IGBT 600V 50A Search Results
IGBT 600V 50A Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT50J123 |
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IGBT, 600 V, 59 A, TO-3P(N) | Datasheet | ||
| GT30J122A |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J121 |
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IGBT, 600 V, 20 A, TO-220SIS | Datasheet | ||
| GT30J121 |
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IGBT, 600 V, 30 A, TO-3P(N) | Datasheet | ||
| GT20J341 |
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IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS | Datasheet |
IGBT 600V 50A Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: APTGV50H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 50A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3 |
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APTGV50H60T3G | |
APTGV50H60T3G
Abstract: APT0406 APT0502
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APTGV50H60T3G APTGV50H60T3G APT0406 APT0502 | |
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Contextual Info: APTGV50H60BG Trench & Field Stop IGBT Q1, Q3: VCES = 600V , IC = 50A @ Tc = 80°C Boost chopper CoolMos + full bridge NPT & Trench + Field Stop IGBT Power module K K CoolMOS™ Q5: VCES = 600V ; IC = 49A @ Tc = 25°C VBUS2 VBUS1 Q1 Q3 CR1 G1 CR5 Fast NPT IGBT Q2, Q4: |
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APTGV50H60BG | |
APT0406
Abstract: APT0502 solar converter
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APTCV60TLM70T3G APT0406 APT0502 solar converter | |
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Contextual Info: SIGC42T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC42T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 50A |
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SIGC42T60NC Q67041-A4692A001 7272-M, | |
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Contextual Info: SIGC42T60NC IGBT Chip in NPT-technology C FEATURES: • 600V NPT technology • 100µm chip • positive temperature coefficient • easy paralleling Chip Type VCE SIGC42T60NC 600V This chip is used for: • IGBT-Modules G Applications: • drives ICn 50A |
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SIGC42T60NC Q67041-A4692A001 7272-M, | |
1465F
Abstract: M4150 APT0406 APT0502 CR152
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APTCV40H60CT1G APTCV50H60CT1G 1465F M4150 APT0406 APT0502 CR152 | |
50N60C3Contextual Info: Preliminary Technical Information IXXH50N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 50A 2.30V 42ns TO-247 AD Symbol Test Conditions VCES VCGR TJ = 25°C to 175°C |
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IXXH50N60C3D1 IC110 O-247 IF110 50N60C3 | |
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Contextual Info: APTCV40H60CT1G Full - Bridge CoolMOS & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 50A @ Tc = 80°C CoolMOS Q2, Q4: VDSS = 600V ; ID = 36A @ Tc = 25°C Application 3 4 • Solar converter Features Q3 Q1 |
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APTCV40H60CT1G APTCV50H60CT1G | |
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Contextual Info: APTGV30H60T3G Full - Bridge NPT & Trench + Field Stop IGBT Power module Trench & Field Stop® IGBT Q1, Q3: VCES = 600V ; IC = 30A @ Tc = 80°C Fast NPT IGBT Q2, Q4: VCES = 600V ; IC = 30A @ Tc = 80°C 13 14 Application Q1 CR1 18 CR3 • Solar converter Q3 |
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APTGV30H60T3G | |
APT0406
Abstract: APT0502 APTGV30H60T3G
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APTGV30H60T3G APT0406 APT0502 APTGV30H60T3G | |
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Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings |
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MMIX1X200N60B3 IC110 110ns 10-30kHz MMIX1X200N60B3 | |
IXXH50N60B3D1Contextual Info: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C |
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IC110 IXXH50N60B3D1 135ns O-247 IF110 50N60B3D1 IXXH50N60B3D1 | |
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Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching Symbol Test Conditions VCES VCGR |
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MMIX1X200N60B3H1 IC110 110ns 10-30kHz IF110 MMIX1X200N60B3 | |
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MMIX1X200N60B3Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM MMIX1X200N60B3 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 120A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings |
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10-30kHz IC110 MMIX1X200N60B3 110ns MMIX1X200N60B3 | |
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Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/Diode IXXN200N60B3H1 VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 98A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching SOT-227B, miniBLOC E153432 Symbol Test Conditions VCES VCGR |
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IXXN200N60B3H1 IC110 110ns 10-30kHz OT-227B, E153432 IF110 200N60B3 | |
IXXH50N60B3D1
Abstract: 50N60B3D1 18A100
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IXXH50N60B3D1 IC110 135ns O-247 IF110 062in. 50N60B3D1 IXXH50N60B3D1 18A100 | |
MMIX1X200N60B3H1Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings |
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10-30kHz IC110 IF110 MMIX1X200N60B3H1 110ns MMIX1X200N60B3 MMIX1X200N60B3H1 | |
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Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGR72N60B3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings |
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IXGR72N60B3H1 IC110 247TM IF110 72N60B3 02-10-09-D | |
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Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM w/Diode MMIX1X200N60B3H1 Electrically Isolated Tab VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 72A 1.7V 110ns Extreme Light Punch Through IGBT for 10-30kHz Switching C G Symbol Test Conditions Maximum Ratings |
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MMIX1X200N60B3H1 IC110 110ns 10-30kHz IF110 MMIX1X200N60B3 | |
72N60A3
Abstract: IXGR72N60A3H1 IF110 ISOPLUS247
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IXGR72N60A3H1 IC110 250ns IF110 72N60A3 04-23-09-C IXGR72N60A3H1 IF110 ISOPLUS247 | |
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Contextual Info: Preliminary Technical Information IXGR72N60C3 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 35A 2.7V 55ns High-Speed Low-Vsat PT IGBT 40-100 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES |
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IXGR72N60C3 IC110 247TM 72N60C3 11-25-09-C | |
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Contextual Info: Advance Technical Information GenX3TM 600V IGBT w/Diode IXGR72N60A3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 52A 1.35V 250ns Ultra-Low Vsat PT IGBT for up to 5kHz Switching Symbol Test Conditions Maximum Ratings |
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IXGR72N60A3H1 IC110 250ns 247TM 72N60A3 04-23-09-C | |
IXGR60N60C3C1
Abstract: G60N60 60N60C3 IF110 ISOPLUS247
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IXGR60N60C3C1 IC110 40-100kHz 247TM IF110 60N60C3C1 IXGR60N60C3C1 G60N60 60N60C3 IF110 ISOPLUS247 | |