IC EB 5 Search Results

Contextual Info: S E M IC O N D U C T O R tm 100350 Low Power Hex D-Latch General Description Features The 100350 contains six D-type latches with true and complement outputs, a pair of common Enables Ea and Eb , and a common Master Reset (MR). A Q output follows its_D input when both Ea and Eb are LOW. When either Ea or Eb

QM100TF-HB

Abstract: QM20TD-H QM20TD-HB QM20KD-HB TX-IA QM30 QM30TB-24 QM30TB-2H QM30TB-2HB QM30TX-H
Contextual Info: 264 - - h ^ i f a - ;U [N P N , a 'i -y v ] I c— 1 A, V eb — 2 V , ft VcBO £ V C EX SUS # ÉPÜVCEX m * V EBO Ic I FM I s (A ) (A ) V i. m ) (A ) (W ) CC) (A ) T .i, Ti (£ 3 ) rc> (V ) % V CE V EB (m A ) ft (V ) (V ) ft * V EB X (V ) (V ) ft /J'

Contextual Info: HIGH POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Value Symbol Rating 120 Collector-Emitter Voltage ^CEO 140 Collector-Base Voltage ^CBO 6 Emitter-Base Voltage ^EB 50 Collector Current - Continuous Ic 100 - Peak 20 Base Current Ib Total Device Dissipation

KTN2907AS

Abstract: KTN2907S KTN2907AS SOT-23 KTN2907S SOT-23
Contextual Info: KEC SEMICONDUCTOR KTN2907S/AS KOREA E LE C T R O N IC S CO.,LTD. T E C H N IC A L D A T A EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx=-50nA M ax. ; V Ce =-30V, V eb=-0.5V. DIM

2N3904S

Abstract: 2N3906S 2N3904S SOT-23 2N3906S SOT-23 2N3904 ph-13 transistor 1N916 20MS
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3904S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES : ICEx=50nA Max. , IBL=50nA(M ax.) V eb=3V. Excellent DC Current Gain Linearity. Low Saturation Voltage : VcE(sat)=0.3V(Max.) @Ic=50mA, lB=5mA.

STP5508

Contextual Info: STP5508 HIGH POWER NPN SILICON TRANSISTOR MAXIMUM RATINGS Value Symbol Rating 120 Collector-Em itter Voltage ^CEO 140 Collector-Base Voltage VcBO 6 Emitter-Base Voltage ^EB 50 Collector C u rren t - Continuous Ic 100 - Peak 20 Base C urrent Ib Total Device Dissipation

Contextual Info: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N TELEPHONE: 973 376-2922 (212) 227-0005 FAX-(973) 376-3980 5633 HIGH VOLTAGE-HIGH-POWER NPN SILICON TRANSISTORS "MAXIMUM RATINGS Riling Symbol 2MG633 Unit VCEO 120 Vdc VCB V EB ic 120 Vdc 7,0 Vdc Collector-emitter Voltage

KN3903S

Abstract: KN3905S
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KN3903S EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES DIM • Low Leakage Current • Ic E x = 5 0 n A M a x . , @ V ce -3 0 V , V eb -3 V . • Low Saturation Voltage : V cE (sat)=0.3V (M ax.)

Contextual Info: DATA SHEET Tentative Part No. NN30311A Package Code No. ⎯ Publication date: July 2012 Ver. EB 1 NN30311A NN30311A (Tentative) 6A Synchronous DC-DC Step down Regulator comprising of Controller IC and Power MOSFET „ Overview NN30311A is a synchronous DC-DC Step down Regulator (1-ch) comprising of a Controller IC and two Power MOSFET,

Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906U EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.

2N3906 hie

Abstract: 1N916 2N3904 2N3906 KEC 2N3906
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.

1N916

Abstract: 2N3904C 2N3906C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA 2N3906C EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : Ic E x = -5 0 n A M a x . , lB L = ~ 5 0 n A (M ax .) @ V Ce = -3 0 V , V eb = -3 V . • Excellent DC Current Gain Linearity.

