IC 457 DATASHEET Search Results
IC 457 DATASHEET Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
MRMS791B | Murata Manufacturing Co Ltd | Magnetic Sensor | |||
SCC433T-K03-05 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor | |||
SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board | |||
D1U54T-M-2500-12-HB4C | Murata Manufacturing Co Ltd | 2.5KW 54MM AC/DC 12V WITH 12VDC STBY BACK TO FRONT AIR |
IC 457 DATASHEET Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: IMZ4 Datasheet PNP/NPN 500mA 32V Complex Medium Power Transistors lOutline Parameter Tr1 VCEO 32V 500mA IC MAX. SMT6 (4) (5) (6) (3) (2) (1) IMZ4 SOT-457 (SC-74) Parameter Tr2 VCEO -32V -500mA IC(MAX.) lFeatures 1) Both a 2SA1036K chip and 2SC2411K chip in a |
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500mA 500mA OT-457 SC-74) -500mA 2SA1036K 2SC2411K R1102A | |
Contextual Info: IMH21 Datasheet NPN 600mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. lOutline Parameter Tr1 and Tr2 VCEO VEBO IC R1 20V 12V 600mA 10kW SMT6 (4) (3) (2) (5) (6) (1) IMH21 SOT-457 (SC-74) lFeatures 1) Built-In Biasing Resistors |
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IMH21 600mA IMH21 OT-457 SC-74) DTC614T 600mA. R1102A | |
Contextual Info: US6H23 / IMH23 Datasheet NPN 600mA 20V Digital Transistors Bias Resistor Built-in Transistors For Muting. lOutline Parameter VCEO VEBO IC R1 Tr1 and Tr2 TUMT6 20V 12V 600mA 4.7kW (3) (4) (2) SMT6 (5) (4) (6) (3) (1) (2) (5) (6) (1) IMH23 SOT-457 (SC-74) |
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US6H23 IMH23 600mA 600mA OT-457 SC-74) US6H23 DTC643T 600mA. | |
Contextual Info: UMH14N / IMH14A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Tr1 and Tr2 UMT6 SMT6 (6) (4) (5) (5) 50V 100mA 47kW (6) (4) (3) (1) (2) (2) (1) (3) IMH14A SOT-457 (SC-74) UMH14N SOT-353 (SC-88) |
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UMH14N IMH14A 100mA 100mA OT-457 SC-74) UMH14N OT-353 SC-88) | |
Contextual Info: UMH8N / IMH8A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCEO IC R1 Tr1 and Tr2 UMT6 SMT6 (6) (4) (5) (5) 50V 100mA 10kW (6) (4) (3) (1) (2) (2) (1) (3) IMH8A SOT-457 (SC-74) UMH8N SOT-353 (SC-88) |
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100mA 100mA OT-457 SC-74) OT-353 SC-88) DTC114T R1102A | |
HIP5600
Abstract: LED55B/TO LED55B HIP1012A ISL6111 ISL6115 ISL6116 ISL6118 ISL6173
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TB457 ISL6116 ISL6115 HIP1012A ISL6173 ISL6111( ISL6118 HIP5600 LED55B/TO LED55B HIP1012A ISL6111 ISL6115 ISL6116 ISL6118 ISL6173 | |
capa 1206
Abstract: IC M 224
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OCR Scan |
RS481. capa 1206 IC M 224 | |
bt459
Abstract: BT431 BROOKTREE Bt451 Bt439 BL p6d Bt462 Bt458LPJ110 bt458 Bt468 BT457KG110
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OCR Scan |
Bt458 256-Word RS-343A-Compatible 84-pin Bt431, Bt438, Bt439 Bt459, Bt460, Bt462, bt459 BT431 BROOKTREE Bt451 BL p6d Bt462 Bt458LPJ110 bt458 Bt468 BT457KG110 | |
BT458KG135
Abstract: Bt457KG125 bt459 "pin-compatible" BT462 BT451KG80 BT431 BROOKTREE Bt451
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OCR Scan |
RS-343A-Compatible 84-pin Hz/135 Bt451, Bt457, Bt458 L458001 0G32SSfl BT458KG135 Bt457KG125 bt459 "pin-compatible" BT462 BT451KG80 BT431 BROOKTREE Bt451 | |
BLW87Contextual Info: Qs.is.s.u £s,mL- -onau.etoi O' , U na. c/ 20 STERN AVE, SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 BLW87 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: BLW87 is Designed for Class C, 12.5 V High Band Applications |
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BLW87 BLW87 10dBat25W/175MHz | |
CD 1691 CB
Abstract: NEC 7924 NEC D 986 IC - 7434
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OCR Scan |
2SC5013 2SC5013-T1 2SC5013-T2 CD 1691 CB NEC 7924 NEC D 986 IC - 7434 | |
