IC 41 BF Search Results

Contextual Info: L ITE M ^I semiconductors 1N5817 thru 1N5819 DO-41 FEATURES • M e ta l-S e m ic o n d u c to r ju n c tio n w it h g u a rd ring • E p ita x ia l c o n s tru c tio n • L o w f o r w a r d v o ltag e d ro p • H igh c u r r e n t c a p a b ility •

z0 150 81

Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Contextual Info: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

BF431L

Abstract: MRF9011 MRF9011L IC 21069 tuner LG BF431 C 318B 725M SF-11N
Contextual Info: 12E D I b3fc.725M MOTORCLA MOTOROLA SC DGÖÖCm XSTRS/R Ü | T^ Ì/"/7 F S E M IC O N D U C T O R TECHNICAL DATA M RF9011 BF431* M RF9011L B F431L* The RF Line N P N S ilic o n H igh -F re q u e n c y T r a n s isto rs ‘ European Part N u m b e rs . . . d esign ed prim arily for use in high-gain, low -noise sm all-sign al am plifiers for

Decoupling capacitor philips

Abstract: 4066 spice model BFG480W 4405 smd ATC100A BFG80W PMBT3904 BFG-80 bfg8
Contextual Info: Philips Semiconductors 1880 MHz PA Driver with BFG480W 1880 MHz PA Driver with BFG480W Application Note JL-9902v0 Author Jarek Lucek June 1, 1999 Discrete Semiconductors - Mansfield 171 Forbes Blvd. Mansfield, MA 02048 Abstract th BFG480W, the new 5 generation transistor from Philips Semiconductors, is well suited for PA driver applications

transistor K 1413

Abstract: D 1413 transistor MARKING NJ CODE SOT 23 k 1413 FET sf-471 TRANSISTOR D 471 BF471S BF469S BF470S S110
Contextual Info: .I TELEFUNKEN ELECTRONIC 17E D • ÛTSOCHb o o o i m i BF 469Ö BF 471 S ‘¡nUilPMKIKi electronic Creaiiv* techootojK» T * 3 2 -O S “ Silicon NPN Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 469 S complementary to BF470S

Transistor BFR 97

Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
Contextual Info: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

TRANSISTOR BFW 11

Abstract: din 867 BFw 92 BFW 100 transistor Q62702-F321 bfw92
Contextual Info: IM P IM -Siliziu m -P lan ar-H F -T ran sisto r B F W 92 BFW 92 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Kunststoffgehäuse 50 B 3 DIN 41 867 T-Bauform ähnlich T 0 -50 , für Verwendung als HF-Verstärker bis in den GHz-Bereich, z.B. für Breitbandantennenverstärker.

brf90

Abstract: BFR90 BFR90 application BFR90 transistor transistor bfr96 2N4427 2N5109 2N5179 2N6255 MRF4427
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA

BFR90

Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS BFR90 BRF90G *G Denotes RoHS Compliant, Pb Free Terminal Finish Features • High Current-Gain – Bandwidth Product, fT = 5.0 GHz (typ) @ IC = 14 mA

tc5118180bj

Abstract: tc5118180 equivalent of BFT 51 8180b TC5118180B
Contextual Info: TOSHIBA TC5118180BJ/BFT-60/70 PRELIMINARY 1,048,576 WORD X 16 BIT FAST PAGE DYNAMIC RAM Description The T C 51 18180BJ/BFT is the fast page dynamic RAM organized as 1,048,576 w ords by 18 bits. The TC 5118180BJ/BFT utilizes Toshiba’s CM OS silicon gate process technology as well as advanced circuit techniques to provide wide operating

TRANSISTOR A3

Abstract: Q62702-F350 Stempelung BFS20NA
Contextual Info: N P N -S iliz iu m -P la n a r-H F -T ra n s is to r BFS 20 BFS 20 ist ein e p itaktisch e r N P N -S iliz iu m -P la n a r-H F -T ra n s is to r 23 A 3 D IN 41 8 6 9 S O T -2 3 , fü r den Einsatz in S ch ich tsch a ltu n g e n . Kennzeichnung des Transistors: d u rch S te m p elu n g N A

transistor 2N3906 smd 2A SOT23

Abstract: 2n3904 TRANSISTOR REPLACEMENT GUIDE BC327-40 SMD bc107 TRANSISTOR SMD CODE PACKAGE SOT23 TRANSISTOR BC337-25 PNP BC548 TRANSISTOR REPLACEMENT BC327-25 SMD TRANSISTOR BC337 SMD 2n3906 REPLACEMENT MMBT3094
Contextual Info: Small Signal Transistors Industry Standard BF722 BF723 BFN38 CZTA42 CZTA92 KSA539 KSA643 KSA733 KSC1623 KSC815 MMBT3094 MMBT3906 MMBT4401 MMBT4403 MMBTA42 ST Nearest ST Replacement Industry Standard BF720 BF721 BF720 STZTA42 STZTA92 MMBTA92 MPSA42 MPSA92 MSB709

MD918

Abstract: MD918A K 1170 MD918F MD918B MD918BF
Contextual Info: MD918, A, B silicon MD918F, AF, BF NPN SILICON MULTIPLE SILICON ANNULAR TRANSISTORS MULTIPLE TRANSISTORS . . . designed fo r use as d ifferential amplifiers, dual high frequency amplifiers, fro n t end detectors and temperature compensation applications.

