KTN2222A Search Results

2222A

Abstract: transistor 2222a data sheet transistor 2222a KTN2222A 2222A transistor
Contextual Info: SEMICONDUCTOR KTN2222A MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking KTN 1 2222A 016 3 No. Item Device Name Lot No. 2003. 3. 3 Revision No : 1 2 Marking Description KTN Series Name 2222A Device Name 016 Year 0~9 : 2000~2009

ZG SOT-23

Abstract: ZG SOT23 KTN2222AS SOT-23 MARKING ZG SOT-23 KTN2222AS marking zg MARKING ZG sot 23 zG j1 zg marking sot 23 zG
Contextual Info: SEMICONDUCTOR KTN2222AS MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 1 ZG 2 1 Item Marking Description Device Mark ZG KTN2222AS hFE Grade - - * Lot No. 01 2002. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

marking zg

Contextual Info: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H ・Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

KTN2222ae

Abstract: MARKING ZG KTN2907AE
Contextual Info: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

mark ZG

Abstract: KTN2222AU
Contextual Info: SEMICONDUCTOR KTN2222AU MARKING SPECIFICATION USM PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 ZG 1 2 Item Marking Description Device Mark ZG KTN2222AU hFE Grade - - * Lot No. 01 2006. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES 2004. 1. 29 Revision No : 0 1/4

marking zg

Abstract: KTN2222AE KTN2907AE
Contextual Info: SEMICONDUCTOR KTN2222AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D H Low Saturation Voltage G A 2 1 3 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

KTN2222U

Contextual Info: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G Low Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

KTN2222AS

Abstract: KTN2222S KTN2222AS SOT-23
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTN2222S/AS EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcEx-10nA M ax. ; V ce-60V , V eb(off)-3V. • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150mA, lB=15mA.

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)

khb*9D5N20P

Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
Contextual Info: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC

CHINA TV FBT

Abstract: transistor 2N3906 smd 2A SOT23 TS4B05G transistor 2N3904 smd 2A SOT23 fbt tv KIA7812API KIA431A transistor transistor KIA431A CHINA TV uoc 2N60 MOSFET SMPS
Contextual Info: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For CRT TV http://www.keccorp.com Sales Engineering G Contact to: ijm@kec.co.kr Tel: +82-2-2025-5260 (H.P: +82-19-693-2580 ) 2005. 11. SALES ENGINEERING GROUP REV 3.3 1 KEC Products for CRT TV

KTN2222

Abstract: 2222A npn KTN2222A
Contextual Info: SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A ・Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. N ・Low Saturation Voltage K : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

LM8550

Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
Contextual Info: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo

KTN2222AU

Abstract: KTN2222U
Contextual Info: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ・Low Leakage Current D A 3 1 G ・Low Saturation Voltage J 2 : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

KTN2222AU

Abstract: KTN2222U FC100H
Contextual Info: KEC SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : I c E x - 1 0 n A M a x . ; V c e = 6 0 V , V e b (o ff ) - 3 V .

KTN2222AU

Abstract: KTN2222U 1k31
Contextual Info: SEMICONDUCTOR KTN2222U/AU TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B M M ᴌLow Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. D 3 1 G ᴌLow Saturation Voltage J A 2 : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

KTN222S

Abstract: KTN2222AS KTN2222S marking cox
Contextual Info: ¿s\ I n ter n a tio n a l W S em ico n d u cto r, In c . KTN2222S/AS E P IT A X IA L P L A N A R NPN T R A N S IS T O R GENERAL PURPOSE APPLICATAIONS SWITCHING APPLICATIONS SOT-23 FEATURES • Low Leakage C urrent: lCEX = 10 mA Max, V CE = 60 Volts, V EB 0FF =3 V o lts

MN1280

Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
Contextual Info: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor

transistor 2222a data sheet

Abstract: transistor 2222a data sheet to-92 2222A to-92 npn 2n2222 to-92 2222a NPN transistor 2222a 2222A Transistor 2N2222 Datasheet transistor 2222a to-92 npn 2907A
Contextual Info: SEMICONDUCTOR KTN2222/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES A Low Leakage Current : ICEX=10nA Max. ; VCE=60V, VEB(OFF)=3V. Low Saturation Voltage N K : VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 kta949 2SC3192 C4369 2SC3226 2Ns551
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No ^ FE - Applications (T Y P M IN (m W ) Ic Iß (V) (mA) (V) <mA) (mA) 6 1 - - (M H z ) V CT. (V) (550) 6 V CE •e f (mA) (dB) (V) (mA) (M H z ) I 5.0 6 - 1 Ic 20 100 40^200 6 1 - — — (550)

Contextual Info: SEMICONDUCTOR TECHNICAL DA TA KTN2222U/AU EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Low Leakage Current : IcE x-10nA M ax. ; V ce-6 0 V , V eb(off)-3V . • Low Saturation Voltage : VcE(sat)=0.3V(Max.) ; Ic=150m A , lB=15mA.

2sc3205

Abstract: 2SC3207 KTC2075 2SC3228 2SA1273 2SC3194 2sc3226 C4369 kta949 2sc3192
Contextual Info: Maximum Ratings Electrical Characteristics T a - 2 5 0O Type No V CEO A M RF 30 20 fT (T Y P M IN MAX NF (m W ) ^CE (V) (mA) (V) Ic <mA) Iß (mA) (M H z ) V CT. (V) 6 1 - - - (550) 6 V CE (V) (dB) I 5.0 6 - 1 100 50 TO-92(M) F5 50 TO-92(C) F3 6 - 1 100

Contextual Info: SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. ; VCE=-30V, VEB=-0.5V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.