I100M Search Results

6DI100M-050

Abstract: 30S3 diode aa7 6DI100M050
Contextual Info: 6D I100M -050 iooa ‘ Outline Drawings POWER TRANSISTOR MODULE 17 6 14 14 6 17 1 —ti —¡i —ri—n r : Features • H igh DC C urrent Gain H ig h speed s w itc h in g • 7 'J —A A • KftiWWt Kl*9fi& In c lu d in g Free W h e e lin g D io d e Insu la te d Type

transistor 75 U50

Abstract: 2DI50M-050 2DI100MA-050 2DI30M-050 M203 M208 M210 6DI100M-050
Contextual Info: BIPOLAR TRANSISTOR M O DULES Ratings and Specifications 600 volts class high Fife power transistor modules • Because this m o d u le has 10 tim e s or m o re th e con vention al DC cu rren t gain, set p ro p o rtio n a lly fo r each ele m en t cu rren t capacity 75 to 300A , it is possible to m in iatu rize and standardize th e base drive circuit and drive p o w er supply.

Contextual Info: S A M SU N G SEMICONDUCTOR 1 4E INC D TTbMma OOGTBbT t> PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR MPSA63 T -2 9 -2 9 DARLINGTON TRANSISTOR • Collector-Emitter Voltage: V c e s=3 0 V • Collector Dissipation: Pc (max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

Contextual Info: /Turm TECHNOLOGY LT13Q1 M ic r o p o w e r H ig h E ffic ie n c y 5 V / 1 2 V S te p -U p D C / D C C o n v e r t e r fo r Flash M e m o r y KATU R 6S DCSCRIPTIOn • 12V at 120mA from 5V or 3.3V Supply ■ Supply Voltage as Low as 1.8V ■ Better Than CMOS

DBV74

Contextual Info: KA78LXXA FIXED VOLTAGE REGULATOR POSITIVE 3-TERMINAL Q.1A POSITIVE VOLTAGE REGULATORS TO-92 The KA78LXX series of fixed voltage monolithic integrated circuit voltage regulators are suitable for application that required supply up to 100mA. 1: Output 2: GND 3: Input

Contextual Info: 2 D 1 I O O - M 1 20 i o o a y<7_ POWER TRANSISTOR MODULE : Features • • h F E ^ fii' High Arm Short Circuit Capability High DC Current Gain • 7 ' J — f r ' i 1) • K rtj Including Freew h eelin g Diode Insulated Type •Applications • —? General Purpose Inverter

Contextual Info: D 2 I ,< rj — 1 M ^ - 1 2 i o o a 3.—JU W ïfé T l'ïi : Outline Drawings POWER TRANSISTOR MODULE • 9U S : Features • JSSSRS^iSSl.' High Arm Short Circuit Capability • hFEfr'Sv.' High DC Current Gain • 7 'J —f r 'f'J > $ ¥ 4 % —KrtSR Including Freewheeling Diode

Contextual Info: {£ HARRIS H A -2 5 4 4 /8 8 3 January 1989 Video Operational Amplifier Features D escrip tio n • This Circuit is Processed In Accordance to M il-S td 883 and Is Fully C onform ant Under the Provisions o f Paragraph 1.2.1. The HA-2544/883 is a fast, unity gain stable, monolithic op

C645 diode

Abstract: Diode C645 part marking mwrc
Contextual Info: PD - 9.1414B International IO R Rectifier IR L M S 6 7 0 2 HEXFET Power MOSFET • • • • Generation V Technology Micro6 Package Style Ultra Low Rds on P-Channel MOSFET V dss = ’2 0 V R D S (on) = 0 - 2 0 Q Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize

Contextual Info: Sony Package Product Name . . Features P a c k a g e name D e s c r ip t io n Symbol Material* DUAL I I P «ifi* IN LI NK PACKAGE P 2. 54m m I10UMIL) C SINGLE IN L I N E S I P 2.54mm P ÍJ 0 0 M Í L ) PACKAGE 2.54mm ZIG ZAG Z Standard 1 P IN L I N E

M208 B1

Abstract: fuji darlington module fuji transistor modules 1di50
Contextual Info: High Hf e Series Darlington Modules Ratings and Characteristics Type Single Darlington Modules 600V Dual Darlington Modules 600V Six Pack Darlington Modules 600V SIL Six Pack Darlington Modules 600V v CE0 sus IV) v CEX(sus) <V) (A) •c hFE (min) (A) VCE

SP78L05

Abstract: 33PF SP78L12 SP78LXX "3-Terminal Positive Voltage Regulator" 3-pin switching high voltage sot89-3
Contextual Info: SP78LXX Solved by TM 100mA 3-Terminal Positive Voltage Regulator SOT-8 Package Features g Output Current up to 100 mA g Fixed Output Voltage of 5V and 12V g Output Voltage Tolerances of f5% over the Full Temperature Range g Internal Short Circuit Current-Limiting

IRF7303

Abstract: RD-622 100U AN-994 RD622 i100u IRF7303 application
Contextual Info: PD - 9.1239B International UggìRectifier IRF7303 preliminary HEXFET Power M O S F E T • • • • • • • Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching

48v to 230v inverters circuit diagram

Abstract: i300n bi50l120 2SC 2625 transistor 7MBR10NF120 2RI100G-160X2PX3 EVK71-050 2SC2625 application note 24v dc to 230v ac inverter fuji transistor catalog
Contextual Info: Applications hiiiftH— j\\ Note: This catalog describes the m ain usages o f pow er transistors FUJI supplies these versatile elem ents fo r a w ide range of electronic equipm ent. Please contact FUJI fo r your particular application. 63 ; r - — I • Electronic ignitor use

1000VA

Abstract: 500VA
Contextual Info: TRS • M A IN FEAT UR ES Ÿ 2 Form C DPDT bifurcated-cross-bar contacts. Ÿ Gold Clad silver contact. Ÿ Dip-2C type matching 16pin IC socket. Ÿ Sealed type available. Ÿ UL recognized. • High sensitivity. • Coil Power Consumption : 0.15 ~ 0.51W ■ A PPL ICAT IONS

a7v TRANSISTOR

Abstract: t460 transistor 2DI100M-120 M210 T151 T930
Contextual Info: 2 D I 1 O O Y -? i s i s X ? y 9 _ M - 1 20 i o o a n .— )V : Outline Drawings POWER TRANSISTOR MODULE : Features • High Arm Short Circuit Capability • h F E ^ f i i' • 7 U —f • High DC Current Gain r ' i 1) — KF*Jj Including Free Wheeling Diode

Contextual Info: ANALOG DEVICES FEATURES Small Size: 4 Channels/Inch Low Power: 35mW AD204 High Accuracy: ±0.025% max Nonlinearity (K Grade) High CMR: 130dB (Gain = 100WV) Wide Bandwidth: 5kHz Full-Power (AD204) High CMV Isolation: ±2000V pk Continuous (K Grade) (Signal and Power)

AN-994

Abstract: IRF7306
Contextual Info: International IORRectifier P D -9.1241 B IRF7306 PRELIMINARY HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual P-Channel Mosfet • Surface Mount • Available in Tape & Reel • Dynamic dv/dt Rating • Fast Switching

ic 1200 p 60

Abstract: 1di50 1di200
Contextual Info: BIPOLAR TRANSISTOR MODULES Ratings and Specifications lO 600 volts class high hFE p o w e r tran sistor m odules for m o to r braking in in verter using • S u ite d f o r m o t o r b ra k in g in in v e r t e r u s in g h ig h hn p o w e r t r a n s i s t o r m o d u l e