IGBT 20N60A4 Search Results

IGBT 20N60A4 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
GT50J123		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 59 A, TO-3P(N)	Datasheet
GT30J122A		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, TO-220SIS	Datasheet
GT30J121		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 30 A, TO-3P(N)	Datasheet
GT20J341		Toshiba Electronic Devices & Storage Corporation	IGBT, 600 V, 20 A, Built-in Diodes, TO-220SIS	Datasheet

IGBT 20N60A4 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
20N60A4 Abstract: 20N60A4 equivalent HGTGN60A4D hg20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4 HGTP20N60A4 Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet April 2013 600 V SMPS IGBT Features The HGTG20N60A4 and HGTP20N60A4 are combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 TA49339. O-220AB 20N60A4 20N60A4 equivalent HGTGN60A4D hg20n60 Commit TA49372 marking 20n60a4 IGBT 20n60a4 igbt fairchild 20n60a4	PDF
20N60A4 equivalent Contextual Info: HGTG20N60A4 Data Sheet November 2013 File Number 600 V SMPS IGBT Features The HGTG20N60A4 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. This IGBT is ideal for many high voltage switching applications operating at high	Original	HGTG20N60A4 HGTG20N60A4 TA49339. O-247 20N60A4 equivalent	PDF
20N60A4D Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339 Contextual Info: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49372 mosfet 20a 300v P channel 600v 20a IGBT LD26 TA49339	PDF
20n60a4d Abstract: HGTG20N60A4D TA49372 Contextual Info: HGTG20N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20n60a4d TA49372	PDF
20n60a4d Abstract: TA49372 20N60A4 HGTG*N60A4D TA49341 HGTG20N60A4D LD26 TA49339 HGTG Contextual Info: HGTG20N60A4D Data Sheet October 1999 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20n60a4d TA49372 20N60A4 HGTG*N60A4D TA49341 LD26 TA49339 HGTG	PDF
20N60A4D Abstract: 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D Contextual Info: HGTG20N60A4D, HGT4E20N60A4DS Data Sheet APRIL 2002 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode This family of MOS gated high voltage switching devices combine the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGTG20N60A4D, HGT4E20N60A4DS 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49372 HGTG20N60A4D 20n60 20N60A HGT4E20N60A4DS TA49339 TA49341 HGTG*N60A4D	PDF
HGTG20N60A4D Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372.	PDF
20N60A4D Abstract: HGTG20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247 Contextual Info: HGTG20N60A4D Data Sheet February 2009 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60A4D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a	Original	HGTG20N60A4D HGTG20N60A4D 150oC. TA49339. TA49372. 20N60A4D 20N60A4 TA49341 TA49339 TA49372 IFM110 LD26 TO247	PDF
20N60A4 Abstract: 20N60A4 equivalent HGTP20N60A4 HGTG20N60A4 HGTG20N60A4D TA49339 TA49372 TB334 IGBT 20n60a4 Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 20N60A4 20N60A4 equivalent HGTG20N60A4D TA49339 TA49372 TB334 IGBT 20n60a4	PDF
20N60A4 Abstract: 20N60A4 equivalent IGBT 20n60a4 HGTG20N60A4 HGTP20N60A4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26 Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet December 2001 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 200kHz 125oC 20N60A4 20N60A4 equivalent IGBT 20n60a4 TA49372 20N60A mosfet 20a 300v HGTG20N60A4D LD26	PDF
20N60A4 Abstract: 20N60A4 equivalent TA49339 Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet October 1999 File Number 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. TA49339. 100kHz 20N60A4 20N60A4 equivalent TA49339	PDF
TA49372 Abstract: 20N60A4 equivalent Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC TA49372 20N60A4 equivalent	PDF
20N60A4 Abstract: 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A HGTG20N60A4 ICE 280 HGTG20N60A4D HGTP20N60A4 LD26 Contextual Info: HGTG20N60A4, HGTP20N60A4 Data Sheet Title GT 0N6 4, GTP N60 bt 0V, MPS ries October 1999 600V, SMPS Series N-Channel IGBTs Features The HGTG20N60A4 and HGTP20N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the	Original	HGTG20N60A4, HGTP20N60A4 HGTG20N60A4 HGTP20N60A4 150oC. 100kHz 20N60A4 20N60A4 equivalent TA49339 IGBT 20n60a4 20N60A ICE 280 HGTG20N60A4D LD26	PDF
Contextual Info: HGT1S20N60A4S9A Data Sheet March 2006 600V, SMPS Series N-Channel IGBTs Features The HGT1S20N60A4S9A is MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of	Original	HGT1S20N60A4S9A HGT1S20N60A4S9A 150oC. 100kHz 200kHz 125oC	PDF