IC 810 DATASHEET Search Results

AZ810NLTR

Abstract: marking n2c sot AZ809NLTR markingn2csot
Contextual Info: Preliminary Datasheet 3-PIN MICROPROCESSOR RESET CIRCUITS AZ809/AZ810 General Description Features The AZ809/810 microprocessor supervisory circuits can be used to monitor the power supplies in microprocessor and digital systems. They provide a reset to the

ic8085

Abstract: MCS103 BGY110F ferroxcube Ee core IC808 MCB088 905-890 BGY11 uhf amplifier UHF amplifier module
Contextual Info: N AUER PHILIPS/DISCRETE rnmps uomponents Datasheet status Product specification date of issue May 1991 bTE ]> • 1^ 33^31 DD302bû 347 * A P X BGY110D/BGY110E/BGY110F UHF amplifier modules DESCRIPTION MECHANICAL DATA The BGY110 is a four-stage UHF amplifier module, primarily designed

TPS3809

Abstract: reset IC sot25 SOT-23R APX809 APX823 w6 SOT 23 APX810 APX824 APX825A MAX825
Contextual Info: Diodes, Inc.’s New Product Announcement, May 2, 2008 Microprocessor Supervisory and Re-set ICs for Digital Systems Designed for Microprocessor or Microcontroller based electronic systems:

Contextual Info: MIC809/810 Microprocessor Reset Circuits General Description Features The MIC809 and MIC810 are inexpensive microprocessor supervisory circuits that monitor power supplies in microprocessor-based systems. • Precision voltage monitor for 3V, 3.3V, or 5V power

Contextual Info: October 1989 Edition 2.0 FUJITSU DATASHEET MBM10494-7/-8 65536-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10494 is fully decoded 65536-bit ECL read/write random access memory designed for high-speed scratch pad, control and buffer storage applications. The device

FPT-24CC02

Contextual Info: October 1989 Edition 1.0 FUJITSU DATASHEET : MBM10A474-3 4096-BIT BIPOLAR ECL RANDOM ACCESS MEMORY DESCRIPTION The Fujitsu MBM10A474 is fully decoded 4096-bit ECL read/Write random access memory designed for high-speed scratch pad, control and buffer storage applications.

CIRCUIT DIAGRAM FOR IC 810

Abstract: ic 810 pin diagram IC 810 datasheet MIC809 MIC809-5 MIC809JU MIC809LU MIC809MU MIC809RU MIC809SU
Contextual Info: MIC809/810 Micrel MIC809/810 Microprocessor Reset Circuits Final Information General Description Features The MIC809 and MIC810 are inexpensive microprocessor supervisory circuit that monitors power supplies in microprocessor based systems. The function of this device is to assert a reset if either the

Contextual Info: SIEMENS CG Y 52 GaAs MM IC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation *Chip fully passivated * Operating voltage range: 2.7 to 5 V *50 Q. input / output 3 ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: FUJITSU MICROELECTRONICS S3E D • 3 7 4 T ? b 2 OOOflbll ñ cP October 1989 Edition 1.0 FUJITSU DATASHEET' M B M 1 0 4 8 6 R R -13 r^ U -z z -o s 16384-B IT BIPOLAR SELF-TIMED RAMDOM ACCESS MEMORY DESCRIPTION n ie Fujitsu MBM10486RR-13 is futfy decoded 16384-bfl ECL self-timed readVrrite random

x16 3 marking -ddr -sdram -rimm -sram -flash -m

Abstract: CGY52 Q68000-A8615 mmic-amplifier 7CH150
Contextual Info: SIEMENS GaAs MM IC CGY 52 Datasheet * Two stages monolithic microwave 1C MMICAmplifier * All gold metallisation *C h ip fully passivated •O perating voltage range: 2.7 to 5 V *5 0 Q input / output ESD: Electrostatic discharge sensitive device, observe handling precautions!

telephone ring led indicator

Abstract: LXCL-PWF1 PIC LED LTC3453 DC810
Contextual Info: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 810 HIGH EFFICIENCY BUCK-BOOST FLASH LED DRIVER LTC3453 DESCRIPTION Demonstration circuit 810 is a high efficiency buckboost flash LED driver featuring the LTC 3453 and the LXCL-PWF1 Lumileds Luxeon Flash. The board is

