IC 575 C2 Search Results

C2235

Abstract: c2235 transistor XXXXX18 Transistor C2235 coev datasheet c2235 transistor
Contextual Info: C2235 Product Description REV C ADSL Line Coupling Transformer Meets the requirements Of IEC60950 & UL1950 For Suppl. Insulation, 250V Working Voltage Customer Terminal #1 Indicator EIA date code and lot code COEV C2235 XXXXX 1 8 2 7 3 6 4 5 [10.92 MAX] 0.430 MAX

C2024 transistor

Abstract: C2024
Contextual Info: C2024 REV D Product Description AC5 Line Coupling Transformer Texas Instruments AC5 ADSL EIA date code and lot code COEV C2024 XXXXX A Coplanar with surface A +0.006"/-0.000" [12.45 MAX] 0.490 MAX Terminal #1 Indicator [10.92 MAX] 0.430 MAX [15.24 MAX] 0.600 MAX

8N100

Contextual Info: IXGA 8N100 IXGP 8N100 IGBT VCES = 1000 V = 16 A IC25 VCE sat = 2.7 V Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30 V I C25

IXGA16N60C2

Abstract: IXGP16N60C2
Contextual Info: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 HiPerFASTTM IGBTs C2-Class High Speed 600V 16A 3.0V 35ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

ID110

Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

PC8236T6N

Abstract: PC8236T6N-E2-A marking 6-PIN PLASTIC TSON HS350
Contextual Info: PRELIMINARY PRODUCT INFORMATION BIPOLAR ANALOG INTEGRATED CIRCUIT PC8236T6N SiGe:C LOW NOISE AMPLIFIER FOR GPS DESCRIPTION The μPC8236T6N is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS. This device exhibits low noise figure and high power gain characteristics, so this IC can improve the

IF110

Abstract: IXGA16N60C2D1 IXGH16N60C2D1 IXGP16N60C2D1
Contextual Info: Preliminary Technical Information VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2D1 IXGP16N60C2D1 IXGH16N60C2D1 HiPerFASTTM IGBTs C2-Class High Speed w/ Diode 600V 16A 3.0V 35ns TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

16N60

Abstract: 16N60C2D1 IXGC16N60C2D1 16N60C2
Contextual Info: Advance Technical Information IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case VCES IC25 VCE sat Electrically Isolated Back Surface tfi(typ) = 600 V = 20 A = 3.0 V = 35 ns D1 Symbol Test Conditions Maximum Ratings

16N60

Abstract: 16N60C2D1
Contextual Info: Advance Technical Information HiPerFASTTM IGBT C2-Class High Speed IGBT IXGA IXGP IXGA IXGP 16N60C2 16N60C2 16N60C2D1 16N60C2D1 VCES IC25 VCE sat = 600 V = 40 A = 3.0 V = 35 ns tfi(typ) D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600

13009

Abstract: C2456 p 13009 transistor 13009 C2456 transistor
Contextual Info: C2456 REV C Product Description Texas Instruments AC5 ISDN Isolation Transformer IEC60950 - 250V Customer Terminal #1 Indicator EIA date code and lot code COEV C2456 XXXXX 0.60±0.03 .024±.001 Coplanar with surface A +0.006"/-0.000" [12.45 MAX] 0.490 MAX

MARKING 6P

Abstract: PC8233TK
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8233TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8233TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain

Contextual Info: Advanced Technical Information IXGA 7N60CD1 IXGP 7N60CD1 HiPerFASTTM IGBT with Diode LightspeedTM Series Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient ±30 V I C25 TC = 25°C

Contextual Info: □ IXYS Advanced Technical Information IGBT IXGA 20N100 IXGP 20N100 V CES = ^C25 V CE sat = 1000 V 40 A 3.0 V Maximum Ratings Symbol Test Conditions V CES VCGR Tj = 25°C to 150°C 1000 V Tj = 25°C to 150°C; RGE = 1 M£2 1000 V V GES Continuous ±20 V

HS350

Abstract: PC8231TK-E2-A PC8231TK
Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT MPC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The MPC8231TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain

re 10019

Abstract: 10019
Contextual Info: ERICSSON í PTE 10019* 63 Watts, 8 6 0 - 9 6 0 MHz L D M O S Field Effect Transistor Description The 10019 is an internally matched comm on source N-channel enhancement-mode lateral MOSFET intended for cellular and GSM applications in the 860 to 960 MHz range. It is rated at 63 watts minimum

Contextual Info: nixYS HiPerFAST IGBT IXGA 24N60A IXGH 24N60A = = = = CES ^C25 vv CE sat t 600 V 48 A 2.7 V 275 ns P relim inary data Symbol Test Conditions vCES Tj = 25°C to 150°C 600 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 600 V vt g e s vGEM Continuous ±20 V Transient

Contextual Info: □ IXYS Preliminary Data Sheet VCES IXGA12N60B IXGP12N60B HiPerFAST IGBT ^C25 600 V 24 A “ VCE sat typ Maximum Ratings Symbol TestConditions V CES Td = 25°C to 150°C 600 V V CGR Td = 25°C to 150°C; RGE = 1 M£2 600 V TO-263 AA (IXGA) v Continuous

574 nec

Abstract: germanium power devices corporation germanium small signal power devices corporation HS350 PC8233TK
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8233TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The μPC8233TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain

BGY210

Abstract: Philips DATA Handbook system UHF amplifier module DCS1800 SC09 2222 030 capacitor philips MSA489 MSA915 BGY21
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BGY210 UHF amplifier module Preliminary specification File under Discrete Semiconductors, SC09 1996 May 13 Philips Semiconductors Preliminary specification UHF amplifier module BGY210 FEATURES PINNING - SOT321B • 6 V nominal supply voltage

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HS350

Abstract: MARKING 6P
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

PC8231TK

Abstract: marking 6K
Contextual Info: BIPOLAR ANALOG INTEGRATED CIRCUIT PC8231TK SiGe:C LOW NOISE AMPLIFIER FOR GPS/MOBILE COMMUNICATIONS DESCRIPTION The PC8231TK is a silicon germanium carbon SiGe:C monolithic integrated circuit designed as low noise amplifier for GPS and mobile communications. This device exhibits low noise figure and high power gain

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

16N60C3

Contextual Info: HiPerFASTTM IGBTs C2-Class High Speed VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA16N60C2 IXGP16N60C2 600V 16A 3.0V 33ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ 600 600 V V VGES