IGBT IXGH40N60A Search Results

IGBT IXGH40N60A Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT IXGH40N60A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
200n60 Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120 Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40	Original	PLUS247 20N30 28N30 30N30 40N30 31N60 38N60 41N60 60N60 O-264 200n60 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120	PDF
10A600V Abstract: 1XGH20N60AU1 IGBT cross reference HGTP20N6QB3 IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V Contextual Info: SAMSUNG IGBT TOSHIBA MOTOLORA HARRIS SIEM ENS IXYS HUfU3NÖ0B3S hü'mSNtäoöä U ltiJ 102 H U IU /N Ö Ü B 3 HGIP12NB0B3 IXGP10N60A U 115J101 IXGH10N60A HGTP20N6QB3 GT25JT01 HGlu2UfJt>063 IXGH20N6QA IXGH24N6QA HU Î J4UNöUt33 IXGH40N60A IXGH50N6ÛA, HU I P^NbUBaU	OCR Scan	HGIP12NB0B3 115J101 IXGP10N60A IXGH10N60A HGTP20N6QB3 GT25JT01 IXGH20N6QA IXGH24N6QA IXGH40N60A IXGH50N6 10A600V 1XGH20N60AU1 IGBT cross reference IXSH20N60AU1 20a600v 12A600V CT60AM-20 5N60RUFD 5A1200V	PDF
IGBT IXGH40N60A Abstract: IXGH40N60A IXGH40N60 40N60A Contextual Info: IXGH40N60A IGBT V CES 600 V 75 A 3.0 V ^C25 L O W V CE S„ High speed V CE(sat) Not for new designs Symbol Test Conditions Maximum Ratings v ces T j = 25° C to 150° C 600 V V CGR T j, = 25° C to 150° C; RC„at = 1 MQ 600 V VGES Continuous J-20 V VGE*	OCR Scan	IXGH40N60A O-247 40N60A IGBT IXGH40N60A IXGH40N60A IXGH40N60 40N60A	PDF
IXGD40N60A Abstract: 1XGH10N60 xgh10n60a IXGD30N60 IXGD10N60 IXGH40N60 IXGH50N60A 1X57 IXGD40N60 IXGH60N60 Contextual Info: IXYS Insulated Gate Bipolar Transistors IGBT-Chips Type e» High Speed Low T j. s is ir c £ tn typ 28°C ns C hip typ V V A S* IXGD28N30 IXGD40N30 300 1.8 1.45 20 20 1500 2500 180 220 1X43 1X57 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60	OCR Scan	IXGD28N30 IXGD40N30 IXGD10N60 IXGD20N60 IXGD31N60 IXGD30N60 IXGD38N60 IXGD40N60 IXGD60N60 IXGD200N60 IXGD40N60A 1XGH10N60 xgh10n60a IXGH40N60 IXGH50N60A 1X57 IXGH60N60	PDF
IXGH30N50A Abstract: IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60 Contextual Info: IXYS' MOSIGBT combines the best characteristics ofPower MOSFET and bipolar devices on a single mono lithic chip.The MOS gated input allows the MOSIGBT to be voltage driven like a MOSFET The complexity and cost of the drive circuitiy is greatly reduced. Since the MOSIGBT uses	OCR Scan	4bflb55b IXGH30N50A IXGH20N50A IXGP10N50A IXGH20N50 IXGH25N80A ixgh40n60 IXGP10N60A Amp. mosfet 1000 watt IXGH25N90A IXGM30N60	PDF