IB27 Search Results

Contextual Info: Part Number: Integra IB2731M110 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731M110 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C

Contextual Info: Part Number: Integra IB2729M5 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor part number IB2729M5 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C

Contextual Info: Part Number: Integra IB2729M25 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M25 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. It is designed to serve

marking 5

Abstract: transistor Common Base configuration diode MARKING F3 transistor DF 50 4620 NT 101 PW 1.5 IB2729M90
Contextual Info: Part Number: Integra IB2729M90 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high f T The high power pulsed radar transistor part number IB2729M90 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class C

Contextual Info: Part Number: Integra IB2729M90 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor The high power pulsed radar transistor part number IB2729M90 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in

tegra 2

Abstract: 300 watts amplifier s-band tegra radar amplifier s-band s-band 50 Watt power amplifier 300w amplifier 2 Watt S-Band Power Amplifier ibp2729m300 tegra 3 d5548
Contextual Info: Part Number: Integra IBP2729M300 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Pallet Class C Operation − High Efficiency Part number IB2729M300 is a 50 Ω matched high power pulsed radar pallet amplifier for S-Band radar systems operating over the instantaneous bandwidth of

Contextual Info: Integra Part Number: IB2729M170 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor part number IB2729M170 is designed for S-Band ATC radar systems operating over the instantaneous bandwidth of 2.7-2.9 GHz. While operating in class

Contextual Info: Part Number: Integra IB2731MH110 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT S-Band Radar Transistor Class C Operation − High Efficiency The high power pulsed radar transistor device part number IB2731MH110 is designed for S-Band radar systems operating over

Contextual Info: Part Number: Integra IB2731MH25 TECHNOLOGIES, INC. S-Band Radar Transistor Silicon Bipolar − Ultra-high fT The high power pulsed radar transistor device part number IB2731MH25 is designed for S-Band radar systems operating over the instantaneous bandwidth of 2.7-3.1 GHz. While operating in class C

MB7053

Abstract: 3S02A-2 MB7115E MB7116E 63LS240 63LS241 63PS240 63PS241 63S240 MB7116
Contextual Info: - 6 m & í± £ hafiFlCPrl OC X A •'/& V y taac TCAC max ns) (ns) liO 30 63LS240 MM I 0-75 63LS241 «MI 0 — 75 W 63PS240 MMI 0-75 30* 63PS241 MMI 0-75 30* 63S240 MMI 0— 75 TOH max (ns) TOE max (ns) m m TOD V D D or V C C (ns) (V) 3 a I DD max (mA)

Contextual Info: ISL12027, ISL12027A Data Sheet August 12, 2010 FN8232.8 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery

relay Re 04501

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 re 04501 relay wabash relay 1SK6-0001 wabash reed relay JFET TRANSISTOR REPLACEMENT GUIDE e201 npdsu406 34901a ysi 44031
Contextual Info: ••• • V . / • * •. Agilent Technologie: Innovating the HP Way ' — ENGI86 Service Guid< Agilent 34970A D ata Acquisition / Switch U nit C opyright 1999 H ew lett-Packard Company All Rights Reserved. P rinting History E dition 1, Ju n e 1997

UPC8236

Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
Contextual Info: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s

filter for GPS spice

Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
Contextual Info: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率

ISL12027IV30AZ

Abstract: ISL12027 ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z SARONIX RoHS
Contextual Info: ISL12027 Data Sheet January 19, 2010 FN8232.6 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery

A27A

Contextual Info: I CONNECTOR I ENG NO. EDP NO. 784 I-A04B 015-05-8046 .098/ 2.49 CKTS 04 05 784 I-A06B 015-05-8066 06 784 I-A07B 015-05-8076 07 .617 (15.67) .715 (18.16) 08 784 I-A09B 015-05-8096 09 784 I-AI0B 015-05-8106 10 .813 (20.65) .912 (23.16) 1.010 (25.65) 784 l-A 1IB

ISL12027IV30AZ

Abstract: ISL12027 ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z 1.5k 275v X2
Contextual Info: ISL12027 Data Sheet February 11, 2010 FN8232.7 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery

BA 7891 NG

Abstract: bts 2140 1b TFF1014 BLF4G08LS-160A bf1107 spice model BF862 spice model RF transceiver 802.11AC Multiple output LNB 802.11AC BGU6104
Contextual Info: 释放潜能 RF 手册第 16 版 高性能 RF 产品应用和设计手册 2012 年 6 月 恩智浦助您释放下一代 RF 和微波设计的潜能 恩智浦 RF 手册是当今 RF 设计市场上最重要的参考工具之一。此手册对我们的全系列 RF 产品进

IB27Z

Abstract: a1d21 ISL12027 ISL12027A ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27Z
Contextual Info: ISL12027, ISL12027A Data Sheet August 12, 2010 FN8232.8 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery

Contextual Info: NATIONAL SEMICOND -CLOGIO bSGllSB OGkibSfc. □ • 31E D National Semiconductor T - 5 2 -07-00 DM74AS1008A Quadruple 2-lnput AND Driver General Description Features This device contains four independent 2-input drivers, each of which performs the logic AND function. The ’AS1008A is

IB27AZ

Abstract: X12028 ISL12027 ISL12027IB27AZ ISL12027IB27Z ISL12027IB30AZ ISL12027IBAZ ISL12027IBZ ISL12027IV27AZ ISL12027IV27Z
Contextual Info: ISL12027 Data Sheet October 19, 2007 FN8232.5 Real Time Clock/Calendar with EEPROM Features The ISL12027 device is a low power real time clock with timing and crystal compensation, clock/calender, power-fail indicator, two periodic or polled alarms, intelligent battery

AMD AM2 pin

Abstract: M5M270100P Hitachi Scans-001
Contextual Info: - 140 — P 5 7 1 0 0 0 X ïa J a JK W æ £ it £ <°c> A -, f- > y « tt « VDD A M tu ü / m Ci max pF V O L / I VOL max (V/mA) æ € æ V O H / I VOH min (V/mA) Co max (PF) TOH max (ns) TOR max (ns) TOD max (ns) 170 170 65 50 4. 5 - 5 . 5 30/1.0 0.8

sot-89 BV SMD TRANSISTOR MARKING CODE

Abstract: bgu7051 MS1051 2SK163 BLF578 fm band BLF278 mosfet HF applications BFU610F TAN250A PTFA 210301E - 30 W 100MHz SMD RF Mixer
Contextual Info: RFマニュアル第14版 RF製品用のアプリケーションお よび設計マニュアル2010年5月 NXPセミコンダクターズRFマニュアル第14版 3 最も要求の高いアプリケーションに向けたハイパフォーマンスRF NXPのRFマニュアルでRF設計がこれ

6 pin TRANSISTOR SMD CODE CAA

Abstract: TEA6721 BF991 spice model
Contextual Info: RF マニュアル第 16 版 ハイパフォーマンスRF製品用のアプリケーション および設計マニュアル 2012年6月 NXPで次世代RFおよびマイクロ波設計のパフォ ーマンスがさらに向上 NXPの RF マニュアルは、