IC 353 HZ Search Results

Contextual Info: SKM300GA12V Absolute Maximum Ratings Symbol Conditions Values Unit IGBT VCES IC Tj = 25 °C Tj = 175 °C 1200 V Tc = 25 °C 420 A Tc = 80 °C 319 A 300 A ICnom ICRM SEMITRANS 4 ICRM = 3xICnom 900 A -20 . 20 V 10 µs -40 . 175 °C Tc = 25 °C 353 A Tc = 80 °C

2n3773 power Amplifier

Abstract: 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le a 1 .S A max. <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* PT - 8.7S W m u . TO-391* lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max. < T 0 6 6 *

40410

Abstract: hFE-80-200 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 pnp darlington to-220 10a
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* A it . . A A i 9U X 9U le a 1 .S A m ax. lc » 3 .S A m ax. P y « 10 W m ax. TO-391* P T - 8 .7 S W m u . (TO-391* 90 x 9 0

2n6a

Abstract: 2N6180 2N6292 2N6181 2N5298 2N6107 2N6177 2N6178 2N6478 2N6488
Contextual Info: PLASTIC-PACKAGED POWER TYPES le > 2 A max. P y * 25 W max. P lv tic T0-5 42x42* IC * 4 A max. P j - 25 W max. (Plastic TO-5) 42x42 le > 1 A max. Pt • 20 w max. (Plastic TO-5) 3 2 x3 2 lc - 7 A max. P y - 4 0 W max. V ERSA W A TT (TO-220) l c • - 7 A max.

Transistor 2n6099

Abstract: BD278 2N3055 2N6478 power amplifier circuit 300W TRANSISTOR AUDIO AMPLIFIER 40636 class ab audio amplifier circuit transistor 2N1482 2N5415 2N344
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . V cE to 170 V H O M ETA XIA L-B A SE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* A it . AAi 9U X 9U le a 1 .S A max. lc » 3.S A max. Py « 10 W max. TO-391* PT - 8.7S W m u . (TO-391* 90 x 90 90 x lc * 4 A max.

51C MARKING code

Abstract: marking 51c TK11050 TK11051 TK11051MTL
Contextual Info: TK11051 TEMPERATURE CONTROLLER IC FEATURES APPLICATIONS • Internal Temperature Sensor, Voltage Reference and Comparator ■ Temperature Threshold and Hysteresis Set by Only Two External Resistors ■ Output Logic: High to Low with Increasing Temp. ■ Active High On/Off Control

2N6476 JAN

Abstract: 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372
Contextual Info: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT

2N6175

Abstract: 2N5296 RCA 2N5415 2N6180 2N6491 SWITCH 2N3439 2N3440 2N5840 2N6079 2N6177
Contextual Info: H IG H -V O L T A G E N -P-N & P-N-P P O W E R T Y P E S 1C t o 3 0 A . . . f r t o 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í lt > 1 A max. Pt - 10 W max. jTO-39»* lc > -1 A max. Py - 10 W max. (TO-39 * 32 x 32a 42x42

T-60328

Abstract: T-60311 T-60318 M 60351
Contextual Info: Low Profile PC Power Transformers Low Profile PC Power transformers are used in seni-conductor control and instrumentation. They are used extensively in single or dual output DC supplies, isolated control circuit & reference supplies. Schematic P a r a lle l External

2n3055

Abstract: 2N1482 2N3054 2N344 2N5298 2N5786 2N6478 ITO-220 20100 ct
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A m ax. P T " 8 .7 6 W m ax. ITO -39J* le a 1 .S A m ax. P T - 8 .7 S W m u . TO-391* A it . . A A i 9U X 9U lc » 3 .S A m ax. P y « 10 W m ax. (TO-391* lc * 4 A m ax.

ic str 6707

Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor

7028 TRANSISTOR

Contextual Info: IBM43RF0100 Preliminary SiGe High Dynamic Range Low Noise Transistor Features • Low N oise Figure: NFmin ~ 1.1 dB @ 2.0G H z Low O perating Voltage • Input IIP3 C apability: ~ + 10dBm @ 2.0G Hz, Package: SO T353 V qq = 3V, lc =5m A Description The IB M 43R F 0100 is a S ilicon-G erm anium SiGe

BC237B

Abstract: BC237 BC307 TRANSISTOR bc237b BC307B transistor bc237 bc307 pnp BC237 Philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 BC237; BC237B NPN general purpose transistors Product specification Supersedes data of 1997 Mar 06 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN general purpose transistors

JC501

Abstract: JC501Q JC501Q transistor BP317 JA101 JC501P JC501R JA1012
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC501 NPN general purpose transistor Product specification Supersedes data of 1997 Mar 17 1999 Apr 27 Philips Semiconductors Product specification NPN general purpose transistor JC501 FEATURES PINNING

BDY29

Abstract: 40349 2N3055 BD278 2n3773 power Amplifier 2n377 2n3771 BDY71 2N1482 2N344
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

2N3065

Abstract: BD278 2N5295 2N3055 ct-88 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

JC549

Abstract: JC549B JC549C JC550 JC550B JC550C JC559 JC560
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC549; JC550 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jul 08 Philips Semiconductors Product specification

transistor equivalent 2n5551

Abstract: diodes inc 2N5551 2N5551 2N5551 diodes inc transistor 2n5550 2N5551 circuit PO 903 str 6707 datasheet 2N5400 2N5401
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5550; 2N5551 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 09 Philips Semiconductors Product specification NPN high-voltage transistors

BC848T

Abstract: BC848CT mcc 95 08101b str 450 a Q 817 BC858T marking code 501 PO 903 BC847BT SC-75
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D173 BC846T; BC847T; BC848T series NPN general purpose transistors Preliminary specification File under Discrete Semiconductors, SC04 1997 Jul 07 Philips Semiconductors Preliminary specification NPN general purpose transistors

Contextual Info: BCW69 BCW70 SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors Marking BCW69 = ¿[1 BCW70 = H2 PACBCAGE OUTLINE DETAILS ALL DIMENSIONS IN mm 3.0 2.8 0.14 0.48 0.38 L 0.70 0.50 3 "1 Pin configuration 1.4 2.6 2.4 1.2 R0.1 1 = BASE 2 = EMITTER 3 = COLLECTOR

BCY88

Abstract: bcy87 BCY89 SOT31 BP317 MAM351 BCY87 equivalent
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D126 BCY87; BCY88; BCY89 NPN general purpose transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN general purpose transistors

BU505 equivalent

Abstract: Q 817 BU505D BU505
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BU505; BU505D Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUJ103A Silicon Diffused Power Transistor Product specification August 1998 Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ103A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use

but11

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BUT11; BUT11A Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors