IC 2108A Search Results

logos 4012B

Abstract: 1LB553 Rauland ETS-003 Silec Semiconductors MCP 7833 4057A transistor sr52 74c912 1TK552 74S485
Contextual Info: L p i > « , * S E m Ic O N VOLUM E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 5th EDITION 1985 Revised June 1985 COMPILED AND PUBLISHED BY S E M IC O N IN D E X E S L IM IT E D THE SEMICON INDEX SERIES CONSISTS OF VOLUME 1 TRANSISTOR INDEX VOLUME 2 DIODE & SCR INDEX

H-17

Abstract: H-18 H-19
Contextual Info: = m o s ^ - o ía ^ f í. ü L Ä i^ m ü E 8 2 9 8 8 M ) B1 82 til. m. V cES Si V CES Ic -il ft * I CP I Pc F (lms) (lm s ) T, T .t, V iao c m W ) I 1 GES ( n A) V CES V GE (mA) (V) ft "vö T T c= 2 5 5Co &2. Ic V CE (V ) 6 20 6 20 600 3 6 20 50 2.5 15

TR 2108A

Abstract: 2108A PM108A 2108a supply pm308ap PM2108
Contextual Info: PM-108A/PM-2108A LOW-INPUT-CURRENT OPERATIONAL AMPLIFIERS PM-108A / PM-308A / PM-108 / PM-208/ PM-308/ PM-2108A / PM-2108 P r e c i s i o n M o n o lith ic « » In c. FEATURES d ire ctly interchangeable w ith industry-standard types, Precision M onolithics’ advanced processing provides the

2108a

Abstract: ic 2108a pm108z PM108AZ pmi opo 7 ic+2108a TRANSISTOR+2108A
Contextual Info: PM-108A/PM-2108A FMÏ LOW-INPUT-CURRENT OPERATIONAL AMPLIFIERS PM-108A / PM-308A / PM-108/ PM-208 / PM-308/PM-2108A / PM-2108 t M ATURES d ire c tly in te rc h a n g e a b le w ith in d u s try -s ta n d a rd type s, P re cisio n M o n o lith ic s advanced pro ce ssin g provides the

MG75Q2YS1

Abstract: 2108a
Contextual Info: MG75Q2YS1 SIL IC O N N C H A N N E L IG B T Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 4 - F A S T - O N - T A B # ! 10 • High Input Impedance • High Speed: t f = 0 . 5us Max. t r r =0* s ( M a x . ) • Low S a tu ra tio n V oltage: Vcg(sat)=4.0V(M ax.)

EVK75-050

Abstract: EVG31-050 EVK31-050 TAE 1102 2DI300A-050 H-17 H-18 H17133
Contextual Info: 246 — I — N P N , iq g m v s m o Z Ë Î. S V ebo c > « > VcBO m ^ I CP (A (A ) AC, 15m > B I f (A ) (A ) T , tf Pc (a i) (W ) Total (W ) V i., (i£ 2 ) CC) CC) (V ) CBO (m A ) ft * Œ 3. # fcUtèVcio m ft EBO V cB (V ) (m A ) Ä (ic Ä m A ) ft

QM10TE-HB

Abstract: QM15TD-9B 4a2d QM20BA-H s62a1 QM10KD-HB QM15 QM10TD-H QM15TB-2H QM15TB-2HB
Contextual Info: - 262- b i-s y * ? ms/Bmy' yvi cnpn, ¥ — ') > Y 'y • h 7 > i/z . ? 4 fi§/ 6 W i 7 7 ? 'f * - U L I 8 ^ B DD * i } P i ^ / 3 f t :/ '; Yellow K tt Card File No. No. 0^7? BvP EvP E 8 0 2 7 6 (N) E80271 BvN EvN BuN o - r l EuN'i*> a i. ic = i a , V C BO

QM15

Abstract: Type QM15TB H-17 H-18 QM15TB-2H QM15TB-2HB QM15TG-9 QM15TG-9B QM20 QM10
Contextual Info: - 262- b i-s y * ? ms/Bmy' yvi cnpn, ¥ — ') > Y 'y • h 7 > i/z . ? 4 fi§/ 6 W i 7 7 ? 'f * - U L I 8 ^ B DD * i } P i ^ / 3 f t :/ '; Yellow K tt Card File No. No. 0^7? BvP EvP E 8 0 2 7 6 (N) E80271 BvN EvN BuN o - r l EuN'i*> a i. ic = i a , V C BO

nv470d10

Abstract: NV200D10 NV430D10 NV390D10 NV360D10 NV620D10 TA8250 NV780D10 NV270D10 NV082D10
Contextual Info: - 331 h M w v m \0 i i7.5±1 ¡± 1 D C lm A ^ « iI^ ifL L / ^ ¿ # í0 ^ í« l± '< 'J x . í ’f c J E í & l ) ic £ [V] CV) ft ñ í § [H ÍS ^ f± DC AC 50 60Hz • [V] (V) x % ¡i-% V. IMk* (J) Cw) it (v) Ip [A] Jrf — : y ít K ( 8 X 20; í s )

2mb175

Abstract: 2mb175l-120 2MB175L-060 2mb1200 2MB125L-120 2mb1150l120 2mb1200f-060 2mb1300 2MB125F-120 2MB1150L-120
Contextual Info: = m o ía ^ fí. ü o s ^ - m L Ä i ^ ü E 8 2 9 8 8 M ) B1 82 til. m. V cES Si V CES Ic ft * I CP Pc I F T, T .t, V iao -il (lm s ) (V ) (V ) (A ) (A ) (lm s ) (A ) (A ) CW ) (°C ) (°C ) 1 GES V GE (m A ) (V ) fi (V ) ft ^ X "vö T (V ) &2. (V ) ft