Contextual Info: FZ12 / F0122PA075SC preliminary datasheet flowPHASE0 1200V/75A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 4 Target Applications Schematic ● Motor Drive ● UPS |
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F0122PA075SC 200V/75A FZ122PA075SC | |
Contextual Info: FZ12 / F0122PA075SC01 preliminary datasheet flowPHASE0 1200V/75A Features flow0 housing ● Trench Fieldstop IGBT technology ● 2-clip housing in 12mm and 17mm height ● Compact and low inductance design 4 ● AlN substrate for improved performance Target Applications |
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F0122PA075SC01 200V/75A FZ122PA075SC01 | |
cwi 1011
Abstract: 0910037 L5106 4mm banana plug socket B8170 IC 555 conductivity meter velcro straps J5260F Earth connection strip M5 screws working of light sensitive alarm with timer 555
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element-14 508MM 030-0005F 178MM O-220 cwi 1011 0910037 L5106 4mm banana plug socket B8170 IC 555 conductivity meter velcro straps J5260F Earth connection strip M5 screws working of light sensitive alarm with timer 555 | |
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Industrial Drives
Abstract: 30-P2126PA075SC-L288F09Y-D1-14 vinco igbt
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30-P2126PA075SC-L288F09Y Industrial Drives 30-P2126PA075SC-L288F09Y-D1-14 vinco igbt | |
Microstepping Control
Abstract: incremental encoder 5V RS232 Driver 24v linear stepper motor "Stepper Motors" TMC457 microstepping TMC239 step driver
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TMCM-142 TMC457 RS422 TMC239 TMCM-142-IF TMCM-142 Microstepping Control incremental encoder 5V RS232 Driver 24v linear stepper motor "Stepper Motors" microstepping TMC239 step driver | |
2SA1674
Abstract: 2SC4391
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2SC4391 2SA1674 2SA1674 2SC4391 | |
Contextual Info: OSRAM OSTAR - Stage Datasheet Version 1.2 LE RTDUW S2W Compact lightsource in SMT technology, glass window on top, RoHS compliant Kompakte Lichtquelle in SMT Technologie, Abdeckung mit Glasfenster, RoHS konform Features Besondere Merkmale • Package: compact lightsource in SMT |
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JESD22-A114-F | |
Contextual Info: OSRAM OSTAR Stage Datasheet Version 1.3 LE RTDUW S2W Compact lightsource in SMT technology, glass window on top, RoHS compliant Kompakte Lichtquelle in SMT Technologie, Abdeckung mit Glasfenster, RoHS konform Features Besondere Merkmale • Package: compact lightsource in SMT |
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JESD22-A114-F 52uct, | |
Q65111A0884
Abstract: KBLB-34
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JESD22-A114-D D-93055 Q65111A0884 KBLB-34 | |
Contextual Info: 30-F206NBA200SA-M295L33 preliminary datasheet flowBOOST2 600V/200A Features flowBOOST2 ● High power flow2 housing ● Thyristors for inrush current limitation ● Low inductive layout Target Applications Schematic ● UPS Types ● 30-F206NBA200SA-M295L33 |
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30-F206NBA200SA-M295L33 00V/200A | |
SEC IRF740
Abstract: power MOSFET IRF740 driver circuit
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OCR Scan |
IRF740 SEC IRF740 power MOSFET IRF740 driver circuit | |
Contextual Info: IRF740A Advanced Power MOSFET FEATURES B ^ dss - 400 V ^ D S o n = 0 -5 5 Q ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance lD = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V |
OCR Scan |
IRF740A | |
c125 diodeContextual Info: IRFW740S A d van ced Power MOSFET FEATURES BV DSS = 400 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ^ D S o n - 0 -5 5 Q ♦ Lower Input Capacitance In = 10 A ♦ Improved Gate Charge ♦ Extended Safe Operating Area D 2-P A K ♦ Lower Leakage Current: 10|iA (Max.) @ V DS = 400V |
OCR Scan |
IRFW740S c125 diode |