15QMA Search Results

i5b2

Contextual Info: Preliminary KM23C16005DG CMOS MASK ROM 16M-Blt 2Mx8 /1Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 2,097,152 x 8(byte mode) 1,048,576 x 16{word mode) • Fast access time Random Access: 100ns(Max.) Page Access : 30ns(Max.)

Contextual Info: 2N2907 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECH N ICA L DATA PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Conpbment to 2N2222 * Collector-Emitter Voltage VCEO=-40V * Collector Dissipation Pc=625mW Ta=25°C * Hjgh Collector Current I c ^ ) =-600mA

l200c

Abstract: 25AP ZPB53BL200C
Contextual Info: POSITIVE THERMISTORS “Posi-R” • n ic R ic o n For D eg a u ss in g C irc u it in C olor T V Z P B 31B L5R 0R ZPB 31B L7R 0B ZPB45BL100J A Posi-R fo r a d e g a u s s in g c ir c u it in c o lo r TV, u s in g c o m m e r c ia l fre q u e n c y as a p o w e r so u rc e , is a p p lic a b le to e ith e r s in g le -e le m e n t

Contextual Info: MITSUBISHI TRAN SISTOR M O D U LES ! HIGH POWER SWITCHING U SE INSULATED TYPE f QM75DY-HB I j QNI750Y-HB • Ic • Vcex Collector current.75A Collector-emitter voltage. 600V • hFE DC current gain. 750

Bfy51

Contextual Info: bTE T> m bbS3T31 DDSTTTD A3D H A P X 11 N AMER PHILIPS/DISCRETE II BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO-39 metal envelopes intended for general purpose industrial applications. QUICK REFERENCE DATA BFY50 Collector-base voltage open emitter

BFY51

Abstract: BFY50 LT150 LEM BFY50-BFY51-BFY52 BFY50-BFY51 JFY52 BS944 BFY501 BFY52 J100
Contextual Info: II b^E J> m bbSB^l □ □2 7 7 ‘iD fl3D IAPX A N AMER PHILIPS/DISCRETE BFY50 BFY51 BFY52 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in TO -39 m etal envelopes intended fo r general purpose in d u stria l applications. Q U IC K R E F E R E N C E D A T A

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

bc536

Abstract: bc537
Contextual Info: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS -s- -i 4; jé . THE BC537» BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528

n02a

Abstract: lts 543 series pin diagram n03B
Contextual Info: 19-1414; Rev0; 1/99 > k l> JX I> k l Fault-P rotected, High-Voltage S i n g l e 8-to-1 / D u a l 4-to-1 M u l t i p l e x e r s _ F e a t u r e s The MAX4508/MAX4509 are 8-to-1 and dual 4-to-1 faultprotected m ultiplexers that are pin-com patible with the

BC537

Abstract: BC538 BC527 BC528
Contextual Info: BC 537 • BC 538 NPN SILICON AF MEDIUM POWER TRANSISTORS THE BC537, BC538 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC537, BC538 ARE COM­ PLEMENTARY TO THE PNP TYPE BC527, BC528

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.