Contextual Info: HIP6021 S em iconductor F eb ru ary 1999 D ata S h eet Advanced PWM and Triple Linear Power Controller The HIP6021 provides the power control and protection for four output voltages in high-performance, graphics intensive microprocessor and computer applications. The IC

Contextual Info: SSE D • 7=^0741 OODO'IDT DÜ7 Silicon PN P Epitaxial Planar H S AK J ■ ^3 2SA1294 Application Example : Unit V -5 V Ic -1 5 Ib -4 Ie b o V eb= -5 V — lOOmax „A V BR CEO Ic —230min V hFE A = -2 5 m A = —5 A , 40min VcE(sat) lo fT V c e = - 1 2 V , Ie = 2 A

2n3298

Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
Contextual Info: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max

tic 1060

Contextual Info: Panasonic Aluminum Electrolytic Capacitors/EB Aluminum Electrolytic Capacitors Radial Lead Type M in ia tu riz a tb n ForE ictonfc Ba]fest (Hgh Volage) C ic u it fcr contro] (Low V olage) F e a tm ss Life tm e : 105 CC 5000 - lOOOOh JncJude Low Profite p ro d u c ts

Contextual Info: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.

Contextual Info: pm ui sn hi ab tu ut rt eo n c is rwc i ut ic t h eb so a r d p r o d u c t s Series 034 – TO-5 Miniature PCB Mount actual size Features Electrical Characteristics • Circuit: SPST-NO momentary Life Expectancy: In excess of 1,000,000 actuations • Gold contacts

Contextual Info: Tem ic HM 65799 Semi co nd u ct o rs 64 K X 4 with OE High Speed CMOS SRAM Short description. Please refer to the full datasheet available on T EM IC w eb for detailed technical inform ation. Description The HM 65799 is a high speed C M O S static RA M organized as 65,536 x 4 bit. It is m anufactured using

uei 350

Abstract: K 3567 MMBT3568 MMBTA05 MMBTA06 MMBTA42 MMBTA43 mmbt
Contextual Info: Surface Mount Transistors Medium Power—NPN VCER* VCEO V Min V eb o (V) Min MMBT3568 TO-236 (49) 80 60 5 Its MMBT3700 TO-236 (49) 140 Type No. Case Style 80 7 »T Ic e s * C0b *oft NF VCE(SAT) V b E(SAT) Test Process (MHz) @ lc •cBOa VCB hre lc & VCE

Contextual Info: SANKEN ELECTRIC CO LT» 2 D000S3Ô 3 ^ S A K J 3SE D POWER TRANSISTORS Note I2SA TYPE Pc VcBO VCEO V eb o 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 2SA1386 1386A 2SA1488 1488A ( T a = 2 S 'C ) Ic Ib Tj (V) (A) (A) CC) -5 -10 -2 150 150 -160 -160 - 5

Contextual Info: GaAs 1C 35 dB Voltage Variable Attenuator Single Positive 3 V Control 0.5-2.5 GHz EB Alpha AV106-12 Features SOIC-8 • Single Positive +3 V Control Voltage ■ 35 dB Attenuation Range @ 0.9 GHz ■ Excellent Linearity Performance Description The AV106-12 GaAs IC FET voltage variable attenuator

BFY50 equivalent

Abstract: 2n2222 texas instruments CV7756 bfy51 equivalent CV7735 BFY52 equivalent equivalent of 2n2222 2N2222 npn small signal current gain 2n2222 equivalent 2n2484 2n2222 ti
Contextual Info: Discrete Semiconductors T exas In s t r u m e n t s Absolute Maximum Rating hFE at Collector Current CV Number Commercial Case Equivalent Outline Polarity VC B VCE V eb hFE V V V hFE Ic Min. fT MHz Converted to BS9300 Small Signal Planar CV continued Comments

NPN transistor 2n2222A plastic package to116

Abstract: SP3725QDB BT2907A 2N5146 2N3244 2N3245 2N3252 2N3253 2N3444 2N3467
Contextual Info: Transistors Cont. Discrete Devices Space Saving Devices Maximum Ratings Electrical Characteristics @ 25° C Am bient P q Type Polarity One Both Side Sides mW mW VCB Volts Vce Volts V eb Volts Min/Max Frequency V c e (Sat) @ i c /i B H f e @ ic mA Volts Package