IC 400 Search Results

switch ic

Abstract: MM3488 "Temperature Switch" mitsumi Power Switch
Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3488 Temperature Switch IC with Hysteresis Monolithic IC MM3488 Outline This IC is a temperature switch IC that changes the IC output level from Low to High when the temperature around the IC reaches the detection temperature. With the hysteresis function, IC output level returns to

Contextual Info: MITSUMI Temperature Switch IC with Hysteresis MM3488 Temperature Switch IC with Hysteresis Monolithic IC MM3488 Outline This IC is a temperature switch IC that changes the IC output level from Low to High when the temperature around the IC reaches the detection temperature. With the hysteresis function, IC output level returns to

2SC4296

Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max

2SC4296

Contextual Info: 2SC4296 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=6A 10 to 30 23.0±0.3 100max IC=25mA IB 4 A VCE(sat) IC=6A, IB=1.2A 0.5max PC 75(Tc=25°C) W VBE(sat) IC=6A, IB=1.2A 1.3max

Contextual Info: MITSUMI Temperature Switch IC With Enable MM3588 Temperature Switch IC With Enable Monolithic IC MM3588 Outline This IC is a a temperature switch IC that senses the IC ambient temperature and switches the IC output from the Low to the High level when there is a detected temperature.

2SC4130

Abstract: FM20 transistor+2sC4130
Contextual Info: 2SC4130 Silicon NPN Epitaxial Planar Transistor High Voltage and High Speed Switchihg Transistor µA 400min V hFE VCE=4V, IC=3A 10 to 30 16.9±0.3 100max IC=25mA IB 2 A VCE(sat) IC=3A, IB=0.6A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=3A, IB=0.6A 1.3max V Tj

SSD103

Contextual Info: Surface-mount Power Transistor SSD103 Test Conditions ICBO IEBO VCEO hFE VCE sat VFEC Es/b VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH min 60 400 65 800 0.11 1.25 max 10 10 70 1500 0.15 1.5 80

elmos

Abstract: ELMOS IC motor driver ELMOS motor driver elmos 28
Contextual Info: BUS IC DC/DC CONVERTER MOTOR DRIVER IC RIPPLE COUNTER DRIVER IC I/O IC SENSOR IC SENSOR INTERFACE IC Position control ÿ Position control + driver Speed control Ripple detection ÿ Sensorless position control of DC-motors, with drivers coming soon FEATURES

TPT5609

Abstract: SS8550 sot-23 Y2 sot-23 npn marking code cr SS8050 sot-89 Y1 6B sot 363 2N3904 SOT-23 MARKING CODE S9018 j6 sot-23 Marking 2TY SOT 363 marking CODE 2H MJE13003 2A
Contextual Info: MCC TM Micro Commercial Components SMALL SIGNAL &POWER TRANSISTORS VCEO Part No hFE @ VCE & IC IC Polarity VCE sat & VBE(sat) @ IC & IB fT @ VCE & IC VCE IC VCE(sat) VBE(sat) IC IB fT Min. fT Max. VCE IC hFE hFE Max. (V) (mA) Max.(V) Max.(V) (mA) (mA) (MHz)

2SC4662

Abstract: FM20
Contextual Info: 2SC4662 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor µA IEBO VEB=10V 100max µA V(BR)CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A

Contextual Info: FMMT455 tf ts ns µS tr 0.4 tf Switching time - Volts 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0.01 1 I+ - Collector Current (Amps) 0.1 1 I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10

npn high voltage transistor 500v 8a

Abstract: 2SC4139 si50
Contextual Info: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj

2SC4139

Abstract: npn triple diffused transistor 500v 8a
Contextual Info: 2SC4139 Application : Switching Regulator and General Purpose µA V IEBO VEB=10V 100max µA V 10 V V BR CEO IC=25mA 400min 15(Pulse30) A hFE VCE=4V, IC=8A 10 to 30 IB 5 A VCE(sat) IC=8A, IB=1.6A 0.5max PC 120(Tc=25°C) W VBE(sat) IC=8A, IB=1.6A 1.3max V Tj

FMMT455

Abstract: B455 DSA003695
Contextual Info: FMMT455 tf ts ns µS tr 0.4 tf Switching time - Volts 0.3 IC/IB=10 0.2 0.1 400 6 IB1=IB2=IC/10 VCE=10V 700 600 td 500 0.1 400 50 1 300 0.01 1 I+ - Collector Current (Amps) 0.1 1 I+ - Collector Current (Amps) VCE(sat) v IC Typical Switching Speeds 1.0 IC/IB=10

