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    IGBT 600V 40A Search Results

    IGBT 600V 40A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT50J123
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 59 A, TO-3P(N) Datasheet
    GT30J122A
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, TO-220SIS Datasheet
    GT30J121
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 30 A, TO-3P(N) Datasheet
    GT20J341
    		Toshiba Electronic Devices & Storage Corporation IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS Datasheet

    IGBT 600V 40A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT IXGR72N60B3H1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings


    Original     		IXGR72N60B3H1 IC110 247TM IF110 72N60B3 02-10-09-D PDF

    IXGR72N60B3H1

    Abstract: 72N60B3 IF110 ISOPLUS247 180v dc motor speed control
    Contextual Info: Preliminary Technical Information IXGR72N60B3H1 GenX3TM 600V IGBT VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT for 5-40 kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings


    Original     		IXGR72N60B3H1 IC110 247TM IF110 72N60B3 02-10-09-D IXGR72N60B3H1 IF110 ISOPLUS247 180v dc motor speed control PDF

    Contextual Info: IXGR72N60B3H1 GenX3TM 600V IGBT w/ Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Tab) = = £ = 600V 40A 1.80V 92ns Medium Speed Low Vsat PT IGBT ISOPLUS247TM for 5-40 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25C to 150C


    Original     		IXGR72N60B3H1 IC110 ISOPLUS247TM IF110 72N60B3 02-10-09-D PDF

    75N60

    Contextual Info: Preliminary Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 75N60 PDF

    IXGR60N60C3C1

    Abstract: G60N60 60N60C3 IF110 ISOPLUS247
    Contextual Info: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS 247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		IXGR60N60C3C1 IC110 40-100kHz 247TM IF110 60N60C3C1 IXGR60N60C3C1 G60N60 60N60C3 IF110 ISOPLUS247 PDF

    Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR


    Original     		IC110 IXXH75N60B3D1 125ns O-247 IF110 75N60B3 PDF

    G60N60

    Abstract: IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode
    Contextual Info: IXGR60N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		IXGR60N60C3C1 IC110 40-100kHz ISOPLUS247TM IF110 60N60C3C1 1-15-10-A G60N60 IF110 ISOPLUS247 IXGR60N60C3C1 I40-13 Ultra fast diode PDF

    Contextual Info: GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGR60N60C3C1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100kHz Switching ISOPLUS247TM Symbol Test Conditions Maximum Ratings VCES


    Original     		IXGR60N60C3C1 IC110 40-100kHz ISOPLUS247TM IF110 60N60C3C1 1-15-10-A PDF

    375A1

    Abstract: IXXH75N60C3
    Contextual Info: Advance Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3 IC110 O-247 062in. 75N60C3 375A1 IXXH75N60C3 PDF

    75N60B3D1

    Abstract: IXXH75N60B3
    Contextual Info: Advance Technical Information IXXH75N60B3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60B3 IC110 125ns O-247 062in. 75N60B3D1 IXXH75N60B3 PDF

    Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60C3 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH75N60C3 O-247 Non60 75N60C3 PDF

    75N60B3D1

    Contextual Info: Advance Technical Information XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) IXXH75N60B3 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH75N60B3 125ns O-247 75N60B3D1 PDF

    75n60

    Contextual Info: Preliminary Technical Information IXXH75N60C3 XPTTM 600V IGBT GenX3TM VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.3V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3 IC110 O-247 062in. 75N60C3 75n60 PDF

    Contextual Info: Preliminary Technical Information XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH75N60C3D1 Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IC110 IXXH75N60C3D1 O-247 IF110 75N60C3 PDF

    IXXH75N60C3D1

    Abstract: 75N60C3
    Contextual Info: Preliminary Technical Information IXXH75N60C3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 20-60 kHz Switching = = ≤ = 600V 75A 2.2V 75ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60C3D1 IC110 O-247 IF110 062in. 75N60C3 IXXH75N60C3D1 PDF

    IXGH48N60B3C1

    Abstract: IF110 48n60 DS100140A IXGH48N60
    Contextual Info: Preliminary Technical Information IXGH48N60B3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXGH48N60B3C1 IC110 116ns O-247 IF110 48N60B3C1 IXGH48N60B3C1 IF110 48n60 DS100140A IXGH48N60 PDF

    Contextual Info: Preliminary Technical Information GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGH48N60B3C1 = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IC110 IXGH48N60B3C1 116ns O-247 IF110 48N60B3C1 PDF

    g60n

    Abstract: 60N60C
    Contextual Info: GenX3TM 600V IGBT w/ Diode IXGR60N60C3D1 VCES IC110 VCE sat tfi(typ) (Electrically Isolated Back Surface) = = ≤£ = 600V 30A 2.5V 50ns High Speed PT IGBT for 40-100 kHz Switching Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR


    Original     		IXGR60N60C3D1 IC110 IF110 60N60C3 01-15-10-E g60n 60N60C PDF

    75N60B3

    Abstract: IXXH75N60B3D1 75n60
    Contextual Info: Advance Technical Information IXXH75N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 75A 1.85V 125ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C


    Original     		IXXH75N60B3D1 IC110 125ns O-247 IF110 062in. 75N60B3 IXXH75N60B3D1 75n60 PDF

    mosfet 1200V 40A

    Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
    Contextual Info: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA


    Original     		LC-96585 O-252AA HGTD3N60A4S O-220AB O-263AB O-247 O-264AA O-268AA HGTD3N60C3S HGT1S3N60A4S* mosfet 1200V 40A igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S PDF

    Contextual Info: APT20GT60KR 600V 40A Thunderbolt IGBT TO-220 IGBT™ The Thunderbolt is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		APT20GT60KR O-220 150KHz MIL-STD-750 PDF

    Contextual Info: APT20GT60KR APT20GT60KR 600V 40A Thunderbolt IGBT™ TO-220 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		APT20GT60KR O-220 150KHz APT20GT60KR O-220AC PDF

    Contextual Info: APT20GT60BR APT20GT60BR 600V 40A Thunderbolt IGBT™ TO-247 The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		APT20GT60BR O-247 150KHz PDF

    Contextual Info: APT20GT60BR 600V 40A Thunderbolt IGBT TO-247 The Thunderbolt IGBT™ is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior ruggedness and ultrafast switching speed. • Low Forward Voltage Drop


    Original     		APT20GT60BR O-247 150KHz APT20GT60BR 66VCES MIL-STD-750 PDF