O delay time of 120ns, and

Contextual Info: _ RURD620CCS9A_F085 Data Sheet August 2011 6A, 200V Ultrafast Dual Diodes Features The RURD620CCS9A_F085 are ultrafast dual diodes with soft recovery characteristics trr < 25ns . They have low forward voltage drop and are silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: RHRG75120 November 2013 Data Sheet 75 A, 1200 V, Hyperfast Diode Features The RHRG75120 is a hyperfast diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ionimplanted epitaxial planar construction. These devices are intended

STTA2512P

Abstract: STTA5012TV1 STTA5012TV2
Contextual Info: STTA2512P STTA5012TV1/2 TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 25A VRRM 1200V trr (typ) 60ns VF (max) K2 A2 K1 A1 STTA5012TV1 1.9V A2 K1 K2 A1 STTA5012TV2 FEATURES AND BENEFITS ULTRA-FAST, SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN

Contextual Info: ISL9R460PF2 4A, 600V Stealth Diode General Description Features The ISL9R460PF2 is a Stealth™ diode optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current IRRM and exceptionally soft recovery