IC 701 Search Results

MARKING W2 SOT23 TRANSISTOR

Abstract: ta 8268 sot-23 transistor p2 marking MARKING W3 SOT23 TRANSISTOR sot23 Transistor marking p2 3543 amplifier 2SC2712LT1 2SC2712L MARKING d4 npn sot23 sot-23 Marking LG
Contextual Info: 2SC2712LT1 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. * High Voltage and High Current: Vceo=50V,Ic=150mA Max. Package:SOT-23 * Excellent hFE Linearity: hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.)

Contextual Info: Ordering number : EN7185C LA1845N Monolithic Linear IC Single-Chip Tuner IC for Home Stereo IC http://onsemi.com Overview The LA1845N is designed for use in mini systems and is a single-chip tuner IC that provides electronic tuning functions using SD/IF-count technigue. It incorporates a pilot canceler and an adjustment-free MUX VCO circuit, thus allows

transistor toshiba marking hf

Abstract: 2SA1162 2SC2712
Contextual Info: 2SC2712 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC2712 Unit in mm AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS. • High Voltage and High Current : V0EO-5OV, Ic = 150mA (Max.) Excellent hjpg Linearity : hFE (Ic = 0.1mA) / hFE (Ic = 2mA) = 0.95 (Typ.)

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1266L EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES • Excellent Iif e Linearity : hFE 2 =80(Typ.) at V Ce = -6V, Ic=-150m A • hFE(Ic=0.1mA)/hFE(Ic=2mA)=0.95(Typ.). • Low Noise : NF=0.2dB(Typ.). f=(lkHz).

2SC5343

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC5343 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Excellent hFE Linearity : hFE(2)=100(Typ) at VCE=6V,IC=150mA : hFE(IC=0.1mA)/ hFE(IC=2mA)=0.95(Typ). z Low Noise: NF=10dB(Typ). At f=1KHZ.

AXP 209 IC

Abstract: sem 2105 16 pin AXP 202 AEG T 51 N 1200 77480 48409 IC SEM 2105 Pioneer PA 0016 94-4033 sem 2105
Contextual Info: Tem ic Sales Offices Semiconductors Addresses Europe Poland Sweden TE M IC TELEFU N K EN m icroelectronic Gm bH Theresienstrasse 2 74072 H eilbronn Postfach 3535, PLZ 74025 Tel: 49 7131 67 3737 Fax: 49 7131 672444 TEM IC TE LE FU N K E N m icroelectronic Gm bH

epson lcd

Abstract: ECM-A1010 LCD EPSON ECM SKQC sy-10 sensor de current SY25 TD-270231 EPSON ECM A1010 MPU 9150
Contextual Info: X SPECIFICATION ECM-A1010 Omaha/Amps SEIKO EPSON CORPORATION LCD DIVISION EPSON ECM-A1010 (Rev. 0) LCD DIVISION 1 ot 28 1. B A S IC S P E C IF IC A T IO N S . . .2 1.1. D isplay S p e c if ic a t io n s . .

Contextual Info: Ambient Light Sensor IC Series Analog Current Output Type Ambient Light Sensor IC BH1620FVC ● Descriptions BH1620FVC is an analog current output ambient light sensor. This IC is the most suitable to obtain the ambient light data for adjusting LCD and Keypad backlight of Mobile phone for power saving and better visibility

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA1266 e p it a x ia l p la n a r pnp t r a n s i s t o r GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFF Linearity : hFF 2 =80(Typ.) at VCe=-6V, Ic=-150mA • hFE(Ic-0.1mA)/hFE(Ic-2mA)=0.95(Typ.).

TFK U 3212 M

Abstract: TFK U 3212 telefunken rc 890 cd LIN 5642 G tfk 623 ta 8659 cn str f 6268 cd 3313 eo PEX 8603 ORP 12
Contextual Info: Tem ic Sales Offices S e m i c o n d u c t o r s Addresses Europe Denmark T E M IC D ansk c /o A E G Industri A/S R oskildevej 8 -1 0 2 620 A lbeitslund Tel: 45 4 2 6485 22 Fax: 45 43 6262 28 T E M IC T E L E F U N K E N m icro ­ electro n ic G m bH K ruppstrasse 6

Inverter high voltage power transistor

Abstract: 2SB825 2SD1061
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB825 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1061

2SB1018A

Abstract: 2SD1411A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB1018A DESCRIPTION •Low Collector Saturation Voltage: VCE sat = -0.5V(Max)@IC= -4A ·High Current Capability- IC= -7A ·Complement to Type 2SD1411A APPLICATIONS ·High current switching applications.