5101as

Abstract: L5101 high speed mosfet driver LM5101 1299 mosfet LM510X L5101AM
Contextual Info: LM5100/LM5101 High Voltage High Side and Low Side Gate Driver General Description The LM5100/LM5101 High Voltage Gate Drivers are designed to drive both the high side and the low side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of

CGY52

Abstract: Q68000-A8615 MMIC marking code 52 23/MMIC marking code 52
Contextual Info: CGY 52 GaAs MMIC Datasheet * Two stages monolithic microwave IC MMICAmplifier * All gold metallisation * Chip fully passivated * Operating voltage range: 2.7 to 5 V

mmic marking L

Abstract: diode bzw 06 26 Q68000-A4444 Siemens MMIC A444 VCE05181 marking code 016 MMIC MMIC marking code 132 ,Siemens ceramic Capacitors MMIC marking code U
Contextual Info: SIEMENS CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave 1C MMICam plifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz * Bandwidth: 3 GHz typ. @ -3 dB, VSWR < 2 : 1 * Operating voltage range: 3 to 5.5 V

MMIC SOT 143 marking CODE 77

Abstract: MARKING SOT-143 C5
Contextual Info: SIEMENS CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 i2 gain block * Application range: 100 MHz to 3 GHz * IP3 30 dBm typ. @ 1.8 GHz * Gain 8.5 dB typ. @ 1.8 GHz * Low noise figure: 3.0 dB typ @ 1.8 GHz

CGY62

Abstract: Q68000-A8787 HL 941
Contextual Info: CGY 62 GaAs MMIC Datasheet * Two-stage microwave broadband amplifier IC * 50 Ω input / output * Operating voltage range: 2.7 to 5 V * High gain and output power

MMIC SOT 143 marking CODE 77

Abstract: cgy50 Q68000-A8370 SIEMENS MMIC mmic marking L mmic HL 30 MARKING SOT-143 C5 siemens rs 806
Contextual Info: CGY 50 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Cascadable 50 Ω gain block * Application range: 100 MHz to 3 GHz

12v transformer

Abstract: hi-pot transformer
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Toplogy: Forward and Flyback Electrical Specifications @ 25°C - Operating Temperature -40°C to +130°C 126.7µH ±10% Lk. Inductance

marking code 016 MMIC

Abstract: RS 302 440 40 mmic marking L A444 CGY40 Q68000-A4444 mmic code marking P 18 MMIC marking code 132 MMIC marking CODE c4 MMIC marking CODE 06
Contextual Info: CGY 40 GaAs MMIC Datasheet * Single-stage monolithic microwave IC MMICamplifier * Application range: 100 MHz to 3 GHz * Gain: 9 dB typ. @ 1.6 GHz * Low noise figure: 2.7 dB typ. @ 1.6 GHz

480UH

Abstract: 9V-50V PA136
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted

Contextual Info: HIGH FREQUENCY WIRE WOUND TRANSFORMERS EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 DCR Hi-Pot K1 Factor

PA2369NL

Abstract: PA2466 PA2369 PA2437 hi-pot transformer PA2431NL 480UH
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted

PA2467NL

Abstract: PA1269 PA2369NL PA2194NL PA1136 pa2467 PA2297NL PA2369 PA136 PA232
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: Up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Topology: Forward and Flyback Electrical Specifications @ 25°C — Operating Temperature -40°C to 130°C 5 3-4 (3-4) with (10,9,8,7) shorted

hi-pot transformer

Abstract: HI-POT HI-POT transformers 9 pin pulse transformer
Contextual Info: High Frequency Wire Wound Transformers EP13 Platforms - SMT Power Range: up to 60W Height: 12.7mm Max Footprint: 17.7mm x 14.0mm Max Toplogy: Forward and Flyback Electrical Specifications @ 25°C - Operating Temperature -40°C to +130°C 126.7µH ±10% Lk. Inductance