4A2C

Abstract: Y711 QM15 H-17 H-18 QM100CY-H QM150CY-H QM30CY-H QM50CY-H QM75CY-H
Contextual Info: - 260 — b y 's ^ x ï • ÍNPN, y y i l T - l . t y ? ? - , - ? ) ° y-<)>yy ° 7 i j- t .- fji,. y 4 * - K # » 8 CY-1A ai. I c = l A . Veb=2V, » ËPliVcEl ft m * 1« » (n's?9~j7mai % V C 80 VCEX (SUS) * V EBO Ê Ic (Ve.= 2 V K fê I B I F ta n

QM100TF-HB

Abstract: QM20TD-H QM20TD-HB QM20KD-HB TX-IA QM30 QM30TB-24 QM30TB-2H QM30TB-2HB QM30TX-H
Contextual Info: 264 - - h ^ i f a - ;U [N P N , a 'i -y v ] I c— 1 A, V eb — 2 V , ft VcBO £ V C EX SUS # ÉPÜVCEX m * V EBO Ic I FM I s (A ) (A ) V i. m ) (A ) (W ) CC) (A ) T .i, Ti (£ 3 ) rc> (V ) % V CE V EB (m A ) ft (V ) (V ) ft * V EB X (V ) (V ) ft /J'

QM100DY-2H

Abstract: QM150DY-HB QM150DY-2HB QM100DY-H QM200DY-H QM150DY-2H QM100DY-2HB QM100DY-HB QM15 qm200dyh
Contextual Info: - 258LN P N , DY 3B b. X » “ H y ? V I/ 7 - A - it ft U g ^ ] O &• - o i l r C .E i o- IP r ií: B iX o - # ) . ir - 1 A. V .= 2 V . S V CBO m % V EBO V c E X (SUS) # f f lliV r » . £ X Ic ( V » * = 2 V ”) . tè 18 I f (a n (V )

SM25UZ41

Abstract: sm25JZ41 SM25GZ41 SM25GZ42 SM25JZ42
Contextual Info: - S M 2 5 rD, G, J j Z 4 1 C % t h t > V . :<fc O 25A « s in t t t t ^ U L Ic'ÂEpn I drm V tm !£ (2000V, A C $¿ ^ SM25DZ41 SM25GZ41 SM25JZ41 V drm 200 400 600 J t i RMS) 25 ( Te = 73’C ) 230 (50Hz. I 2-t 260 (<= 2 ~10ms) A 2S I gt 5 V CM 10 V Vgd

CR400EY-10

Abstract: CR400EY-16 CR400EY-4 CR400EY-6 CR400EY-8 FT100DX-16 FT100DX-20 FT100DX-4 FT100DX-6 FT100DX-8
Contextual Info: #1 LO1/9 LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO LO IO LO LO LO LO LO LO sac«ae s a e s aes aesaesac s j c s joa csje s ae s a s aes ac s jc s jc s j e s jes aes aes ac « a csjesae S J IC S Je s aC S JC S

Contextual Info: MG100Q2YS40 TOSHIBA MG100Q2YS40 T O S H IB A GTR M O D U L E SILICO N N C H A N N E L IGBT Unit in mm H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S . M O T O R C O N T R O L A PP LIC A TIO N S . 4 - F A S T -O N -T A B #1 10 • • High Input Impedance

2108A

Abstract: PM108A PM308AJ 2108A PMI PM108Z pm308ap PM108 PM2108 PM108AJ PM-2108
Contextual Info: PM-108A/PM-2108A PMÏ LOW-INPUT-CURRENT OPERATIONAL AMPLIFIERS PM-108A / PM-308A / PM-108 / PM-208/ PM-308/ PM-2108A / PM-2108 Monolith its ! FEATU RES The PM-2108A contains two superbeta PM-108A op amps in a single 16-pin DIP. Compared to the single PM-108A types, this

TRANSISTOR 2108A

Abstract: 2108A
Contextual Info: Raytheon Electronics Semiconductor Division L M 1 08A /L H 2108A Precision O perational A m plifiers Features Low input bias current — 2 nA Low input offset current — 200 pA Low input offset voltage — 500|iV Low input offset drift — 5 |iV/°C Wide supply range — ±3V to ±20V

TRANSISTOR 2108A

Abstract: 2108a equivalent of 2108A transistor 2108a transistor TR 2108A 2SA1724 EN4698 marking 215 FP215 ic 2108a
Contextual Info: Ordering number:EN4698 FP215 PNP Epitaxial Planar Silicon Composite Transistors High-Frequency Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the PCP package currently in use, improving the mounting efficiency greatly.

GT250101

Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Contextual Info: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a

Contextual Info: T O S H IB A MG100Q1JS40 MG1 00 Q 1 J S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M 5 • • 2-¡ZÍ5.6±0.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage

TRANSISTOR 2108A

Abstract: 2108A SE 566 IC
Contextual Info: TOSHIBA M G100Q2YS40 T O SH IB A GTR M O D U L E SILICO N N C H A N N E L IGBT MG100Q2YS40 U n it in mm H IGH PO W ER S W IT C H IN G APPLICATIO N S. M O T O R C O N T R O L APPLIC ATIO N S. • H igh In p u t Im pedance • H igh Speed : 4- F A S T - O N - T A U #1 1U

74s188 programming

Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
Contextual Info: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE

MG100Q1JS40

Contextual Info: T O S H IB A MG100Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG1 0 0 Q 1 J S 4 0 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. 3-M 5 • High Input Impedance • High Speed : tf=0.5/*s Max. 2 -Ç Ô 5 . 6 ± 0 . 3 trr= 0.5/^s (Max.)