ICL7104 cm

Abstract: E7104 TSM 1250
Contextual Info: IC L 8 0 6 8 /IC L 7 1 0 4 and IC L 8 0 5 2 /IC L 7 1 04 ICL8052/ICL7104 and IC L8068/IC L7104 H A R R IS S E M I C O N D U C T O R 1 4 /1 6 -B it jaP-Compatible 2-C h ip A /D Converter GENERAL DESCRIPTION FEATURES The IC L7104, com bined w ith the IC L8052 o r IC L8068,

2SC4418

Abstract: transistor 2sc4418 2sc4418 transistor FM20
Contextual Info: 2SC4418 Application : Switching Regulator and General Purpose µA IEBO VEB=10V 100max µA V BR CEO IC=25mA 400min V hFE VCE=4V, IC=1.5A 10 to 30 IB 2 A VCE(sat) IC=1.5A, IB=0.3A 0.5max PC 30(Tc=25°C) W VBE(sat) IC=1.5A, IB=0.3A 1.3max V Tj 150 °C fT VCE=12V, IE=–0.3A

Contextual Info: MITSUMI Li-ion Battery Charge Control IC MM3658AR Li-ion Battery Charge Control IC Monolithic IC MM3658AR Outline This IC is a linear charge control IC for 1-cell lithium iron phosphate LiFePO4 battery. The chip temperature detection function can limit the temperature rise in the IC during high power charging

MMS8050-L

Abstract: 2SB1073R Bd882 2SD667C 2SD667AC 2SD669AC sot23-3 marking 63 zt5551 2SD468C marking 2sd1664
Contextual Info: TM Micro Commercial Components SMALL SIGNAL&POWER TRANSISTORS MCC Part Number VCEO V IC (A) hFE @ VCE & IC VCE(sat) & VBE(sat) @ IC & IB hFE hFE VCE IC Min. Max. (V) (mA) VCE(sat) VBE(sat) Max.(V) Max.(V) fT @ VCE & IC Polarity IC IB fT Min. TPY. fT Max.

zero crossing detector ic with 90v

Abstract: ICL7104
Contextual Info: IC L 8 0 5 2 /IC L 7 1 04 and IC L 8 0 6 8 /IC L 7 1 0 4 IC L8052/IC L7104 and IC L8068/IC L7104 S E M I C O N D U C T O R 1 4 /1 6 -B it juP-Compatible 2-C h ip A /D Converter GENERAL DESCRIPTION FEATURES The ICL7104, combined with the ICL8052 or ICL8068,

MM1923D

Abstract: mm192 8 pin ic 3773 MM1925A MM192x MM1923B MM1923C MM1921c mm1923 MM1924A
Contextual Info: MITSUMI Regulator IC with the Soft-Start MM192x Series Regulator IC with the Soft-Start Monolithic IC MM192x Series Outline This IC is 1A regulator IC with soft-start. When Cs pin is connected with a capacitor, the output voltage is started up slowly. This IC can reduce a rush current by the soft-start.

MM1923D

Abstract: mm1925a MM1924K
Contextual Info: MITSUMI Regulator IC with the Soft-Start MM192x Series Regulator IC with the Soft-Start Monolithic IC MM192x Series Outline This IC is 1A regulator IC with soft-start. When Cs pin is connected with a capacitor, the output voltage is started up slowly. This IC can reduce a rush current by the soft-start.

LC823410

Abstract: RTC p1F P2D jtag ASP0A lc8234 CV-BS Series Sanyo cv-bs r20 p1f ASP01
Contextual Info: Ordering number : ENA1696 CMOS IC LC823410-10R Ultra-Low Power Consumption 7.0mW Large-Scale System LSI, GokLow, for IC Recorders Overview The LC823410-10R is a system IC that uses ultra-low power consumption technology to realize long-time playback and recording, and has various IC recorder functions. The IC is optimal for use in IC recorder applications.

VCO transistor

Contextual Info: Ordering number : EN7928A Bi-CMOS IC LV2134V MIX Built-in 400MHz Dual PLL Synthesizer IC for Cordless Phones Overview The LV2134V is a MIX built-in (400MHz) dual PLL synthesizer IC for cordless phones. Features • Down conversion mixer (400MHz) • TX, RX PLL synthesizer (400MHz)

mm3464

Abstract: MM3464A18 MM3464A30 MM34 MM3464A11 MM3464A33 IC 2576 5.0v SC-82 mitsumi SC82
Contextual Info: MITSUMI 300mA Regulator IC MM3464 Series 300mA Regulator IC Monolithic IC MM3464 series Outline This IC is a high speed response 300mA regulator IC with low quiescent current and high ripple rejection. No load input current is 20µA typ. And ripple rejection is 75dB typ.