IC 5MA TRANSISTOR Search Results

Diode marking CODE 5M

Abstract: diode 50M marking code LDTBG12GPWT1G transistor collector diode protection RADIO FREQUENCY transistor marking CODE
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPWT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

LDTBG12GPLT1G

Abstract: 102k1k marking 20M resistor 20M diode zener
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTBG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

20M diode zener

Abstract: 102k1k LDTDG12GPT1G SC-89 transistor collector diode protection
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

Contextual Info: Transistors IC SMD Type Product specification 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating

BJW transistor

Abstract: SMD transistor MARKING bjw marking bjw MARKING BJV transistor bjv TRANSISTOR bjw 2SD2351 hFE CLASSIFICATION Marking
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SD2351 Features High DC current gain. High emitter-base voltage. VCBO=12V Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol

102k1k

Abstract: 20M diode zener LDTDG12GPLT1G
Contextual Info: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network LDTDG12GPLT1G zApplications Driver 3 zFeatures 1 High hFE. 300 Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

2SB1259

Abstract: 2SD2081 FM20 12v dc to 6v dc
Contextual Info: 2SD2081 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1259 ICBO VCEO 120 V IEBO VEBO 6 V V(BR)CEO 10(Pulse15) A IC VCB=120V 10max µA 10max mA VEB=6V IC=10mA 120min hFE VCE=4V, IC=5A 2000min V A VCE(sat) IC=5A, IB=5mA 1.5max 30(Tc=25°C)

DTDG14GP

Abstract: T100 sc-62 zener
Contextual Info: DTDG14GP Transistors 1A / 60V Digital Transistor with built-in resistor and zener diode DTDG14GP zExternal dimensions (Unit : mm) zApplications Driver 1.5 2.5 4.0 zFeatures 1) High hFE. 300 (Min.) (VCE / IC=2V / 0.5A) 2) Low saturation voltage, (VCE(sat)=0.4V at IC / IB=500mA / 5mA)

zener diode

Abstract: Zener Diode 5A high hfe transistor transistor Ic 1A datasheet NPN digital transistor diode Zener DTDG14GP zener- diode "Zener Diode" TA DIODE ZENER
Contextual Info: Transistors Digital transistor built in resistor and zener diode Driver (60V,1A) DTDG14GP FFeatures 1) High hFE, typically hFE = 750 at VCE = 2V at IC = 0.5A. 2) Low saturation voltage, typically VCE(sat) = 0.4V at IC /IB = 500mA / 5mA. 3) Built-in zener diode to protect the

Contextual Info: STC2926SF Semiconductor NPN Silicon Transistor Description • UHF/VHF local oscillator Features • High transition frequency : fT = 1.25GHz Typ. @VCE=6V, IC=5mA • Low output capacitance : COb = 0.7pF(Typ.) @VCB=10V Ordering Information Type No. Marking

Contextual Info: SEMICONDUCTOR 2N3904A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Low Saturation Voltage : VCE(sat)=0.3V(Max.) @IC=50mA, IB=5mA.

2N3906-A

Abstract: 2N3906A
Contextual Info: SEMICONDUCTOR 2N3906A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Low Saturation Voltage : VCE(sat)=-0.4V(Max.) @IC=-50mA, IB=-5mA.

STD6528S

Abstract: Transistor sot-23 MARKING CODE ZA
Contextual Info: STD6528S Semiconductor NPN Silicon Transistor Application • Micom Direct drive and switching Application Features • Very low saturation voltage: VCE sat =0.2V (Max.) @ IC=50mA, IB=5mA • High DC current gain: hFE=1000~2500 Ordering Information Type NO.

Contextual Info: TO SHIBA MT3S07U TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07U Unit in mm VH F—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure High Gain 2.1 NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz |S2lel2 = 9.5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC

STN3906S

Abstract: Transistor STN3904S code ja sot
Contextual Info: STN3906S Semiconductor PNP Silicon Transistor Descriptions • General purpose small signal amplifier • Switching application Features • Collector saturation voltage : VCE sat =-0.5V(Max.) @ IC=-50mA, IB=-5mA • Low output capacitance : Cob=4.5pF(Max.) @ VCB=-5V, IE=0, f=1MHz

Contextual Info: TOSHIBA MT3S07S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB ( V C E = 3 V, Ic = 15mA, f = 2GHz)

2N5031

Abstract: MSC1303
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC

2N3904N

Abstract: 2N3906N T0-92N 2N3906 2N3906 PNP transistor
Contextual Info: 2N3906N Semiconductor PNP Silicon Transistor Descriptions • General small signal application • Switching application Features • Low collector-emitter saturation voltage : 0.4V Max. @ IC=-50mA, IB=-5mA • Low collector output capacitance : 4.5pF (Max.) @ VCB=-5V, IE=0, f=1MHz

2n2857 UHF transistor common base amplifier

Abstract: 2n2857 common base amplifier 2N2857 transistor TO-72
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •

2n2857 UHF transistor common base amplifier

Abstract: 2n2857 2n2857 common base amplifier 2n2857 data sheet
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •

LCP02-150B1

Abstract: VDE0433 VDE0878 4565A 110v thyristor cn GP 502
Contextual Info: LCP02-150B1 PROTECTION IC FOR RINGING SLICS A.S.D. FEATURES • ■ ■ ■ ■ ■ Protection IC recommended for ringing SLICs. Wide firing voltage range: from -110V to +95V. Low gate triggering current: IG = 5mA max. Peak pulse current: IPP = 30A 10/1000µs .

KRC285U

Abstract: KRC286U audio transistor KRC281U KRC282U KRC283U KRC284U
Contextual Info: SEMICONDUCTOR KRC281U~KRC286U TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ・High emitter-base voltage : VEBO=25V Min ・High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ・Low on resistance : Ron=1Ω(Typ.) (IB=5mA)

2n2857 UHF transistor common base amplifier

Abstract: 2N2857
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •