I349 Search Results

r9824

Abstract: R9825 HT 1200-4 smd L9707 HT 1200-4 r9810 L9708 U5400 r2561 C3523
Contextual Info: 8 6 7 2 3 4 5 CK APPD GILA 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN DATE ? ? ? EVT1 D C B PAGE PDF 1 2 3 4 6 7 8 9 10 11 13* 14 16

IRF5505

Abstract: C3427 SN7002DW LD1807 343S0284 apple AirPort Extreme h11m r3361 HC17051 1n914 onsemi
Contextual Info: 6 7 B A 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 REV 08/03/04 CIRCUIT

RTL8211E

Abstract: Marvell 88E1116R TC7SZ08AFEAPE TLA-6T213HF C5855 88E1116R 57B8 PP3V42 NTC 15D-7 u9701
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97A MLB SCHEMATIC C 681298 PRODUCTION RELEASED DATE 03/11/09 ? REFERENCED FROM T18 03/11/2009 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

sil1162

Abstract: Diode 31d8 06 31d8 diode C828 3-pin transistor 2N7002DW 3 PIN hall effect sensor u58 hall effect sensor u58 zener 12a2 powerbook bubba oscillator schematic
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM

ISL6259

Abstract: transistor C3229 ISL6258AHRTZ transistor c6074 ISL9504BCRZ of transistor c2570 transistor c3300 c3228 transistor transistor c3150 c2570 transistor
Contextual Info: 8 7 6 5 4 3 2 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ECN DESCRIPTION OF REVISION C 0000813234 CK APPD DATE PRODUCTION RELEASED 2009-11-01

APPLE A6 CHIP

Abstract: cf325 W07 sot 23 C-492-5 SMD M05 sot23 C4977 cf406 p66 apple c5297 I342
Contextual Info: 8 6 7 PDF CSA CONTENTS IMG5 17" REV E 11/01/05 SYNC MASTER DATE PDF CSA CONTENTS TABLE_TABLEOFCONTENTS_HEAD 2 System Block Diagram FINO-DD 06/20/2005 TABLE_TABLEOFCONTENTS_ITEM 3 4 Power Block Diagram FINO-PC 06/20/2005 5 Table Items FINO-M23 08/26/2005 6

db3 c918

Abstract: TRANSISTOR 6b8 SMD Q88 apple ZENER Diode 12B2 2c213 diode zener 12a2 diode DB3 C531 bubba oscillator schematic smd transistor 6a1 U52 A4 apple
Contextual Info: 8 6 7 PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. D 2 3 4 5 REV 10/15/2004 CONTENTS

Contextual Info: 13 12 10 NOTES: .420 1. MATERIALS: SHROUDED WAFER: LCP, COLOR: BLACK, 94V-0 .280 PINS: COPPER ALLOY . 00 7 . I I ( 10.6 7 ) 2. FINISHES: (2.54) TIN: .000150/(0.00381) MINIMUM TIN OVER .000050/(0.00127) MINIMUM NICKEL. 15 GOLD: .000015/(0.00038) MINIMUM GOLD PLATE IN SELECTED AREA AND

Contextual Info: 10 S IB I. LG o NOTES 553 3 v ' J - X M A T ES WITH : 5 5 3 3 S E R IE S . 'r B mm SD-5533-NC PB £#S§fflZ<L„ R E F F E R TO S D -5 5 3 3 -N C P B DRAWING FOR P. C. BO AR DS P O SIT IO N IN G D IM E N SIO N S. U M M A T E R IA L t r y : I t n to.4 z ^ j l t ±6

TH3L10Z

Abstract: TH3L10 TH3L20 T7K40 2SCI469 2SD574 2sc3427 dica20 T5L20 Tk3Lio
Contextual Info: ? • SEMICONDUCTOR ARISTO-CRAFT t,b « E IA J No. !o A VOBO VOEO •'(V ) (V) T7T5 2SB983 -6 0 -5 0 -7 T 7S 5 2 S D I3 4 5 60 50 7 T 7S 3 2SC3427 50 30 7 T I0 S 4 2SC3428 60 40 10 450 360 PT hFE (W ) (M S ) to n . 40 70 100 50 85 7<4"j:y > /7 max. t9 tf

IRLM2402

Abstract: c4977 cf325 NEC c5292 VD357 C5292 nec NEC "C4305" cf406 C4934 C5248
Contextual Info: 8 6 7 2 3 4 5 CK APPD FINO M23 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. 1 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE 19 397409 ENGINEERING RELEASED

SMC1602

Abstract: SN7002DW c3231 Q2576 r2561 C3239 C3303 C2651 C5060 U4900
Contextual Info: 8 6 7 C B A PAGE PDF 1 2 3 4 5 6 7 8 9 10 11 13* 14 16 17 18 21* 22 23 24 25* 26 27 28 29 30 31 32 33 34 35 36 37 38 40 44 45 46 48 49 50 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 2 3

i354

Abstract: 2N7222 IRFM440 IRFM440D i-354
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER I& R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM440 SN7SSS JANTX2N7222 JANTXV2N7222 N-CHANNEL [REF: MIL-S-1S500/596] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET® technology is the key to International

