IC 5MA TRANSISTOR Search Results

Diode marking CODE 5M

Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

LDTBG12GPLT1G

Abstract: 102k1k marking 20M resistor 20M diode zener
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

20M diode zener

Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Contextual Info: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating

BJW transistor

Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol

102k1k

Abstract: 20M diode zener LDTDG12GPLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

2SB1259

Abstract: 2SD2081 FM20 12v dc to 6v dc
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

DTDG14GP

Abstract: T100 sc-62 zener
Contextual Info: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

zener diode

Abstract: Zener Diode 5A high hfe transistor transistor Ic 1A datasheet NPN digital transistor diode Zener DTDG14GP zener- diode "Zener Diode" TA DIODE ZENER
Contextual Info: Transistors Digital transistor built in resistor and zener diode Driver (60V,1A) DTDG14GP FFeatures 1) High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2) Low saturation voltage, typically VCE(sat) = 0.4V at IC /IB = 500mA / 5mA. 3) Built-in zener diode to protect the

Contextual Info: SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

2N3906-A

Abstract: 2N3906A
Contextual Info: SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.

STD6528S

Abstract: Transistor sot-23 MARKING CODE ZA
Contextual Info: STD6528S Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE sat =0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 Ordering Information Type NO.

Contextual Info: TO SHIBA MT3S07U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U Unit in mm VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure High Gain 2.1 NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz |S2lel2 = 9.5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)

STD6528EF

Abstract: Transistor MARKING CODE SMD IC marking code CB SMD ic MARKING SMD IC CODE SMD code ZB TRANSISTOR SMD MARKING CODE marking code diode Eb SMD SMD MARKING CODE transistor TRANSISTOR SMD MARKING CODE ce
Contextual Info: STD6528EF Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE sat =0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 • Small size SMD package

STN3906S

Abstract: Transistor STN3904S code ja sot
Contextual Info: STN3906S Semiconductor PNP Silicon Transistor Descriptions • General purpose small signal amplifier • Switching application Features • Collector saturation voltage : VCE sat =-0.5V(Max.) @ IC=-50mA, IB=-5mA • Low output capacitance : Cob=4.5pF(Max.) @ VCB=-5V, IE=0, f=1MHz

Contextual Info: TOSHIBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)

2N5031

Abstract: MSC1303
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC

2N3904N

Abstract: 2N3906N T0-92N 2N3906 2N3906 PNP transistor
Contextual Info: 2N3906N Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector-emitter saturation voltage : 0.4V Max. @ IC=-50mA, IB=-5mA • Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz

2n2857 UHF transistor common base amplifier

Abstract: 2n2857 common base amplifier 2N2857 transistor TO-72
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •

2n2857 UHF transistor common base amplifier

Abstract: 2n2857 2n2857 common base amplifier 2n2857 data sheet
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •

LCP02-150B1

Abstract: VDE0433 VDE0878 4565A 110v thyristor cn GP 502
Contextual Info: LCP02-150B1 PROTECTION IC FOR RINGING SLICS A.S.D. FEATURES • ■ ■ ■ ■ ■ Protection IC recommended for ringing SLICs. Wide firing voltage range: from -110V to +95V. Low gate triggering current: IG = 5mA max. Peak pulse current: IPP = 30A 10/1000µs .

KRC285U

Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

2n2857 UHF transistor common base amplifier

Abstract: 2N2857
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •

2N3904N

Abstract: 2N3904 tr 2n3904
Contextual Info: 2N3904N Semiconductor NPN Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector saturation voltage : VCE sat =0.3V(MAX.) @ IC=50mA, IB=5mA • Low collector output capacitance : Cob = 3pF(Typ.) @ VCB=5V, IE=0, f=1MHz