ICBO Search Results

2N5551

Contextual Info: TOSHIBA TRANSISTOR 2N5551 SILICON NPN EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE HIGH VOLTAGE AMPLIFIER APPLICATIONS. . High Collector Breakdown Voltage : VCBO=180V, VcEO=160V . Low Leakage Current : IcBO= 50nA(Max.) @ VcB=120V . Low Saturation Voltage

3SK190

Abstract: SGF19 2SC2814-2 2sk543 cross 2sc2078 2SK715
Contextual Info: High Frequency Transistors Electrical characteristics Ta = 25 deg. C Absolute maximum ratings Device Package type Application lcao max @ Vcb VcBQ VCEO Vebo (V) (V) (V) , te (mA) Pc (mW) J o Icbo max m hFE @ Vce • Ic Vcb (V) h rc f i @ Vce • lc Vce Ip

2N3569

Abstract: 2N3643 TO-105 2N3643 2N3566 2N3642 2N3646 CIL596 2N3567 CIL761 CIL762
Contextual Info: T0-1Ó5 EPOXY PACKAGE TRANSISTORS NPN Type No. VCBO V CEO (V) (V) V EBO (T a = 2 5 ° C , U n l e s s O t h e r w is e S p e c i f ie d ) E le c t r ic a l C h a r a c t e r is t ic s M a x im u m R a t in g s IcBO V CB d •¥ e (MA) (V) Max Min Max

TMPT6429

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 SP RA GU E. ^3 D • 0504330 0003b0L 4 ■ AL6R S E M I C O N D S / ICS 93 D 0 3 6 0 6 J . SMALL-OUTLINE BIPOLAR TRANSISTORS NPN Transistors ELECTRICAL CHARACTERISTICS at TA = 25°C IcBO 40 30 40 60 40 40 25 40 30 25

Contextual Info: Surface-mount Power Transistor Array SPF0001 Tj Tstg Electrical Characteristics Ta=25ºC Unit V V V A A W ºC ºC Symbol Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A

bc 147 transistor

Abstract: transistor BC 547B transistor BC 147 Transistor BC 547, CL 100 bc 104 npn transistor bc 106 transistor transistor BC 337-25 TO106 transistor bc 337-25 transistor transistor BC 147b
Contextual Info: EPOXY TRANSISTORS •• CONTINENTAL DEVICE INDIA 3SE D 0Q0D014 b • T “ 3 i-ty ■ COMMERCIAL/ENTERTAINMENT APPLICATIONS • Device VCEO VCBO VEBO Volts Volts Volts min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA max mW max MA Voits

2n h 2222a

Abstract: transistor 2222a to-92 transistor 2222a transistor 2n 2222 2n 2222A to-92 npn mml 600 pnp 2n 2222 transistor 2N917 33T4
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA 32E D • 23033=14 0000012 5 ■ PROFESSIONAL GRADE APPLICATIONS " VCEO VCBO VEBO Volts Volts Volts min min min Device hFE at bias min/max IC VCE ICM PTA mA Volts mA mW max max PTC W max Cob ts NF ICBO VCE sat fT

SDH02

Contextual Info: SDH02 NPN Darlington With built-in flywheel diode Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C Ratings Unit Symbol VCBO 120 V ICBO VCEO 100 V IEBO VEBO 6 V VCEO 100 IC 1.5 A hFE 2000 ICP 2.5 (PW≤1ms, Du≤10%) A IB

SMD-16A

Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

STA400

Abstract: STA475A STA47
Contextual Info: STA475A NPN Darlington External dimensions D With built-in avalanche diode Absolute maximum ratings Ta=25°C Specification min typ max Ratings Unit Symbol VCBO 100±15 V ICBO VCEO 100±15 V IEBO VEBO 6 V VCEO 85 IC 2 A hFE 2000 ICP 4 (PW≤1ms, Du≤25%)

SDA05

Contextual Info: SDA05 PNP Darlington 3-phase motor drive Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO –60 V ICBO VCEO –60 V IEBO VEBO –6 V VCEO

SDC07

Contextual Info: SDC07 NPN Darlington 3-phase motor drive Absolute maximum ratings External dimensions E Electrical characteristics Ta=25°C ••• SD (Ta=25°C) Specification min typ max Symbol Ratings Unit Symbol VCBO 60 V ICBO VCEO 60 V IEBO VEBO 6 V VCEO 60 IC 4 A

