IGBT 600 35 Search Results

to-3pl

Abstract: igbt to220 1MBC15-060 1MBH50D-060 1MB30-060 1MB20-060 1MBC05-060 1MBC05D-060 1MBC10D-060 1MBG10D-060
Contextual Info: 22307^5 GGDMODO 70b • s DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 50 Amps Device Vces Type lc Pc VcE(sat V g e = 15V Cont. Per IGBT Max. lc Watts Volts Amps Volts Amps 1MBC05-060 600 5 1M B C 10-060 600 600 600 : 1M BC15-060 1M B20-060 Switching Time (Max.)

1MBC15-060

Abstract: 1mb12-140 TO-3PL 1MBH50D-060 collmer igbt
Contextual Info: DISCRETE IGBT 600 VOLT, DISCRETE IGBT • 5 - 5 0 Amps Device Type V ces Pc lc Tc=25°C Tc=80°C Tc=100°C Volts Amps Amps Amps 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 600 600 600 600 13 15 5 10 1MB30-060 1MBH50-060 600 600 20 24 38 48 82 20 30 Vge = 15V

2mb1200

Abstract: DIODE s3l 2MB1300 2mb1200l 2MB1200LB-060 1MB1300L-060 1mb1400l-060 1MBI50L-060 2MB1100L-060 2MBI50L-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600 600

Contextual Info: STANDARD HERMETIC IGBT MODULES WITH GATE DRIVERS HIGH SPEED IG BT DEVICES WITH FAST REVERSE RECOVERY DIODES IGBT CHARACTERISTICS Tc=90°C Continuous Collector Current lc @ To=25°C Pulsed Collector Current T c=25°c 1 ms Volts Amps Amps Amps 600 600 600 600

LT 220 diode

Contextual Info: DISCRETE IGBT 600 VO LT, D IS C R E T E IGBT • 5-50 Amps Device Vces !' Type Volts 60B 1MBC05-060 1MBC10-060 1MBC15-060 1MB20-060 1MB30-060 1MBH50-060 600 600 600 600 600 V g e =15V lc Cont. Pc Per&BT VcE sal Max. Amps 5 10 15 20 30 50 Watts Volts 3.0 3.0

Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling

Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■

Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling

STGIPS35K60L1

Abstract: Stgips35k60 GIPS35K60L1
Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Preliminary data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling diodes ■

2mb1200

Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060
Contextual Info: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600

Contextual Info: STGIPS35K60L1 SLLIMM small low-loss intelligent molded module IPM, single phase - 35 A, 600 V short-circuit rugged IGBT Datasheet − production data Features • IPM 35 A, 600 V single phase IGBT including control ICs for gate driving and free-wheeling

IXGH20N60AU1

Abstract: IXGH20N60U1 20N60AU1 *GH20N60AU1
Contextual Info: Low VCE sat IGBT with Diode High speed IGBT with Diode VCES Combi Packs IXGH 20 N60U1 600 V IXGH 20 N60AU1 600 V Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ 600 600 V V VGES VGEM Continuous Transient

IGBT EQUIVALENT

Abstract: SC20P 402-12 SC26P
Contextual Info: CAPACITORS FOR POWER ELECTRONICS Snubber Capacitors & Modules SM series Module for IGBT equivalent circuit SM 04 * Low -inductance & high-Q * Easy connecting Type IGBT [VCES] Diode [VRRM /lo/trr] Cap 600/150 600/10/0.05 1.5 *P [A] W H T 450/600 75 45.5 31.5

Contextual Info: ^C25 VCE sat 20 A 20 A 2.5 V 3.0 V VCES Low VCE(sat) IGBT with Diode High speed IGBT with Diode IXGA/IXGH 10N60U1 600 V IXGA/IXGH 10 N60AU1 600 V Combi Packs Preliminary data Symbol Test Conditions V« Td = 25°C to 150°C 600 V VCGR ^ 600 V VGES Continuous

Contextual Info: HiPerFASTTM IGBT with HiPerFRED IXGN 50N60BD3 VCES IC25 VCE sat = 600 V = 75 A = 2.5 V Buck configuration IGBT Preliminary data sheet Symbol Test Conditions VCES TJ = 25°C to 150°C Maximum Ratings 600 TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous

ID110

Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

16N60

Abstract: 16N60C2D1
Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

10N60A

Abstract: IGBT 10N60 10N60 10N60 e N60A
Contextual Info: Low VCE sat IGBT High speed IGBT IXGH 10 N60 IXGH 10 N60A Maximum Ratings VCES IC25 VCE(sat) 600 V 600 V 20 A 20 A 2.5 V 3.0 V Symbol Test Conditions VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM

igbt module

Abstract: QID0660009 IGBT 600V 600A resistance ALUMINUM
Contextual Info: QID0660009 Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Dual IGBT Module 600 Amperes / 600 Volts Description: Powerex Dual IGBT Module is designed specially for customer applications. Features: „ „ „ „ „ „ „ „ Dim Inches Millimeters

Contextual Info: IGBT IGBT: INS. GATE BIPOLAR TRANSISTOR PACKAGE TO-257 % TO-254 0 j/c * °c/w 570 750 2.0 3.1 310 750 2.0 31 2.0 800 1500 1.25 24 2.9 100 1500 1.25 bvces SNG30620 600 20 2.6 SNG30620A 600 20 600 SNG20640 VOLTS ^ies * pf DEVICE TYPE fC cont AMPS VCE (sat)

Contextual Info: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 641 A Ts = 70 °C 512 A 600 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM606GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V

STGB3NB60KD

Abstract: STGB3NB60KDT4 STGD3NB60K STGD3NB60KT4 STGP3NB60K STGP3NB60KD STGP3NB60KDFP GD3NB60K GP3NB60K L4914
Contextual Info: STGP3NB60K - STGD3NB60K STGP3NB60KD-STGP3NB60KDFP-STGB3NB60KD N-CHANNEL 3A - 600V - TO-220/DPAK/D2PAK PowerMESH IGBT TYPE STGP3NB60K STGD3NB60K STGP3NB60KD STGP3NB60KDFP STGB3NB60KD • ■ ■ ■ ■ ■ ■ VCES 600 600 600 600 600 VCE sat (Typ) @125°C

SKiM63

Abstract: SKIM 63
Contextual Info: SKiM606GD066HD Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 175 °C 600 V Ts = 25 °C 641 A Ts = 70 °C 512 A 600 A ICnom ICRM VGES SKiM 63 tpsc Trench IGBT Modules SKiM606GD066HD Tj ICRM = 2xICnom VCC = 360 V VGE ≤ 15 V VCES ≤ 600 V

FGT313

Abstract: FGT412
Contextual Info: 2-3 IGBT Selection Guide By VCES VCES V 330 330 400 600 600 600 600 600 600 IC (A) 20 30 20 20 25 30 30 50 50 PC (W) 35 35 35 35 60 60 60 150 150 Part Number Package FGT312 FGT313 FGT412 FGT612 FGM622S FGM603 FGM623S MGD623N MGD623S TO220F(FM20) TO220F(FM20)