Contextual Info: 13 12 10 NOTES: I- MATERIALS: SHROUDED WAFER: PINS: LCP, COLOR: BLACK, 9 4 V -0 PHOS. BRONZE •100 2 - PLATING FINISHES FOR PINS: T IN : .0 0 0 1 5 0 MINIMUM TIN OVER .0 0 0 0 5 0 MINIMUM NICKEL. 15 GOLD: .0 0 0 0 1 5 MINIMUM GOLD PLATE IN SELECTED AREA AND

ISL6258

Abstract: Diode C1280 c1295 battery C2240 3A967 820-2179 U4900 u3150 OZ9956 g5551
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN SCHEM,MLB,M82 PVT 11/14/2007 ENG APPD DESCRIPTION OF CHANGE DATE DATE

RTL8211E

Abstract: RTL8211CL reference Design MCP79 HS82117 rtl8211cl RTL8211 u9701 ISL6258A C5855 TC7SZ08AFEAPE
Contextual Info: 8 6 7 REV ZONE ECN ENG APPD DESCRIPTION OF CHANGE DATE M97 MLB SCHEMATIC A 625211 PRODUCTION RELEASED DATE 08/29/08 ? REFERENCED FROM T18 08/27/2008 D .csa Date Page TABLE_TABLEOFCONTENTS_HEAD TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM TABLE_TABLEOFCONTENTS_ITEM

N 5533

Abstract: 5533N SD-5533-NCPB SD-5532-001 I349 55320 molex 5532
Contextual Info: 10 60e S IB I. NO. CIRCUIT NO. 8*0.3 NOTES 5533 V ' J - X MATES WITH :5533 SERIES. 'r B mm SD -5533-N C PB$#TO Zto REFFER TO SD-5533-NCPB DRAWING FOR P. C. BOARDS POSITIONING DIMENSIONS. UM MATERIAL : H S l t 0 . 4 L T ± ft O x j \ - : i~ -iay6 6 s U L 9 4 V - 0

I349

Abstract: i-089
Contextual Info: 13 12 10 NOTES: - MA TE RIA LS : SHROUDED WAFER: PINS: .3 15 LCR, COLOR: BLACK, 9 4 V - 0 COPPER ALLOY. .2 8 0 •I0 0 3 0 GOLD MIN IM UM GOLD P L A T E IN S E L E C T E D AREA AND 3 AND 4 FOR PAC KAG IN G D E T A IL S . 6- MU ST ■5 2 Q Í.0 15 . 174 ■1 0 0

134900-1

Contextual Info: 13 12 10 NOTES: .3 15 - MA TE RIA LS : SHROUDED WAFER: LCR, COLOR: BLACK, 9 4 V - 0 COPPER ALLOY. PINS: •I0 0 3 0 GOLD MIN IM UM GOLD P L A T E IN S E L E C T E D °0 3 5 R E F L89 REF~ AREA AND 6- . 174 ■ 7- 20 C IR CU IT 100 SEE .200 NOTE . 150 3.8 I)

Diode 31d8 06

Abstract: r2561 11A3 bubba oscillator schematic 31d8 diode 2N7002DW zener DB3 C209 bubba oscillator 88E1111 config MBR0520LT
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 C B CONTENTS

22B4 diode ZENER

Abstract: smk 1350 transistor 88E1111 BCC package SIL1162 LS650 C3333 P33A zener DIODE 5c2 39C6 2N7002DW
Contextual Info: 8 6 7 2 3 4 5 1 CK APPD DRAWING 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN DATE 02 D PAGE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18

7901

Abstract: 2N7222 IQR 2400 IRFM440 IRFM440D
Contextual Info: Data Sheet No. PD-9.492C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED TRANSISTOR N-CHANNEL IRFM440 SN7SSS JANTXSN7SSS JA NTXV2N7222 [REF: MIL-S-1S500/S9B] Product Summary 500 Volt, 0.85 Ohm HEXFET The HEXFET technology is the key to International

31d8 diode

Abstract: r2561 741G32 zener 12a2 27b4 R3381 zener 12B2 2N7002DW MAX4172 TH 2267 charger circuit diagram
Contextual Info: 8 6 7 2 3 4 5 CK APPD 1. ALL RESISTANCE VALUES ARE IN OHMS, 0.1 WATT +/- 5%. 2. ALL CAPACITANCE VALUES ARE IN MICROFARADS. 3. ALL CRYSTALS & OSCILLATOR VALUES ARE IN HERTZ. REV ZONE ECN C B TITLE PAGE AND CONTENTS SYSTEM BLOCK DIAGRAM POWER BLOCK DIAGRAM PCB NOTES AND HOLES

cf325

Abstract: Broadcom EMI NEC c5292 UE401 c5885 CF-325 CE015 CF219 I1016 C1900 PCB
Contextual Info: 8 6 7 PDF CSA CONTENTS SYNC MASTER DATE PDF CSA CONTENTS 2 System Block Diagram FINO-M23 08/26/2005 4 Power Block Diagram FINO-M23 08/26/2005 5 Table Items FINO-M23 10/07/2005 6 FUNC TEST 1 OF 2 FINO-M23 08/26/2005 7 POWER CONN / ALIAS M33-PC 06/20/2005 8