STA308A

Abstract: sta308 STA300
Contextual Info: STA308A Absolute maximum ratings PNP Darlington General purpose External dimensions C Ta=25°C Specification min typ max Ratings Unit Symbol VCBO –120 V ICBO VCEO –120 V IEBO VEBO –6 V VCEO –120 IC –4 A hFE 2000 –1 A VCE(sat) –1.5 V VBE(sat)

STA302A

Abstract: STA300
Contextual Info: STA302A Absolute maximum ratings PNP Darlington General purpose/3-phase motor drive Ratings Unit Symbol VCBO –50 V ICBO VCEO –50 V IEBO VEBO –6 V VCEO –50 IC –4 A hFE 1000 ICP –8 PW≤10ms, Du≤50% A VCE(sat) W 15 (Tc=25°C) Tj 150 °C Tstg

Contextual Info: Maximum Ratings Type No. VCBO ^CEO VEBÓ Electrical Characteristics Ta=25"C, Unless Otherwise Specified - (V) Min (V) Min (V) Min Pd 'c <W) (A) 6Tc=25°c 2N3702 40 25 5 0.625 0.6 2N3905 40 40 5 0.625 0.2 IcBO ^CB tas VCE (mA) e (V) (mA) 0 (V ) Max Max Min

Contextual Info: Small Signal Transistors TO-18 Case Continued TYPE NO. DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V @ lc hFE BVCBO BVCEO b v e b o ICBO @ VCBO (mA) (V) MIN e VCE VCE(SAT) @ 1C Cob (V) MAX (V) (mA) MAX (pF) fT NF ton (MHZ) (dB) (ns) MAX MIN

Contextual Info: Lf5E D ITOS H ^0^7250 001775^ 0 TOSHIBA TRANSISTOR 2N4126 SILICON PNP EPITAXIAL TYPE PCT PROCESS 'T TOSHIBA (DISCRETE/OPTO) Unit in mm FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcBO=“50nA(Max.) @ VcB*-20V

transistor 2n5550

Abstract: 2N5550
Contextual Info: SEMICONDUCTOR 2N5550 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES High Collector Breakdwon Voltage : VCBO=160V, VCEO=140V N E K Low Leakage Current. G D J : ICBO=100nA Max. , VCB=100V

2N4033

Abstract: 2N4358 2N4890 2N4032 2N4036 2N4037 2N4046 2N4047 2N4234 2N4235
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) *TYP *TYP *TYP *TYP *TYP MAX MAX *ICEO *ICES *ICEV *ICER

2N5189

Abstract: 2N4930 2N4931 2N4943 2N4960 2N5022 2N5023 2N5058 2N5059 2N5109
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE (V) @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP *TYP *TYP *TYP MAX *ICEO *ICES *ICEV

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP

transistor BC170

Abstract: BC170C TRANSISTOR BC170B BC170B BC170 transistor BC170c BC170A BC170 TRANSISTOR bc172 bc174b
Contextual Info: IL TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2N5S15 Electiical Characteristics (Ta=25°C, Unless Otherwise Specified) 'c ^CBO ^CEO ^EBO Po (W) (V) (V) (V) (A) ,/in Min Min Tc=25°c 250 250 6 0.625 0.5 9 IcBO VCB ^CES ^CE W @ (V) M

FM20

Abstract: FN812
Contextual Info: Power Transistor FN812 ICBO IEBO VCEO hFE VCE sat (Ta=25ºC) Unit µA µA V Ratings 10max 10max 100min 70min 0.3max External Dimensions FM20 (full-mold) 10.0 V a b Typical Switching Characteristics VCC (V) 12 RL (Ω) 4 IC (A) 3 VBB1 (V) 10 VBB2 (V) –5

2sc897 hitachi

Abstract: nec 2sd218 2sd316 2sd188 nec 2SA1103 SANKEN NEC 2SB618 2SC897 nec 2sa649 2sb618a RCA1B06
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CEO on PD Max hFE «T ON) Min (Hz) r ICBO Max (A) (CE)sat Max (s) Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . . . .15 .