IGBT CLIP Search Results

40n60 igbt

Abstract: 35N120u1 B1116 equivalent for 30n60 40n60 equivalent 30n60 equivalent 30n60 to-220 ixsn 35N120U1 igbt equivalent to 40n60 80n60
Contextual Info: SCSOA IGBT S-Series / D-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode Short Circuit Current Rated SCSOA IGBT S-Series Contents IGBT VCES max V High Speed Low VCE(sat) 600 IC VCE(sat) max TC = 25 °C TC = 25 °C A V TO-220 (IXSP) TO-263

200n60

Abstract: 20N30 n60c 50N60 7N60B IC IGBT 25N120 IC600 80n60 60n60 igbt 25N120
Contextual Info: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors IGBT IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE(sat) 600 1000 TO-220 TO-263 TO-247 IC VCE(sat) (IXGP) (IXGA) (IXGH) max TC = 25 °C TC=25 °C A V 40 56 60 40

Contextual Info: IXA40RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling

Contextual Info: IXA30RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling

Contextual Info: IXA20RG1200DHGLB tentative XPT IGBT = ISOPLUS Surface Mount Power Device Boost Topology XPT IGBT Part number Backside: isolated 7 BD VDD 9 1 FWD 3 2 8 Features / Advantages: XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling

Contextual Info: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package  SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction.  Low Saturation Voltage IGBT  Low VF Diode Bridge Rectifier

IGBT 4000V

Abstract: isoplus ixys mounting IXEL40N400 ixys IXLF19N250A Discrete IGBTS Igbts guide isoplus
Contextual Info: Contact: Donald Humbert Tel: 408-982-0700 Fax: 408-496-0670 IXYS Releases 4000V/40A IGBT to Expand its Very High Voltage VHV IGBT Family SANTA CLARA, Calif.-(BUSINESS WIRE)-Feb. 13, 2006-IXYS Corporation (NASDAQ:SYXI News) announces the release of a new 4000V/40A IGBT, the IXEL40N400. IXYS' unique offering of

Super-247 Package

Abstract: IRG4PSC71UD
Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

Contextual Info: PD - 91682A IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

diode lt 247

Abstract: IRG4PSC71UD TB diode 1084 GE
Contextual Info: PD - 91682 IRG4PSC71UD UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

IRFPS37N50A

Abstract: IRGPS40B120UP 312V marking code igbt 40a 600v
Contextual Info: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

TRANSISTOR N 1380 600 300 SC

Abstract: MOSFET 40A 600V IRGPS40B120U mosfet 1200V 40A 1200V, IGBT 500A 1200V
Contextual Info: PD- 94295A IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

mosfet 1200V 40A

Abstract: IRFPS37N50A IRGPS40B120U 800V 40A mosfet 94295D *40b120u ir igbt 1200V 40A
Contextual Info: PD- 94295D IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 95899A IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT VCES = 1200V C Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Super-247 Package

Abstract: IRG4PSC71UD
Contextual Info: International IÖR Rectifier PD - 91682A IRG4PSC71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT Features • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency minimum switching and conduction losses than

mosfet 1200V 40A

Abstract: *40b120u ir igbt 1200V 40A 800V 40A mosfet igbt 40A 600V IRFPS37N50A IRGPS40B120U transistor 600v 500a 312V marking code l200h
Contextual Info: PD- 94295B IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD - 95892 IRG4PSH71UPbF UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: PD- 95899 IRGPS40B120UP INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

Contextual Info: PD- 94295C IRGPS40B120U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT C VCES = 1200V Features • Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE on Temperature Coefficient. • Super-247 Package.

UC3726

Abstract: UC3727 igbt testing procedure waveform generator specifications
Contextual Info: DN-60 Design Note UC3726 / UC3727 IGBT Isolated Driver Pair Evaluation Kit Testing Procedure by : Bill Andreycak The UC3726/UC3727 IGBT isolated driver pair evaluation kit is available for design engineers to verify the performance and functionality of this

square pulse generator ic

Abstract: igbt testing procedure IGBT DRIVER SCHEMATIC Pulse Generator Frequency Generator 10kHz Andreycak gate DRIVER IGBT IGBT Driver Power Schematic ISOLATED GATE DRIVER square wave generator ic
Contextual Info: DN-60 Design Note UC3726 / UC3727 IGBT Isolated Driver Pair Evaluation Kit Testing Procedure by : Bill Andreycak The UC3726/UC3727 IGBT isolated driver pair evaluation kit is available for design engineers to verify the performance and functionality of this

Rectifier, 70A, 1000V

Abstract: IRFPS37N50A IRG4PSH71U 70A 1200V IGBTS 1200v fet transistor 58w
Contextual Info: PD - 91685 IRG4PSH71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: Advance Technical Information IGBT with Diode Low Saturation Voltage IGBT with Low Forward Drop Diode Electrically Isolated Mounting Tab IXGR 50N60A2U1 VCES IC25 VCE sat = 600 V = 75 A = 1.7 V Preliminary Data Sheet Symbol Test Conditions Maximum Ratings