2SB827

Abstract: 2SD1063
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB827 DESCRIPTION •High Collector Current: IC= -7A ·Low Collector Saturation Voltage : VCE sat = -0.4V(Max)@IC= -4A ·Wide Area of Safe Operation ·Complement to Type 2SD1063

2SB829

Abstract: 2SD1065
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB829 DESCRIPTION •High Collector Current: IC= -15A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -8A ·Wide Area of Safe Operation ·Complement to Type 2SD1065

2SB920

Abstract: 2SD1236
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB920 DESCRIPTION •High Collector Current: IC= -5A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -3A ·Complement to Type 2SD1236 APPLICATIONS ·Designed for general purpose large current switching

Contextual Info: KSB564A PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER TO-92 • Complement to KSD471A • Collector Current: IC = -1A • Collector Dissipation: PC = 800mW ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC PC TJ

str f 6456

Abstract: str x 6456 SM 5126 BP STR F 6168 str 6668 STR G 6352 STR 6456 str f 6468 321 CJ 7121 AXP 209 IC
Contextual Info: Tem ic Se ni i co n fi li c t ci Sales Offices rs Addresses Europe France TE M IC France Les Q uadrants 3. avenue du centre B.P. 309 78054 S t.-Q uentin-en-Y veL nes Cedex Tel: 33 I 3060 7000 F a x :33 I 3060 V 11 i Germany TE M IC TE LEFU N K EN m icroelectronic G m bH

Contextual Info: Ill# IC WORKS W184 Six Output Peak Reducing EMI Solution • Outputs may be selectively disabled Features IC WORKS PREMIS family offering Generates an EMI optimized clocking signal at the output Key Specifications Supply Voltages: Selectable input to output frequency

KSD1020

Contextual Info: KSB810 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER TO-92S • Complement to KSD1020 ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC IC PC TJ T STG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

TDA10048HN

Abstract: TDA10048 TDA18271HD tda18271 ID tracking procedure nxp AN604 TDA18211 82750 AN605 tda1004x
Contextual Info: TDA18271HD Silicon Tuner IC Rev. 04 — 19 May 2009 Product data sheet 1. General description The TDA18271HD is a Silicon Tuner IC designed mainly for terrestrial analog and digital TV reception. The TDA18271HD integrates the overall tuning function, including

kp7010

Contextual Info: PRODUCT SPECIFICATION cosmo Photocoupler KP7010 ELECTRONICS CO.,LTD. SHEET 1 OF 5 High Reliability Digital Output IC PHOTO IC Photocoupler • Features 1. High sensitivity. 2. TTL and LSTTL compatible output. 3. Operating supply voltage range. Vcc 4. 5V to 17V

TRANSISTOR 2SA1469

Abstract: 2SA1469 2SC3746
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1469 DESCRIPTION •DC Current Gain: hFE= 70 Min @ (VCE= -2V, IC= -1A) ·Low Saturation Voltage: VCE(sat)= -0.4V(Max)@ (IC= -2.5A, IB= -0.125A) ·Fast Switching Time ·Complement to Type 2SC3746

Contextual Info: STPTIC Parascan tunable integrated capacitor Datasheet - production data Applications • Cellular Antenna tunable matching network in multi-band GSM/WCDMA/LTE mobile phone ST PT IC  Tunable RF filters ST PT IC  Cellular tunable antenna  LTE band tuning

Contextual Info: STPTIC Parascan tunable integrated capacitor Datasheet - production data Applications • Cellular Antenna tunable matching network in multi-band GSM/WCDMA/LTE mobile phone ST PT IC • Tunable RF filters ST PT IC • Cellular tunable antenna • LTE band tuning