SFG455D

Abstract: cfw455i murata murata CFW455e CFW455H MURATA sfe 5.5 MHZ SFH455B SFG455E cfw455g SFG455G sfe 4.5 murata
Contextual Info: PIEZO ELECTRIC C E R A M IC FILTERS E M IT T E R B Y P A S S F IL T E R 1 81 0 l3 1 0 1 276 t 01 2 7 0 t 0 3] Model Center Frequency KHz BFU455K 455±2 t 354 t 012 i9 0 -r 0 31 059(1 5) max 3dB Bandwidth (KHz) 8 @ t ~ T | o o ♦ o w [ t i * o ij * . n -

Contextual Info: S C IE N T IF IC / M IN I-C IR C U IT S 4TE D flO bflflll s u rfa c e m o u n t, p iu g -m 00013TS Frequency Mixers Sfl4 B S C C Models T - 74-09-01 ASK-2 KK-81 (W-38) (X-65) L E V E L 7 (+ 7 dBm LO, up to +1 dBm RF) c o m p u te r-a u to m a te d p e rfo rm a n c e d a ta

C495 transistor

Abstract: BF194 2N4996 BF194 equivalent BF195 bf357 BF597 BF195 equivalent BF594 transistor c495
Contextual Info: Silect High Frequency Transistors Maximum Ratings Device Type Case outline B V PTOT in brackets CBO ic S j o < hFE Ic BF594 (9) V V mA mW 30 20 30 250 V 1 10 BF595 (9) 30 20 30 250 35 BF597 (9) 40 25 30 360 38 2N4996 (2) T1S02A (2) 30 30 18 50 12 30 250

Transistor BFT 98

Abstract: BFT98 BFT98B rf amplifier siemens 10 ghz
Contextual Info: SIEM ENS BFT 98 BFT98B NPN Silicon RF Transistors • For low-distortion broadband amplifier output stages up to 1 GHz at collector currents up to 150 mA. • With integrated emitter stabilizing resistors. Type Marking Ordering Code BFT 98 BFT 98 Q62702-F523

zo 103 ma

Abstract: BFT66 BFt 65 BFT 24 045912E Q62702-F456 RI-60 Q62702-F457 BFt 66 BFT67
Contextual Info: BFT 66 BFT 67 Extrem rauscharm e N P N -S iliziu m -B re itb a n d tra n s is to re n BFT 66 und BFT 67 sind epitaktische NPN-Silizium-Planar-UHF-Transistoren im Gehäuse 18 A4 DIN 41 876 T O -7 2 für Vorstufenanwendungen in extrem rauscharmen Breitband­

Contextual Info: bflE D • M Û 2S 77 1 D D m D U T 340 « I D T IN T E G R A T E D DEVIC E IDT7134SA IDT7134LA CMOS DUAL-PORT RAM 32K 4K x 8-BIT FEATURES: to tho se system s which cannot tolerate w ait states or are • H igh-speed access design ed to be able to externally arb itrate or withstand

BF961

Abstract: BF961S bf-961 agos
Contextual Info: Temic BF961 S e m i c o n d u c t o r s N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode Electrostatic sensitive device. Observe precautions for handling. ^ ^ Applications Input- and mixerstages especially for FM- and VHF TV-tuners up to 300 MHz.

BU808DFH

Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
Contextual Info: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416

MRF927T1 equivalent

Abstract: Motorola 581 741 datasheet motorola MRF927 MRF927T1 MRF927T3 S212 3019 npn transistor
Contextual Info: MOTOROLA Order this document by MRF927T1/D SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF927T1 NPN Silicon Low Voltage, MRF927T3 Low Current, Low Noise, High-Frequency Transistors IC = 10 mA LOW NOISE HIGH FREQUENCY TRANSISTOR Designed for use in low voltage, low current applications at frequencies to

BE423

Contextual Info: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­

Contextual Info: POWER l it e :*: i SEMICONDUCTORS KBP2005G thru 21OG VOLTAGE RANGE 50 to 1000 Volts CURRENT 2 AMPS. GLASS PASSIVATED SILICON BRIDGE RECTIFIERS & 2.0 A m p e re s FEATURES R atin g to 1 0 0 0 V PR V Surge overlo ad ra tin g to 65 A m peres peak Ideal fo r p rin te d c irc u it board